Two-phase continuous poly silicon gate CCD

Claim 1

The method of fabricating a two-phase charge coupled storage device comprising: growing a first layer of silicon dioxide on a substrate of silicon, said first layer having alternate thicker and thinner regions, depositing a substantially uniform layer of polysilicon over the surface of said first layer of silicon dioxide to define a peak over each said thicker region and a trough over each said thinner region, growing a substantially uniform second layer of silicon dioxide over said polysilicon layer, implanting ions substantially solely in the portions of said polysilicon layer which are at the peaks and troughs regions to render said portions of said polysilicon layer conductive relative to the regions therebetween. removing those portions of said second silicon dioxide layer which extend from an end portion of each peak down to and almost through the adjacent trough to present a plurality of windows to the polysilicon layer, depositing a conductive metal layer in each of said windows in contact with the polysilicon layer and extending over a portion of the second silicon dioxide layer adjacent each of said windows.

Claim 2

The method of fabricating a two-phase charge coupled storage device comprising: growing a first layer of silicon dioxide on a substrate of silicon, said first layer having alternate thicker and thinner regions, depositing a substantially uniform layer of polysilicon over the surface of said first layer of silicon dioxide to define a peak over each said thicker region and a trough over each said thinner region, growing a substantially uniform second layer of silicon dioxide over said polysilicon layer, implanting ions substantially solely in the portions of said polysilicon layer which are at the peaks and troughs regions to render said portions of said polysilicon layer conductive relative to the regions therebetween. removing those portions of said second silicon dioxide layer which extend from an end portion of each peak down to and almost through the adjacent trough to present a plurality of windows to the polysilicon layer, depositing a conductive metal layer in each of said windows in contact with the polysilicon layer and extending over a portion of the second silicon dioxide layer adjacent each of said windows.

Claim 3

The method of fabricating a two-phase charge coupled storage device comprising: forming a first layer of silicon dioxide on a substrate of silicon, said first layer having alternate thicker and thinner regions and steeply inclined regions joining the thicker and thinner regions, depositing a substantially uniform layer of polysilicon over the surface of said first layer of silicon dioxide to define a peak layer over each said thicker region and a trough layer over each said thinner region and a steeply inclined layer overlying each steeply inclined region and joining the peak and trough layers, forming a substantially uniform second layer of silicon dioxide over said polysilicon layer conforming to the peak, trough and steeply inclined areas, directing a stream of ions at the second silicon dioxide layer substantially perpendicular to the peaks and troughs to substantially penetrate only the portions of the second silicon dioxide layer overlying the peak and trough polysilicon layers to substantially ion implant only the peak and trough polysilicon layers with the steeply inclined polysilicon layers remaining relatively non-conductive relative to the ion implanted peak and trough layers, removing those portions of said second silicon dioxide layer which extend continuously over an end portion of each peak polysilicon layer down the adjacent steeply inclined polysilicon layer and to and partly through the adjacent trough polysilicon layer to present a plurality of windows through the second silicon dioxide layer to the polysilicon layer to expose the corresponding portions thereof, depositing a conductive metal layer in each of said windows in contact with and overlying the corresponding exposed portions of said polysilicon layer and extending over a portion of the second silicon dioxide layer adjacent each of said windows.

Claim 4

The method of fabricating a two-phase charge coupled storage device comprising: forming a first layer of silicon dioxide on a substrate of silicon, said first layer having alternate thicker and thinner regions and steeply inclined regions joining the thicker and thinner regions, depositing a substantially uniform layer of polysilicon over the surface of said first layer of silicon dioxide to define a peak layer over each said thicker region and a trough layer over each said thinner region and a steeply inclined layer overlying each steeply inclined region and joining the peak and trough layers, forming a substantially uniform second layer of silicon dioxide over said polysilicon layer conforming to the peak, trough and steeply inclined areas, directing a stream of ions at the second silicon dioxide layer substantially perpendicular to the peaks and troughs to substantially penetrate only the portions of the second silicon dioxide layer overlying the peak and trough polysilicon layers to substantially ion implant only the peak and trough polysilicon layers with the steeply inclined polysilicon layers remaining relatively non-conductive relative to the ion implanted peak and trough layers, removing those portions of said second silicon dioxide layer which extend continuously over an end portion of each peak polysilicon layer down the adjacent steeply inclined polysilicon layer and to and partly through the adjacent trough polysilicon layer to present a plurality of windows through the second silicon dioxide layer to the polysilicon layer to expose the corresponding portions thereof, depositing a conductive metal layer in each of said windows in contact with and overlying the corresponding exposed portions of said polysilicon layer and extending over a portion of the second silicon dioxide layer adjacent each of said windows.

Claim 5

The method comprising the steps of: forming a unitary body of a single semiconductor material, said body having a plurality of low conductivity elevated surface regions each joined by a low conductivity steeply inclined intermediate surface region to a successive low conductivity depressed surface region, all of the elevated and depressed surface regions being substantially aligned with each other, forming a substantially uniform thickness layer of a second material over the body of semiconductor material conforming to the elevated and depressed and intermediate surface regions, directing a stream of ions at the layer of second material substantially perpendicular to the alignment of the low conductivity elevated and depressed regions to substantially penetrate through only the portions of the layer of second material overlying the elevated and depressed regions of the semiconductor body to simultaneously substantially ion implant and render relatively conductive only said elevated and depressed regions of the semiconductor body, the stream of ions being substantially absorbed in the portions of the layer of second material overlying the low conductivity steeply inclined intermediate regions so as to substantially fail to penetrate therethrough to the steeply inclined low conductivity intermediate regions of the semiconductory body, whereby the successive elevated and depressed regions of the semiconductor body are simultaneously rendered relatively conductive with respect to the low conductivity steeply inclined intermediate regions.

Claim 6

The method comprising the steps of: forming a unitary body of a single semiconductor material, said body having a plurality of low conductivity elevated surface regions each joined by a low conductivity steeply inclined intermediate surface region to a successive low conductivity depressed surface region, all of the elevated and depressed surface regions being substantially aligned with each other, forming a substantially uniform thickness layer of a second material over the body of semiconductor material conforming to the elevated and depressed and intermediate surface regions, directing a stream of ions at the layer of second material substantially perpendicular to the alignment of the low conductivity elevated and depressed regions to substantially penetrate through only the portions of the layer of second material overlying the elevated and depressed regions of the semiconductor body to simultaneously substantially ion implant and render relatively conductive only said elevated and depressed regions of the semiconductor body, the stream of ions being substantially absorbed in the portions of the layer of second material overlying the low conductivity steeply inclined intermediate regions so as to substantially fail to penetrate therethrough to the steeply inclined low conductivity intermediate regions of the semiconductory body, whereby the successive elevated and depressed regions of the semiconductor body are simultaneously rendered relatively conductive with respect to the low conductivity steeply inclined intermediate regions.