Integrated circuit device with an improved interconnection line

Claim 1

A semiconductor device comprising a semiconductor substrate, at least one element region formed in said semiconductor substrate, an insulating film covering said semiconductor substrate and having a contact hole which exposes one portion of said at least one element region, a first interconnection line making contact with said one portion of said at least one element region through said contact hole and extending over said insulating film, and a second interconnection line formed on said insulating film separately from said first interconnection line, each of said first and second interconnection lines comprising an aluminum layer, an alumina film formed on said aluminum layer, and a refractory metal silicide layer formed on said alumina film, said alumina film preventing an alloy reaction between said aluminum layer and said refractory metal silicide layer, said refractory metal silicide layer inhibiting hillock formation of said aluminum layer and electromigration of aluminum in said aluminum layer to prevent a breakdown of said interconnection lines.