US4828629A
Expired / Lapsed
US
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Process of fabricating silicon oxide and gettering films on polycrystalline silicon resistance element
Assignee: Hitachi Ltd
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Filing: 1986-03-20
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Granted: 1989-05-09
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Expires: 2006-03-20
Abstract
Abstract Multi-layer film including a silicon oxide film formed by the CVD method and a film having a gettering function is used as a layer insulation film in a semiconductor device having a resistance constituted by polycrystalline silicon, so that an impurity is not introduced into a resistance element formed in the (intrinsic) polycrystalline silicon, which is thereby stabilized, resulting in an improved characteristic of the semiconductor device. A third layer, of Spin on Glass, can be formed on the film having a gettering function so as to improve the flatness of the layer insulation film.
Inventors
- 👤 Shuji Ikeda
- 👤 Satoshi Meguro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D1/00; H10D1/40; H10D1/47; H10B; H10B10/00; H10B10/15; H10D84/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6342; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P32/00; H10P32/30; H10P32/302; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S257/00; Y10S257/903; Y10S257/904
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
86 words
Process of fabricating a semiconductor device having at least one element constituted by polycrystalline silicon, the polycrystalline silicon having portions which have been doped with an impurity and portions which are substantially undoped, said process comprising the steps of forming a silicon oxide film on said polycrystalline silicon, which polycrystalline silicon has portions that have been doped with an impurity and portions that are substantially undoped, said silicon oxide film being formed by the CVD method, and forming a gettering film on said silicon oxide film.
Claim 2
Dependent Claim
86 words
Process of fabricating a semiconductor device having at least one element constituted by polycrystalline silicon, the polycrystalline silicon having portions which have been doped with an impurity and portions which are substantially undoped, said process comprising the steps of forming a silicon oxide film on said polycrystalline silicon, which polycrystalline silicon has portions that have been doped with an impurity and portions that are substantially undoped, said silicon oxide film being formed by the CVD method, and forming a gettering film on said silicon oxide film.
Claim 3
Dependent Claim
17 words
Process according to claim 1, wherein said at least one element is at least one resistance element.
Claim 4
Dependent Claim
17 words
Process according to claim 1, wherein the substantially undoped portions of the polycrystalline silicon are intrinsic portions.
Claim 5
Dependent Claim
36 words
Process according to claim 1, wherein the CVD method is performed at a sufficiently low temperature such that said impurity does not diffuse from the doped portions of the polycrystalline silicon into the substantially undoped portions.
Claim 6
Dependent Claim
31 words
Process according to claim 1, wherein said at least one element is at least one resistance element, the portions of the polycrystalline silicon that are substantially undoped constituting the resistance elements.
Claim 7
Dependent Claim
36 words
Process according to claim 5, wherein the CVD method is performed at a sufficiently low temperature such that said impurity does not diffuse from the doped portions of the polycrystalline silicon into the substantially undoped portions.
Claim 8
Dependent Claim
28 words
Process according to claim 1, wherein said silicon oxide film is formed by the CVD method at a temperature of 650°-750° C. and a pressure of 0.1-10 Torr.
Claim 9
Dependent Claim
13 words
Process according to claim 1, wherein said gettering film is a PSG film.
Claim 10
Dependent Claim
13 words
Process according to claim 1, wherein said gettering film is a BSG film.
Claim 11
Dependent Claim
25 words
Process according to claim 1, wherein said silicon oxide film is formed directly on the polycrystalline silicon, on the portions thereof that are substantially undoped.
Claim 12
Dependent Claim
10 words
A product produced by the process according to claim 1.
Claim 13
Dependent Claim
91 words
Process of fabricating a semiconductor device having at least one element constituted by polycrystalline silicon which has portions that have been doped with an impurity and portions that are substantially undoped, said process comprising the steps of forming a silicon oxide film on said polycrystalline silicon, which polycrystalline silicon has portions that have been doped with an impurity and portions that are substantially undoped, said silicon oxide film being formed by the CVD method, forming a gettering film on said silicon film, and forming a SOG film on said gettering film.
Claim 14
Dependent Claim
91 words
Process of fabricating a semiconductor device having at least one element constituted by polycrystalline silicon which has portions that have been doped with an impurity and portions that are substantially undoped, said process comprising the steps of forming a silicon oxide film on said polycrystalline silicon, which polycrystalline silicon has portions that have been doped with an impurity and portions that are substantially undoped, said silicon oxide film being formed by the CVD method, forming a gettering film on said silicon film, and forming a SOG film on said gettering film.
Claim 15
Dependent Claim
35 words
Process according to claim 12, wherein the SOG film is formed so as to provide a flatter surface than the surface of the gettering film after forming the gettering film on the silicon oxide film.
Claim 16
Dependent Claim
18 words
Process according to claim 13, comprising the further step of forming a wiring layer on the SOG film.
Claim 17
Dependent Claim
18 words
Process according to claim 12, comprising the further step of forming a wiring layer on the SOG film.
Claim 18
Dependent Claim
13 words
Process according to claim 12, wherein said gettering film is a PSG film.
Claim 19
Dependent Claim
13 words
Process according to claim 12, wherein said gettering film is a BSG film.
Claim 20
Dependent Claim
17 words
Process according to claim 12, wherein said at least one element is at least one resistance element.
Claim 21
Dependent Claim
17 words
Process according to claim 12, wherein the substantially undoped portions of the polycrystalline silicon are intrinsic portions.
Claim 22
Dependent Claim
36 words
Process according to claim, 12 wherein the CVD method is performed at a sufficiently low temperature such that said impurity does not diffuse from the doped portions of the polycrystalline silicon into the substantially undoped portions.
Claim 23
Dependent Claim
31 words
Process according to claim 12, wherein said at least one element is at least one resistance element, the portions of the polycrystalline silicon that are substantially undoped constituting the resistance elements.
Claim 24
Dependent Claim
36 words
Process according to claim 21, wherein the CVD method is performed at a sufficiently low temperature such that said impurity does not diffuse from the doped portions of the polycrystalline silicon into the substantially undoped portions.
Claim 25
Dependent Claim
13 words
Process according to claim 12, wherein said gettering film is a PSG film.
Claim 26
Dependent Claim
13 words
Process accoring to claim 12, wherein said gettering film is a BSG film.
Claim 27
Dependent Claim
10 words
A product produced by the process according to claim 12.
Claim 28
Dependent Claim
110 words
Process of fabricating a semiconductor device having at least one element constituted by polycrystalline silicon which has portions that have been doped with an impurity and portions that are substantially undoped, said process comprising: the step of forming a silicon oxide film on said polycrystalline silicon, which polycrystalline silicon has portions that have been doped with an impurity and portions that are substantially undoped, the silicon oxide film being formed by the CVD method, at a temperature of 650°-750° C. and a pressure of 0.1-10 Torr. the step of forming a gettering film on said silicon oxide film; and the step of forming a SOG film on said gettering film.
Claim 29
Dependent Claim
110 words
Process of fabricating a semiconductor device having at least one element constituted by polycrystalline silicon which has portions that have been doped with an impurity and portions that are substantially undoped, said process comprising: the step of forming a silicon oxide film on said polycrystalline silicon, which polycrystalline silicon has portions that have been doped with an impurity and portions that are substantially undoped, the silicon oxide film being formed by the CVD method, at a temperature of 650°-750° C. and a pressure of 0.1-10 Torr. the step of forming a gettering film on said silicon oxide film; and the step of forming a SOG film on said gettering film.
Claim 30
Dependent Claim
35 words
Process according to claim 26, wherein the SOG film is formed so as to provide a flatter surface than the surface of the gettering film after forming the gettering film on the silicon oxide film.
Claim 31
Dependent Claim
18 words
Process according to claim 27, comprising the further step of forming a wiring layer on the SOG film.
Claim 32
Dependent Claim
18 words
Process according to claim 26, comprising the further step of forming a wiring layer on the SOG film.
Claim 33
Dependent Claim
13 words
Process according to claim 26, wherein said gettering film is a PSG film.
Claim 34
Dependent Claim
13 words
Process according to claim 26, wherein said gettering film is a BSG film.
Claim 35
Dependent Claim
10 words
A product produced by the process according to claim 26.
Claim 36
Dependent Claim
63 words
Process of fabricating a semiconductor device having at least one element constituted by polycrystalline silicon, the polycrystalline silicon having portions which have been doped with an impurity and portions which are substantially undoped, said process comprising the steps of forming a silicon oxide film on said polycrystalline silicon by the CVD method, and forming a gettering film directly on the silicon oxide film.
Claim 37
Dependent Claim
63 words
Process of fabricating a semiconductor device having at least one element constituted by polycrystalline silicon, the polycrystalline silicon having portions which have been doped with an impurity and portions which are substantially undoped, said process comprising the steps of forming a silicon oxide film on said polycrystalline silicon by the CVD method, and forming a gettering film directly on the silicon oxide film.
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| 3.5 Years (Year 4) | 1992-05-08 | 1992-11-07 | 1993-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-08 | 1996-11-07 | 1997-05-09 | $3760.00 | Window Closed / Lapsed |
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