High reliability semiconductive devices and integrated circuits

Abstract

Abstract A metallization process and structure for semiconductive devices and integrated circuits with a high degree of protection against impurities affecting device characteristics is provided having a first insulating layer, such as one of thermally grown silicon dioxide, formed on the device with openings where contacts are desired, a first metal layer forming contacts and interconnections between selected contacts of a metal such as aluminum, a second dielectric layer such as a glass layer with openings only over those portions of the previous metal layer in bonding pad areas, a second metal layer of a material, such as titanium, very tightly adherent to the glass dielectric deposited within and around the opening of the second insulating layer covered by a third metal layer preferably of gold with a gold lead wire bonded thereto or other means for external connection.

Inventors

• 👤 Robert T Eynon
• 👤 Richard Criswell Grace

Bibliographic Details