US4600658A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallization means and method for high temperature applications
Assignee: Motorola Solutions Inc
•
Filing: 1984-09-20
•
Granted: 1986-07-15
•
Expires: 2004-09-20
Abstract
Abstract Semiconductor devices with resistor regions, capable of operating at higher temperatures, and having improved bond pull strength are obtained by using a single layer (e.g. Ni-Cr) to act as a combined resistive layer and barrier layer. When placed in the contact windows between the semiconductor (e.g. Si) and the interconnect metallization, (e.g. Al) the Ni-Cr layer acts as a diffusion barrier to prevent interdiffusion of silicon and aluminum and contact alloying punch-through. When placed elsewhere on the device the Ni-Cr layer also serves as thin film resistor material. Wire bond pull strength is improved by placing an adhesion layer (e.g. polysilicon) beneath the portion of the resistive barrier layer underlying the bonding pads. The polysilicon layer rests on the insulator (e.g. SiO2) covering the semiconductor substrate.
Inventors
- 👤 George F. Anderson
- 👤 Dan L. Burt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:08
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; H10D84/125; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/59; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12847
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
129 words
A bonding pad for attachment of external bonding means, comprising: a substrate of a material suitable for forming semiconductor devices; an insulating layer overlying said substrate for supporting said bonding pad; a polycrystalline silicon adhesion layer overlying and in contact with said insulating layer and of a material comprising an element in common with said insulating layer to promote chemical bonding thereto; bonding layer overlying said adhesion layer and of a material adapted to readily form bonds to said external bonding means; and a barrier layer intermediate between said bonding layer and said adhesion layer and of a material which forms intermetallic compounds with said adhesion layer to promote adhesion thereto and which prevents interdiffusion and alloying of said substrate material and said bonding layer material when interposed therebetween.
Claim 2
Dependent Claim
129 words
A bonding pad for attachment of external bonding means, comprising: a substrate of a material suitable for forming semiconductor devices; an insulating layer overlying said substrate for supporting said bonding pad; a polycrystalline silicon adhesion layer overlying and in contact with said insulating layer and of a material comprising an element in common with said insulating layer to promote chemical bonding thereto; bonding layer overlying said adhesion layer and of a material adapted to readily form bonds to said external bonding means; and a barrier layer intermediate between said bonding layer and said adhesion layer and of a material which forms intermetallic compounds with said adhesion layer to promote adhesion thereto and which prevents interdiffusion and alloying of said substrate material and said bonding layer material when interposed therebetween.
Claim 3
Dependent Claim
25 words
The bonding pad of claim 1 wherein said material of said barrier layer further has a sheet resistance in the range 8-40 ohms per square.
Claim 4
Dependent Claim
19 words
The bonding pad of claim 1 wherein said barrier layer comprises nickel and chromium, said bonding layer comprises aluminum.
Claim 5
Dependent Claim
138 words
An electronic device having a bonding pad suitable for attachment to an external bonding means, comprising: a bonding layer adapted to form bonds with said external bonding means; an intermediate layer underlying and in contact with said bonding layer; a polycrystalline silicon adhesion layer underlying and in contact with said intermediate layer; an insulating layer underlying and in contact with said adhesion layer; a semiconductor underlying said insulating layer; wherein said insulating layer and said adhesion layer have compositions comprising the same element to promote chemical bonding therebetween; wherein said intermediate layer is of a material suitable for use as barrier layer to prevent interdiffusion of said semiconductor and said bonding layer, and wherein said adhesion layer and said intermediate layer bond together with a tensile strength at least equal to the tensile strength of said bonding layer.
Claim 6
Dependent Claim
138 words
An electronic device having a bonding pad suitable for attachment to an external bonding means, comprising: a bonding layer adapted to form bonds with said external bonding means; an intermediate layer underlying and in contact with said bonding layer; a polycrystalline silicon adhesion layer underlying and in contact with said intermediate layer; an insulating layer underlying and in contact with said adhesion layer; a semiconductor underlying said insulating layer; wherein said insulating layer and said adhesion layer have compositions comprising the same element to promote chemical bonding therebetween; wherein said intermediate layer is of a material suitable for use as barrier layer to prevent interdiffusion of said semiconductor and said bonding layer, and wherein said adhesion layer and said intermediate layer bond together with a tensile strength at least equal to the tensile strength of said bonding layer.
Claim 7
Dependent Claim
21 words
The device of claim 4 wherein said intermediate layer is of a material which forms intermetallic compounds with said adhesion layer.
Claim 8
Dependent Claim
22 words
The device of claim 5 wherein said intermediate layer has a resistivity at least ten times the resistivity of said bonding layer.
Claim 9
Dependent Claim
18 words
The device of claim 4 wherein said intermediate layer comprises nickel and chromium, said bonding layer comprises aluminum.
References Cited (Backward Citations)
US3256587A
Cited
US3430104A
Cited
US3585461A
Cited
US3617818A
Cited
US3942187A
Cited
US3761309A
Cited
US3840398A
Cited
US3935635A
Cited
US4005455A
Cited
US4162506A
Cited
US4189524A
Cited
US4087314A
Cited
US4188636A
Cited
US4311768A
Cited
US4206472A
Cited
US4201999A
Cited
US4222165A
Cited
US4184933A
Cited
GB2073778A
Cited
US4431707A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-14 | 1990-01-13 | 1990-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-14 | 1994-01-13 | 1994-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-14 | 1998-01-13 | 1998-07-15 | $7700.00 | Window Closed / Lapsed |