Patent US5699292A successfully refreshed from Google Patents.
US5699292A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SRAM cell employing substantially vertically elongated pull-up resistors
Assignee: Micron Technology Inc
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Filing: 1996-08-29
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Granted: 1997-12-16
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Expires: 2016-08-29
Abstract
Abstract An SRAM cell having at least four field effect transistors includes, a) at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and b) the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates. In an additional aspect, an SRAM cell having at least four field effect transistors includes, i) at least four transistor gates, an electrical interconnect line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and ii) the Vcc line and the electrical interconnect line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates.
Inventors
- 👤 Ceredig Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:34
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/15; Y; Y10; Y10S; Y10S257/00; Y10S257/903; Y10S257/904
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
95 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes with the Vcc line being provided everywhere elevationally outward of the ground line throughout the cell, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates.
Claim 2
Dependent Claim
95 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes with the Vcc line being provided everywhere elevationally outward of the ground line throughout the cell, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates.
Claim 3
Dependent Claim
16 words
The SRAM cell of claim 1 wherein the Vcc line and the ground line elevationally overlap.
Claim 4
Dependent Claim
29 words
The SRAM cell of claim 1 wherein the Vcc line and the ground line have a common substantial shape in elongation and substantially elevationally overlap everywhere throughout the cell.
Claim 5
Dependent Claim
117 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates; and the Vcc line having outer lateral edges in locations where it connects with the respective pull-up resistors, the substantially vertically elongated pull-up resistors being received substantially outward of the Vcc line outer lateral edges and ohmically connecting therewith.
Claim 6
Dependent Claim
117 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates; and the Vcc line having outer lateral edges in locations where it connects with the respective pull-up resistors, the substantially vertically elongated pull-up resistors being received substantially outward of the Vcc line outer lateral edges and ohmically connecting therewith.
Claim 7
Dependent Claim
14 words
The SRAM cell of claim 1 having only one Vcc line in the cell.
Claim 8
Dependent Claim
116 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates; and the Vcc line and the ground line having a common substantial shape in elongation and substantially elevationally overlapping throughout the cell, and the Vcc line being provided everywhere elevationally outward of the ground line throughout the cell.
Claim 9
Dependent Claim
116 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates; and the Vcc line and the ground line having a common substantial shape in elongation and substantially elevationally overlapping throughout the cell, and the Vcc line being provided everywhere elevationally outward of the ground line throughout the cell.
Claim 10
Dependent Claim
165 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates; and only one Vcc line being in the cell, the Vcc line and the ground line having a common substantial shape in elongation and substantially elevationally overlapping throughout the cell, the one Vcc line being provided everywhere elevationally outward of the ground line throughout the cell, and the one Vcc line having outer lateral edges in locations where it connects with the respective pull-up resistors, the substantially vertically elongated pull-up resistors being received substantially outward of the one Vcc line outer lateral edges and ohmically connecting therewith.
Claim 11
Dependent Claim
165 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates; and only one Vcc line being in the cell, the Vcc line and the ground line having a common substantial shape in elongation and substantially elevationally overlapping throughout the cell, the one Vcc line being provided everywhere elevationally outward of the ground line throughout the cell, and the one Vcc line having outer lateral edges in locations where it connects with the respective pull-up resistors, the substantially vertically elongated pull-up resistors being received substantially outward of the one Vcc line outer lateral edges and ohmically connecting therewith.
Claim 12
Dependent Claim
79 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates.
Claim 13
Dependent Claim
79 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates.
Claim 14
Dependent Claim
16 words
The SRAM cell of claim 8 wherein the Vcc line and the ground line elevationally overlap.
Claim 15
Dependent Claim
28 words
The SRAM cell of claim 8 wherein the Vcc line and the ground line have a common substantial shape in elongation and substantially elevationally overlap throughout the cell.
Claim 16
Dependent Claim
14 words
The SRAM cell of claim 8 having only one Vcc line in the cell.
Claim 17
Dependent Claim
93 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors being directly over the selected of the respective transistor diffusion regions.
Claim 18
Dependent Claim
93 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors being directly over the selected of the respective transistor diffusion regions.
Claim 19
Dependent Claim
103 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors extending within an opening in an insulative layer, and the pull-up resistors not completely filling the opening in the insulative layer.
Claim 20
Dependent Claim
103 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors extending within an opening in an insulative layer, and the pull-up resistors not completely filling the opening in the insulative layer.
Claim 21
Dependent Claim
97 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors extending within an opening in an insulative layer, the pull-up resistors comprising back-to-back diode constructions.
Claim 22
Dependent Claim
97 words
An SRAM cell having at least four field effect transistors, the SRAM cell comprising: at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and the Vcc line and the ground line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors extending within an opening in an insulative layer, the pull-up resistors comprising back-to-back diode constructions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-15 | 2001-06-16 | 2001-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-15 | 2005-06-16 | 2005-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-15 | 2009-06-16 | 2009-12-16 | $7700.00 | Window Closed / Lapsed |