US5708559A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Precision analog metal-metal capacitor
Assignee: GlobalFoundries Inc
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Filing: 1995-10-27
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Granted: 1998-01-13
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Expires: 2015-10-27
Abstract
Abstract A precision analog metal-metal capacitor is fabricated by forming a first capacitor plate in an insulation layer by forming a trench therein, depositing metal within the trench and planarizing the device. A thin dielectric layer is then deposited and patterned over the first capacitor plate. A second insulator is then deposited over the device and discrete openings etched therein to expose the insulation layer and first metal plate. Metal is deposited within the openings and planarized, thereby forming a contact to the first metal plate and the second metal plate of the capacitor.
Inventors
- 👤 Terry J. Brabazon
- 👤 Badih El-Kareh
- 👤 Stuart R. Martin
- 👤 Matthew J. Rutten
- 👤 Carter W. Kaanta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:47
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
112 words
A capacitor within a single insulation layer of a semiconductor device comprising: a first insulation layer having a contact pad and a metallization level; a second insulation layer overlying the first insulation layer and having a filled aperture therein over said contact pad, said aperture being defined by an interior perimeter; a first metal layer within said aperture, adjacent the perimeter of said aperture; a dielectric layer over said first metal layer within said aperture; a second metal layer within said aperture and over said dielectric layer, wherein said first metal layer, said dielectric layer and said second metal layer fill said aperture and form a capacitor within said second insulation layer.
Claim 2
Dependent Claim
112 words
A capacitor within a single insulation layer of a semiconductor device comprising: a first insulation layer having a contact pad and a metallization level; a second insulation layer overlying the first insulation layer and having a filled aperture therein over said contact pad, said aperture being defined by an interior perimeter; a first metal layer within said aperture, adjacent the perimeter of said aperture; a dielectric layer over said first metal layer within said aperture; a second metal layer within said aperture and over said dielectric layer, wherein said first metal layer, said dielectric layer and said second metal layer fill said aperture and form a capacitor within said second insulation layer.
Claim 3
Dependent Claim
44 words
The capacitor of claim 1 further comprising: a third insulation layer over said second insulation layer and said capacitor; discrete first and second metal studs extending through said second insulation layer in electrical contact with said first metal layer and said second metal layer.
Claim 4
Dependent Claim
32 words
A capacitor of claim 1 wherein said metallization level is proximate to said contact pad and a metal stud extends through said second insulation layer in electrical contact with said metallization layer.
Claim 5
Dependent Claim
76 words
A capacitor in a semiconductor device comprising: a first insulation layer over a semiconductor device, said first insulation layer having a planarized first metal layer positioned therein; a dielectric layer over a portion of said first metal layer; a second insulation layer over said first insulation layer, said first metal layer and said dielectric layer; and a second planarized metal layer wherein said second metal layer extends through said second insulation layer over said dielectric layer.
Claim 6
Dependent Claim
76 words
A capacitor in a semiconductor device comprising: a first insulation layer over a semiconductor device, said first insulation layer having a planarized first metal layer positioned therein; a dielectric layer over a portion of said first metal layer; a second insulation layer over said first insulation layer, said first metal layer and said dielectric layer; and a second planarized metal layer wherein said second metal layer extends through said second insulation layer over said dielectric layer.
Claim 7
Dependent Claim
36 words
The capacitor of claim 4 further comprising a metallization level within said first insulation layer proximate said first metal layer and a discrete metal stud extending through said second insulation layer electrically contacting said metallization layer.
Claim 8
Dependent Claim
41 words
The capacitor of claim 4 further comprising: a metallization level within said first insulation layer proximate said first metal layer; and a metal stud and lead within said second insulation layer electrically connecting said second metal layer and said metallization level.
Claim 9
Dependent Claim
110 words
A capacitor in a semiconductor device, comprising: a semiconductor substrate; a planarized first insulation layer over said semiconductor substrate; a first metallization level over said first insulation layer; a second insulation layer positioned over said first insulation layer and said first metallization level, wherein the second insulation layer has a filled trench defined by an interior and wherein said filled trench comprises a dielectric layer positioned adjacent the interior of said trench and a planarized metal plate over said dielectric layer; a metal stud extending through said second insulation layer wherein said stud contacts said first metallization level; a second metallization layer over and in contact with said metal plate.
Claim 10
Dependent Claim
110 words
A capacitor in a semiconductor device, comprising: a semiconductor substrate; a planarized first insulation layer over said semiconductor substrate; a first metallization level over said first insulation layer; a second insulation layer positioned over said first insulation layer and said first metallization level, wherein the second insulation layer has a filled trench defined by an interior and wherein said filled trench comprises a dielectric layer positioned adjacent the interior of said trench and a planarized metal plate over said dielectric layer; a metal stud extending through said second insulation layer wherein said stud contacts said first metallization level; a second metallization layer over and in contact with said metal plate.
Claim 11
Dependent Claim
33 words
The capacitor of claim 7 further comprising a third insulation layer over said second metallization layer, metal stud, dielectric layer and metal contact; and a third metallization layer over said third insulation layer.
Claim 12
Dependent Claim
21 words
The capacitor of claim 7 further comprising a third metallization layer under said first insulation layer and over said semiconductor substrate.
Claim 13
Dependent Claim
139 words
A capacitor in a semiconductor device comprising: a first planarized insulation layer over a semiconductor device and a patterned first metal layer positioned thereover; a dielectric layer over at least a portion of said first metal layer; a second metal layer having discrete first and second portions, wherein a first portion of said second metal layer is fully landed over said dielectric layer and said second portion of said second metal layer is in contact with said first metal layer; a second insulation layer over said first insulation layer, said dielectric layer and said second metal layer; discrete first and second metal studs extending through said second insulation layer wherein said first metal stud is over said first portion of said second metal layer and the second metal stud is over the second portion of said second metal layer.
Claim 14
Dependent Claim
139 words
A capacitor in a semiconductor device comprising: a first planarized insulation layer over a semiconductor device and a patterned first metal layer positioned thereover; a dielectric layer over at least a portion of said first metal layer; a second metal layer having discrete first and second portions, wherein a first portion of said second metal layer is fully landed over said dielectric layer and said second portion of said second metal layer is in contact with said first metal layer; a second insulation layer over said first insulation layer, said dielectric layer and said second metal layer; discrete first and second metal studs extending through said second insulation layer wherein said first metal stud is over said first portion of said second metal layer and the second metal stud is over the second portion of said second metal layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-12 | 2001-07-14 | 2002-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-12 | 2005-07-14 | 2006-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-12 | 2009-07-14 | 2010-01-13 | $7700.00 | Window Closed / Lapsed |