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US4896204A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device and method of manufacturing thereof

Assignee: Mitsubishi Electric Corp
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Filing: 1988-07-25
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Granted: 1990-01-23
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Expires: 2008-07-25
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Abstract

Abstract An Al layer (6) is first formed to cover an opening region (9) for interconnection in a semiconductor device. Then, an Al-Si-Ti layer (7) having a higher degree of hardness than that of the Al layer (6) is formed on the Al layer (6) and subsequently a mixture layer (8) of aluminum hydrate and aluminum oxide is formed on the surface of the Al-Si-Ti layer (7). Thus, a multilayered film of electrode and interconnection (11) is formed.

Inventors

  • 👤 Yoshihiro Hirata
  • 👤 Reiji Tamaki
  • 👤 Takeshi Noguchi
  • 👤 Junichi Arima
  • 👤 Kenji Saitoh
  • 👤 Shigeru Harada

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 03:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/45; H10W20/48

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 80 words
A semiconductor device having an electrode and interconnection film covering an opening region for interconnection, wherein said electrode and interconnection film comprises a first metal layer comprising aluminum, a second metal layer comprising aluminum alloy formed on said first metal layer, the hardness of said second metal layer being of a higher value than that of said first metal layer, and a layer consisting essentially of a mixture of aluminum hydrate and aluminum oxide formed on said second metal layer.
Claim 2
Dependent Claim 80 words
A semiconductor device having an electrode and interconnection film covering an opening region for interconnection, wherein said electrode and interconnection film comprises a first metal layer comprising aluminum, a second metal layer comprising aluminum alloy formed on said first metal layer, the hardness of said second metal layer being of a higher value than that of said first metal layer, and a layer consisting essentially of a mixture of aluminum hydrate and aluminum oxide formed on said second metal layer.
Claim 3
Dependent Claim 16 words
A semiconductor device in accordance with claim 1, wherein said aluminum alloy is aluminum silicon titanium.
Claim 4
Dependent Claim 16 words
A semiconductor device in accordance with claim 1, wherein the first metal layer is aluminum silicon.
Claim 5
Dependent Claim 93 words
A semiconductor device having an electrode and interconnection film covering an opening region for interconnection, wherein said electrode and interconnection film comprises a first metal layer comprising aluminum and formed on a substrate while heating the substrate, a second metal layer comprising aluminum alloy formed on said first metal layer without heating said substrate, the hardness of the second metal layer being of a higher value than that of the first metal layer, and a layer consisting essentially of a mixture of aluminum hydrate and aluminum oxide formed on the second metal layer.
Claim 6
Dependent Claim 93 words
A semiconductor device having an electrode and interconnection film covering an opening region for interconnection, wherein said electrode and interconnection film comprises a first metal layer comprising aluminum and formed on a substrate while heating the substrate, a second metal layer comprising aluminum alloy formed on said first metal layer without heating said substrate, the hardness of the second metal layer being of a higher value than that of the first metal layer, and a layer consisting essentially of a mixture of aluminum hydrate and aluminum oxide formed on the second metal layer.

References Cited (Backward Citations)

US3866311A Cited
US4561009A Cited
US4471376A Cited
EP0079459A2 Cited
EP0082012A2 Cited
US4556897A Cited
WO1984001471A1 Cited
US4527184A Cited
EP0147247A2 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-01-22 1993-07-24 1994-01-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-01-22 1997-07-24 1998-01-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-01-22 2001-07-24 2002-01-23 $7700.00 Window Closed / Lapsed

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