US5734200A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polycide bonding pad structure
Assignee: United Microelectronics Corp
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Filing: 1997-01-28
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Granted: 1998-03-31
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Expires: 2017-01-28
Abstract
Abstract A bonding pad adapted for use with an Aluminum wire that resists stresses that would otherwise peel the pad from the substrate. The pad has a polysilicon layer adhered to an insulating layer on a semiconductor substrate, a overlying refractory metal polycide layer, a second polysilicon layer, a refractory metal layer, and a thick Aluminum alloy bonding pad.
Inventors
- 👤 Chen-Chiu Hsue
- 👤 Sun-Chieh Chien
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:14
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/90; H10W72/921; H10W72/922; H10W72/9226; H10W72/923; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W72/981; H10W72/983; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
169 words
An integrated circuit device including a bonding pad for attachment of external bonding means, the integrated circuit device comprising: a substrate provided with interconnected active and passive devices and having an overlying insulating layer; a bonding pad supported on said overlying insulating layer, the bonding pad comprising: a first polycrystalline silicon layer, a metal silicide layer on said first polycrystalline silicon layer, a second polycrystalline silicon layer on said metal silicide layer, and a dielectric layer over said overlying insulating layer and having an opening with edges, said edges of said opening in said dielectric layer extending between said first and second polycrystalline silicon layers, said metal silicide layer adhered to both said first and said second polycrystalline silicon layers within said opening in said dielectric layer so that said first polycrystalline silicon layer, said metal silicide layer and said second polycrystalline silicon layer form an interlocking structure around said edges of said opening in said dielectric layer; and a metal bonding pad layer on said metal barrier layer.
Claim 2
Dependent Claim
169 words
An integrated circuit device including a bonding pad for attachment of external bonding means, the integrated circuit device comprising: a substrate provided with interconnected active and passive devices and having an overlying insulating layer; a bonding pad supported on said overlying insulating layer, the bonding pad comprising: a first polycrystalline silicon layer, a metal silicide layer on said first polycrystalline silicon layer, a second polycrystalline silicon layer on said metal silicide layer, and a dielectric layer over said overlying insulating layer and having an opening with edges, said edges of said opening in said dielectric layer extending between said first and second polycrystalline silicon layers, said metal silicide layer adhered to both said first and said second polycrystalline silicon layers within said opening in said dielectric layer so that said first polycrystalline silicon layer, said metal silicide layer and said second polycrystalline silicon layer form an interlocking structure around said edges of said opening in said dielectric layer; and a metal bonding pad layer on said metal barrier layer.
Claim 3
Dependent Claim
19 words
The device of claim 1 wherein said bonding pad is attached to external bonding means comprising an aluminum wire.
Claim 4
Dependent Claim
17 words
The device of claim 2 wherein said aluminum wire is thermo compression bonded to said bonding pad.
Claim 5
Dependent Claim
21 words
The device of claim 1, said bonding pad further comprising an upper metal silicide layer on said second polycrystalline silicon layer.
Claim 6
Dependent Claim
20 words
The device of claim 4 wherein said metal silicide layer extends partially into said first and second polycrystalline silicon layers.
Claim 7
Dependent Claim
19 words
The device of claim 1, wherein said dielectric layer overlies peripheral top surface edges of said metal silicide layer.
Claim 8
Dependent Claim
28 words
The device of claim 6 wherein said overlying insulating layer is a field oxide layer formed of thermal SiO 2 that provides electrical isolation on a silicon substrate.
Claim 9
Dependent Claim
23 words
The device of claim 1 wherein said first polycrystalline silicon layer has a thickness in the range of about 500 to 2500 Angstroms.
Claim 10
Dependent Claim
26 words
The device of claim 8 wherein said metal silicide layer is tungsten silicide that has a thickness in the range of about 500 to 2500 Angstroms.
Claim 11
Dependent Claim
23 words
The device of claim 9 wherein said second polycrystalline silicon layer has a thickness in the range of about 800 to 2000 Angstroms.
Claim 12
Dependent Claim
12 words
The device of claim 10 wherein said metal barrier layer is titanium.
Claim 13
Dependent Claim
15 words
The device of claim 11 wherein said metal barrier layer is titanium nitride and titanium.
Claim 14
Dependent Claim
24 words
The device of claim 12 wherein said metal bonding pad layer has a composition including 0.5 to 2% silicon about 0.5% copper and aluminum.
Claim 15
Dependent Claim
23 words
The device of claim 13 wherein said metal bonding pad layer has a thickness in the range of about 8000 to 15000 Angstroms.
Claim 16
Dependent Claim
38 words
The device of claim 6 which further includes a second insulating layer over said dielectric layer, said second insulating layer extending over peripheral top surface edges of said second polycrystalline silicon layer and beneath said metal barrier layer.
Claim 17
Dependent Claim
20 words
The device of claim 15 wherein an upper metal silicide layer covers a surface of said second polycrystalline silicon layer.
Claim 18
Dependent Claim
34 words
The device of claim 15 which further includes a third insulating layer over said second insulating layer so that the third insulating layer overlies peripheral top surface edges of said metal bonding pad layer.
Claim 19
Dependent Claim
21 words
The device of claim 17 wherein said metal bonding pad layer overlies peripheral top surface edges of said second insulation layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-30 | 2001-09-29 | 2002-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-30 | 2005-09-29 | 2006-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-30 | 2009-09-29 | 2010-03-31 | $7700.00 | Window Closed / Lapsed |