EP0082012A2
Expired / Lapsed
EP
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Multilayer electrode of a semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1982-12-14
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Granted: —
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Expires: 2002-12-14
Abstract
Abstract A multilayer electrode (1, 27, 28, 29, 30) of a semiconductor device comprises a first layer (2, 24) of aluminium in contact with a silicon substrate (5, 12), second layer (3, 25) of a refractory metal or an alloy or compound thereof, and a third layer (4, 26) of an aluminium-silicon alloy. Such a semiconductor device including the aluminium-silicon alloy in its third layer can withstand heating at 500 DEG C.
Inventors
- 👤 Toru G.H. Takeuchi
- 👤 Ichiro Fujita
- 👤 Toshihiko Ono
- 👤 Kiyoshi Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 21:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D64/00; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
77 words
A multilayer electrode (1, 27, 28, 29, 30) of a semiconductor device comprising a first layer (2, 24) containing aluminium in contact with the surface of a silicon semiconductor substrate (5, 12), a second layer (3, 25) of a refractory metal or an alloy or compound thereof formed on the first layer,and a third layer (4, 26) containing aluminium formed on the second (3, 25) layer, characterised in that the third layer (4, 26) also contains silicon.
Claim 2
Dependent Claim
77 words
A multilayer electrode (1, 27, 28, 29, 30) of a semiconductor device comprising a first layer (2, 24) containing aluminium in contact with the surface of a silicon semiconductor substrate (5, 12), a second layer (3, 25) of a refractory metal or an alloy or compound thereof formed on the first layer,and a third layer (4, 26) containing aluminium formed on the second (3, 25) layer, characterised in that the third layer (4, 26) also contains silicon.
Claim 3
Dependent Claim
28 words
A multilayer electrode according to claim 1, in which the silicon in the third layer (4, 26) is present in an amount from 0.5% to 2.0% by weight.
Claim 4
Dependent Claim
19 words
A multilayer electrode according to claim 1 or 2, in which the first layer (2, 24) also contains silicon.
Claim 5
Dependent Claim
24 words
A multilayer electrode according to claims 1 or 3 in which the third and/or second layer contains copper or magnesium in addition to silicon.
Claim 6
Dependent Claim
30 words
A multilayer electrode according to any one of the preceding claims, in which the refractory metal is Ti, W, Mo, Zr, Cr, Hf, Nb, V, Ni, Pt, Ta or Pd.
Claim 7
Dependent Claim
24 words
A multilayer electrode according to any one of the preceding claims in which the alloy of the refractory metal is TiW, TiMo or TiTa.
Claim 8
Dependent Claim
28 words
A multilayer electrode according to any one of the preceding claims, in which the compound of the refractory metal is TiN, TaN, ZiN, WN, TiC, TaC or HfN.
Claim 9
Independent Claim
76 words
A method of making a multilayer electrode (1, 27, 28,29,30) of a semiconductor device comprising forming a first layer (2,24) containing aluminium in contact with the surface of a silicon semiconductor substrate (5,12) forming a second layer (3,25) of a refractory metal or an alloy or compound thereof formed on the first layer, and forming a third layer (4,26) on the second (3,25) layer, characterised in that the third layer (4,26) consists of an aluminium-silicon alloy.
Claim 10
Independent Claim
76 words
A method of making a multilayer electrode (1, 27, 28,29,30) of a semiconductor device comprising forming a first layer (2,24) containing aluminium in contact with the surface of a silicon semiconductor substrate (5,12) forming a second layer (3,25) of a refractory metal or an alloy or compound thereof formed on the first layer, and forming a third layer (4,26) on the second (3,25) layer, characterised in that the third layer (4,26) consists of an aluminium-silicon alloy.
References Cited (Backward Citations)
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