Semiconductor device

Claim 2

A semiconductor bipolar memory device comprising: a first semiconductor layer; and a first electrode, a dielectric film and a second electrode comprised of metal silicide formed on said first semiconductor layer with said second electrode being adjacent to said first semiconductor layer, said dielectric film being formed on said second electrode and said first electrode being formed on said dielectric film so that said first semiconductor layer and said second electrode from a Schottky barrier diode and said first electrode, said dielectric film and said second electrode from a capacitor on said diode, wherein a metal film is interposed between said second electrode and said dielectric film.

Claim 3

A semiconductor device according to claim 1, wherein said second electrode is comprised of a single layer of metal silicide.

Claim 4

A semiconductor device according to claim 1, wherein said second electrode is comprised of a film of stacked layers of metal silicides.

Claim 5

A semiconductor device according to claim 2, wherein said metal silicide is selected from the group consisting of palladium silicide, platinum silicide, tantalum silicide, tungsten silicide, molybdenum silicide, titantium silicide and hafnium silicide.

Claim 6

A semiconductor device according to claim 3, wherein said metal silicides are selected from the group consisting of palladium silicide, platinum silicide, tantalum silicide, tungsten silicide, molybdenum silicide, titanium silicide and hafnium silicide.

Claim 7

A semiconductor device according to claim 1, wherein said dielectric film is comprised of tantalum oxide.

Claim 8

A semiconductor device according to claim 1, wherein said dielectric film comprises a single layer selected from a group consisting of tantalum oxide, niobium oxide, titanium oxide, hafnium oxide, aluminum oxide, silicon dioxide and silicon nitride.

Claim 9

A semiconductor device according to claim 1, wherein said dielectric film is comprised of a film of stacked layers of different materials which layers are selected from a group consisting of tantalum oxide, niobium oxide, titanium oxide, hafnium oxide, aluminum oxide, silicon dioxide and silicon nitride.

Claim 10

A semiconductor device according to claim 1, wherein said dielectric film is a film formed by oxidizing a surface of said second electrode.

Claim 11

A semiconductor device according to claim 9, wherein said dielectric film is an oxide film of a transition metal.

Claim 12

A semiconductor device according to claim 1, wherein said dielectric film is a film of an oxide of a transition metal.

Claim 13

A semiconductor device according to claim 11, wherein the metal silicide is at least one member selected from a group consisting of platinum silicide, palladium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, titanium silicide and hafnium silicide.

Claim 14

A semiconductor device according to claim 1, wherein said metal film is made of member selected from a group consisting of tantalum, niobium, titanium, hafnium and zirconium.

Claim 15

A semiconductor device according to claim 1, further comprising a third electrode formed of high conductivity material located under said first semiconductor layer and coupled to said first electrode through a high conductivity connection.

Claim 16

A semiconductor device according to claim 14, wherein said first semiconductor layer is of a first conductivity type and said third electrode is formed of a semiconductor material of said first semiconductor type having a higher impurity concentration than said first semiconductor layer.

Claim 17

A semiconductor device according to claim 15, wherein said first semiconductor layer has a thickness of less than 1 μm.

Claim 18

A semiconductor device according to claim 14, wherein said third electrode is comprised of a metal or a metal silicide.

Claim 19

A semiconductor device according to claim 17, wherein said first semiconductor layer has a thickness of less than 1 μm.

Claim 20

A semiconductor device according to claim 1, wherein said first electrode is comprised of aluminum.

Claim 21

A semiconductor device according to claim 1, wherein said first electrode is comprised of a refractory metal.

Claim 22

A semiconductor memory device comprising: a semiconductor substrate having a first conductivity type; and an assembly formed on said first semiconductor substrate comprising a first electrode, a dielectric film, a second electrode comprised of metal silicide, a first semiconductor layer of a second conductivity type opposite to said first conductivity type and a third electrodes arranged so that said third electrode is adjacent to said substrate, said first semiconductor layer is formed on said third electrode, said second electrode is formed on said first semiconductor layer, said dielectric film is formed on said second electrode and said first electrode is formed on said dielectric film with said first electrode being coupled to said third electrode through a high conductivity connection region which extends through said first semiconductor layer, wherein said first semiconductor layer and said second electrode form a Schottky barrier diode and said first electrode, said dielectric film and said second electrode form a capacitor on said diode, wherein a metal film is interposed between said second electrode and said dielectric film.

Claim 23

A semiconductor memory device comprising: a semiconductor substrate having a first conductivity type; and an assembly formed on said first semiconductor substrate comprising a first electrode, a dielectric film, a second electrode comprised of metal silicide, a first semiconductor layer of a second conductivity type opposite to said first conductivity type and a third electrodes arranged so that said third electrode is adjacent to said substrate, said first semiconductor layer is formed on said third electrode, said second electrode is formed on said first semiconductor layer, said dielectric film is formed on said second electrode and said first electrode is formed on said dielectric film with said first electrode being coupled to said third electrode through a high conductivity connection region which extends through said first semiconductor layer, wherein said first semiconductor layer and said second electrode form a Schottky barrier diode and said first electrode, said dielectric film and said second electrode form a capacitor on said diode, wherein a metal film is interposed between said second electrode and said dielectric film.

Claim 24

A semiconductor device according to claim 21, wherein said dielectric film is comprised of an oxide film of a transition metal.

Claim 25

A semiconductor device according to claim 21, wherein said third electrode is comprised of a high conductivity semiconductor material having said second conductivity with a higher impurity concentration than said first semiconductor layer.

Claim 26

A semiconductor device according to claim 21, wherein said third layer is comprised of a metal or a metal silicide.