US5679982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Barrier against metal diffusion
Assignee: Intel Corp
•
Filing: 1996-08-13
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Granted: 1997-10-21
•
Expires: 2016-08-13
Abstract
Abstract A method of forming a barrier layer for preventing the diffusion of a metal interconnect through an interlayer dielectric of an integrated circuit and to act as an etch stop. A thin metal layer is formed on the interlayer dielectric and then oxidized to form a metal-oxide barrier layer.
Inventors
- 👤 Donald S. Gardner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4432; H10W20/4437; H10W20/4441; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
70 words
A high performance and reliable interconnect structure for a multilevel integrated circuit formed on a substrate comprising: an interlayer dielectric formed above said substrate; a titanium-oxide barrier layer formed on said and in contact with interlayer dielectric; and a metal interconnect formed on and in contact with said titanium-oxide barrier layer on said interlayer dielectric wherein said interlayer dielectric and said titanium oxide barrier layer electrically isolate said metal interconnect.
Claim 2
Dependent Claim
70 words
A high performance and reliable interconnect structure for a multilevel integrated circuit formed on a substrate comprising: an interlayer dielectric formed above said substrate; a titanium-oxide barrier layer formed on said and in contact with interlayer dielectric; and a metal interconnect formed on and in contact with said titanium-oxide barrier layer on said interlayer dielectric wherein said interlayer dielectric and said titanium oxide barrier layer electrically isolate said metal interconnect.
Claim 3
Dependent Claim
21 words
The interconnect structure of claim 1 further comprising a metal contact formed through said interlayer dielectric and said titanium oxide barrier.
Claim 4
Dependent Claim
23 words
The interconnect of claim 1 further comprising a metal-oxide barrier layer formed on top of and on the sides of said metal interconnect.
Claim 5
Dependent Claim
14 words
The interconnect structure of claim 3 wherein said metal-oxide barrier layer comprises an aluminum-oxide.
Claim 6
Dependent Claim
14 words
The interconnect structure of claim 3 wherein said metal-oxide barrier layer comprises a titanium-oxide.
Claim 7
Dependent Claim
22 words
The interconnect structure of claim 1 wherein said metal interconnect is selected from the group consisting of gold, silver, copper, and tungsten.
Claim 8
Dependent Claim
13 words
The interconnect structure of claim 1 wherein said interlayer dielectric comprises silicon dioxide.
Claim 9
Dependent Claim
12 words
The interconnect structure of claim 2 wherein said metal contact comprises tungsten.
Claim 10
Dependent Claim
21 words
The interconnect structure of claim 1 wherein said titanium oxide barrier layer is formed to a thickness of between 50-1000 Å.
Claim 11
Dependent Claim
73 words
A high performance and reliable interconnect structure for an integrated circuit formed on a semiconductor substrate comprising: an interlayer dielectric formed above said substrate, wherein said interlayer dielectric comprises a material that is selected from the group consisting of silicon dioxide, polyimide, silicon nitride and parylene; an aluminum-nitride barrier layer formed on said interlayer dielectric; and a metal interconnection formed on and in contact with said aluminum-nitride barrier layer on said interlayer dielectric.
Claim 12
Dependent Claim
73 words
A high performance and reliable interconnect structure for an integrated circuit formed on a semiconductor substrate comprising: an interlayer dielectric formed above said substrate, wherein said interlayer dielectric comprises a material that is selected from the group consisting of silicon dioxide, polyimide, silicon nitride and parylene; an aluminum-nitride barrier layer formed on said interlayer dielectric; and a metal interconnection formed on and in contact with said aluminum-nitride barrier layer on said interlayer dielectric.
Claim 13
Dependent Claim
15 words
The interconnect structure of claim 10 wherein said aluminum-nitride barrier layer is formed by CVD.
Claim 14
Dependent Claim
16 words
The interconnect structure of claim 10 wherein said aluminum-nitride barrier layer is formed by reactive sputtering.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-20 | 2001-04-21 | 2001-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-20 | 2005-04-21 | 2005-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-20 | 2009-04-21 | 2009-10-21 | $7700.00 | Window Closed / Lapsed |