US3848260A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrode structure for a semiconductor device having a shallow junction and method for fabricating same
Assignee: NEC Corp
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Filing: 1972-11-13
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Granted: 1974-11-12
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Expires: 1992-11-13
Abstract
Abstract A thermally stable semiconductor device is disclosed in which a thin aluminum film is formed over a silicon oxide film selectively formed on the silicon substrate. A layer of a metal such as tantalum, tungsten, or molybdenum that does not enter into an alloy reaction with silicon at heat treatment temperatures is formed over the thin aluminum film and is covered with a thick aluminum film. Oxides of the upper thick aluminum layer as well as oxides of the non-alloying metal and the lower aluminum layer are selectively formed in alignment with one another at locations where the electrodes are not formed.
Inventors
- 👤 H Tsunemitsu
- 👤 H Shiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6324; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69393; H10P95/00; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
189 words
A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR SUBSTRATE, A SILICON OXIDE FILM SELECTIVELY FORMED OVER A MAJOR SURFACE OF SAID SUBSTRATE, A FIRST LAYER OF A FIRST METAL CAPABLE OF MAINTAING GOOD OHMIC CONTACT WITH THE SEMICONDUCTOR MATERIAL OF SAID SUBSTRATE, A SECOND LAYER OF A SECOND METAL FORMED OVER SAID FIRST LAYER, SAID SECOND METAL FORMING AN ALLOY REACTION WITH THE SEMICONDUCTOR MATERIAL OF SAID SUBSTRATE AT HIGHER TEMPERATURES THAN SAID FIRST METAL LAYER, AND A THIRD LAYER OF CONDUCTIVE METAL FORMED OVER SAID SECOND LAYER, PORTIONS OF SAID FRIST, SECOND AND THIRD LAYERS BEING SELECTIVELY ANODE-OXIDIZED TO FORM A PATTERN OF ALIGNED INSULATING REGIONS, THE UNOXIDIZED PORTIONS OF SAID FIRST, SECOND AND THIRD METAL LAYERS FORMING BEING COATED WITH AN ANODE-OXIDIZING F OF SAID THIRD LAYER BEING COATED WITH AN ANODE-OXIDIZING FILM OF THE METAL OF SAID THIRD LAYER EXCEPT FOR A SELECTED PORTION THEREOF WHICH IS PROVIDED FOR ELECTRICAL CONNECTION TO SAID ELECTRODE STRUCTURE OF SAID ANODE-OXIDIZING FILM COATING SAID THIRD LAYER BEING SUBSTANTIALLY FLUSH WITH THE SURFACE OF SAID ALIGNED INSULATING REGIONS, AND SAID INSULATING REGIONS AND SAID ELECTRODE STRUCTURE COMPLETELY COVERING SAID SILICON OXIDE FILM.
Claim 2
Dependent Claim
189 words
A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR SUBSTRATE, A SILICON OXIDE FILM SELECTIVELY FORMED OVER A MAJOR SURFACE OF SAID SUBSTRATE, A FIRST LAYER OF A FIRST METAL CAPABLE OF MAINTAING GOOD OHMIC CONTACT WITH THE SEMICONDUCTOR MATERIAL OF SAID SUBSTRATE, A SECOND LAYER OF A SECOND METAL FORMED OVER SAID FIRST LAYER, SAID SECOND METAL FORMING AN ALLOY REACTION WITH THE SEMICONDUCTOR MATERIAL OF SAID SUBSTRATE AT HIGHER TEMPERATURES THAN SAID FIRST METAL LAYER, AND A THIRD LAYER OF CONDUCTIVE METAL FORMED OVER SAID SECOND LAYER, PORTIONS OF SAID FRIST, SECOND AND THIRD LAYERS BEING SELECTIVELY ANODE-OXIDIZED TO FORM A PATTERN OF ALIGNED INSULATING REGIONS, THE UNOXIDIZED PORTIONS OF SAID FIRST, SECOND AND THIRD METAL LAYERS FORMING BEING COATED WITH AN ANODE-OXIDIZING F OF SAID THIRD LAYER BEING COATED WITH AN ANODE-OXIDIZING FILM OF THE METAL OF SAID THIRD LAYER EXCEPT FOR A SELECTED PORTION THEREOF WHICH IS PROVIDED FOR ELECTRICAL CONNECTION TO SAID ELECTRODE STRUCTURE OF SAID ANODE-OXIDIZING FILM COATING SAID THIRD LAYER BEING SUBSTANTIALLY FLUSH WITH THE SURFACE OF SAID ALIGNED INSULATING REGIONS, AND SAID INSULATING REGIONS AND SAID ELECTRODE STRUCTURE COMPLETELY COVERING SAID SILICON OXIDE FILM.
Claim 3
Dependent Claim
28 words
The semiconductor device of claim 1, in which said first metal is aluminum and sais second metal is selected from the group consisting of tantalum, tungsten, and molybdenum.
Claim 4
Dependent Claim
13 words
The semiconductor device of claim 2, in which said second metal is tantalum.
Claim 5
Dependent Claim
36 words
The semiconductor device of claim 1, further comprising a shallow P-N junction located between 0.2 and 0.8 micron beneath said substrate major surface, and said first layer being less than 0.01 and 0.05 micron in thickness.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-11 | 1978-05-13 | 1978-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-11 | 1982-05-13 | 1982-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-11 | 1986-05-13 | 1986-11-12 | $7700.00 | Window Closed / Lapsed |