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EP0255911A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Metal-dielectric-metal layer structure with low resistance via connections

Assignee: International Business Machines Corp
•
Filing: 1987-07-28
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Granted: —
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Expires: 2007-07-28
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Abstract

Abstract A structure is provided suitable for electronic packaging and for integrated microelectronic circuits wherein a discontinuous interface layer (26) is used to insure good electrical conductivity between two metallic layers (M1,M2), while at the same time enhancing adhesion between one of the metallic layers and a dielectric layer (12). In particular, a discontinuous Cr layer (26) deposited onto a substrate comprising a first polyimide portion (12) and a second Cu (18) portion will ensure good adhesion between a copper layer (22) and the polyimide, while still maintaining low electrical resistance in the copper-copper electrical contact region (14).

Inventors

  • 👤 Paul Siu-Chung Ho
  • 👤 Haralambos Lefakis
  • 👤 David Anthony Smith
  • 👤 King-Ning Tu

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 13:14
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/041; H05; H05K; H05K3/00; H05K3/38; H05K3/388; H10W20/033; H10W20/40; H10W20/41; H10W20/42; H10W20/425

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 59 words
A metal-dielectric-metal structure with an interface layer between at least one metal layer and the dielectric, the interface layer extending into a contact area of the metal layers (18,22) in a via hole of the dieelectric (12), characterized in that the interface layer (26) is laterally discontinuous in the contact area of the metal layers in the via hole.
Claim 2
Dependent Claim 59 words
A metal-dielectric-metal structure with an interface layer between at least one metal layer and the dielectric, the interface layer extending into a contact area of the metal layers (18,22) in a via hole of the dieelectric (12), characterized in that the interface layer (26) is laterally discontinuous in the contact area of the metal layers in the via hole.
Claim 3
Dependent Claim 29 words
The structure of claim 1, wherein approximately 10-95 % of the metal layer exposed in the contact area of the via hole are covered by the discontinuous interface layer.
Claim 4
Dependent Claim 24 words
The structure of one of the preceeding claims, wherein the interface layer is laterally continuous between at least one metal layer and the dielectric.
Claim 5
Dependent Claim 32 words
The structure of one or more of the preceeding claims, wherein the composition of the metal layers comprises at least one of the metals Cu, Al, Au, Pd, Pt, Ni, Cr, Ti.
Claim 6
Dependent Claim 36 words
The structure of one or more of the preceeding claims, wherein the composition of the at least one interface layer comprises at least one of the metals Cr, Ti, Al, Ni, Va, Ta, Nb, Zr, Mo.
Claim 7
Dependent Claim 35 words
The structure of one or more of the preceeding claims, wherein the composition of the at least one dielectric layer includes polymers such as polyimide, plastics such as epoxy, insulators such as SiO₂, glass, ceramics.
Claim 8
Dependent Claim 22 words
Use of the metal-dielectric-metal layer structure in accordance with one or more of the preceeding claims in a multilayer integrated circuit structure.

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