US3256587A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making vertically and horizontally integrated microcircuitry
Assignee: Solid State Products Inc
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Filing: 1962-03-23
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Granted: 1966-06-21
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Expires: 1982-03-23
Abstract
No abstract record available.
Inventors
- 👤 James B Hangstefer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:19
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/118
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
99 words
THE METHOD OF FABRICATING INTEGRATED MICROCIRCUITRY WHICH COMPRISES EXPOSING A HIGH-RESISTANCE MASS OF SILICON TO IMPULITY ELEMENTS AND TO AN OXIDIZING ATMOSPHERE AND FORMING AT LEAST ONE ASYMMETRICALLY-CONDUCTIVE DEVICE THEREIN HAVING DIFFERENT CONDUCTION REGIONS EXPOSED TO A VITREOUS INSULATING STRETUM ON THE MASS WITH DISCRETE OPENINGS THROUGH THE INSULATING STRATUM EACH COMMUNICATING WITH A DIFFERENT ONE OF THE REGIONS, APPLYING HIGH-RESISTIVITY METAL ATOP THE INSULATING STRUTUM AND FORMING AN ELECTRICALLY-CONDUCTIVE HIGH-RESISTANCE CONTINOUS COATING THEREWITH INTEGRALLY WITH THE INSULATING STRATUM AND IN ELECTRICALY CONNECTION WITH THE DIFFERENTCONDITION REGIONS BY WAY OF THE OPENINGS, APPLYING HIGH-CONDUCTIVITY METAL ATOP THE HIGH-RESISTIVITY METAL,
Claim 2
Independent Claim
99 words
THE METHOD OF FABRICATING INTEGRATED MICROCIRCUITRY WHICH COMPRISES EXPOSING A HIGH-RESISTANCE MASS OF SILICON TO IMPULITY ELEMENTS AND TO AN OXIDIZING ATMOSPHERE AND FORMING AT LEAST ONE ASYMMETRICALLY-CONDUCTIVE DEVICE THEREIN HAVING DIFFERENT CONDUCTION REGIONS EXPOSED TO A VITREOUS INSULATING STRETUM ON THE MASS WITH DISCRETE OPENINGS THROUGH THE INSULATING STRATUM EACH COMMUNICATING WITH A DIFFERENT ONE OF THE REGIONS, APPLYING HIGH-RESISTIVITY METAL ATOP THE INSULATING STRUTUM AND FORMING AN ELECTRICALLY-CONDUCTIVE HIGH-RESISTANCE CONTINOUS COATING THEREWITH INTEGRALLY WITH THE INSULATING STRATUM AND IN ELECTRICALY CONNECTION WITH THE DIFFERENTCONDITION REGIONS BY WAY OF THE OPENINGS, APPLYING HIGH-CONDUCTIVITY METAL ATOP THE HIGH-RESISTIVITY METAL,
References Cited (Backward Citations)
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US2986804A
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US2903627A
Cited
US3059320A
Cited
US2981877A
Cited
US3158788A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-06-20 | 1969-12-20 | 1970-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-06-20 | 1973-12-20 | 1974-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-06-20 | 1977-12-20 | 1978-06-21 | $7700.00 | Window Closed / Lapsed |