US5667586A
Expired / Lapsed
US
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Method for forming a single crystal semiconductor on a substrate
Assignee: GlobalFoundries Inc
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Filing: 1996-04-01
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Granted: 1997-09-16
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Expires: 2016-04-01
Abstract
Abstract A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms. According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.
Inventors
- 👤 Bruce Allen Ek
- 👤 Stephen McConnell Gates
- 👤 Fernando Jose Guarin
- 👤 Subramanian Srikanteswara Iyer
- 👤 Adrian Roger Powell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:41
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10F; H10F71/00; H10F71/121; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
78 words
A method of forming a single crystalline layer of a compound on a first substrate comprising the steps of: bonding a major surface of a second single crystalline substrate of a first element to a major surface of said first substrate, said second substrate having a thickness of about 100 to about 10,000 angstroms, chemically reacting at least a second element with said first element of said second substrate to form a single crystalline layer of said compound.
Claim 2
Independent Claim
78 words
A method of forming a single crystalline layer of a compound on a first substrate comprising the steps of: bonding a major surface of a second single crystalline substrate of a first element to a major surface of said first substrate, said second substrate having a thickness of about 100 to about 10,000 angstroms, chemically reacting at least a second element with said first element of said second substrate to form a single crystalline layer of said compound.
Claim 3
Dependent Claim
73 words
The method of claim 1 further including the step of selecting said first substrate wherein said major surface of said second substrate has a adhesion greater than that of an adhesive tape test but low enough to permit slippage of said second substrate at the interface with said first substrate to accommodate lattice mismatching during the transformation via chemical reaction from said second substrate and to said single crystalline layer of said compound.
Claim 4
Dependent Claim
26 words
The method of claim 1 whereto said first element is silicon and said second element is carbon to form said single crystalline layer of silicon carbide.
Claim 5
Dependent Claim
66 words
A process for forming a single crystalline layer of a carbide on a first substrate which comprises depositing carbon from a solid carbon source at a rate of about 0.01 to about 0.02 angstroms/second, and temperature of about 800 to about 1,300 K, then heating to about 1,000 to about 1,300 K to convert the carbon layer to carbide by chemical reaction with the underlying substrate.
Claim 6
Dependent Claim
66 words
A process for forming a single crystalline layer of a carbide on a first substrate which comprises depositing carbon from a solid carbon source at a rate of about 0.01 to about 0.02 angstroms/second, and temperature of about 800 to about 1,300 K, then heating to about 1,000 to about 1,300 K to convert the carbon layer to carbide by chemical reaction with the underlying substrate.
Claim 7
Dependent Claim
27 words
The process of claim 4 wherein a buffer silicon layer of about 10 to about 100 angstroms thick is provided on the substrate intermediate the carbon layer.
Claim 8
Dependent Claim
10 words
The process of claim 4 whereby silicon carbide is formed.
Claim 9
Dependent Claim
9 words
The product obtained by the process of claim 4.
Claim 10
Dependent Claim
16 words
The product of claim 7 wherein said substrate is at least a four inch diameter substrate.
Claim 11
Dependent Claim
17 words
The product of claim 7 which further comprises a semiconductor layer located on said single crystal layer.
Claim 12
Dependent Claim
30 words
The product of claim 9 wherein said semiconductor is lattice matched to said single crystal layer and is selected from the group consisting of SiC, SiGe, SiGeC, AlN and GaN.
Claim 13
Dependent Claim
27 words
The product of claim 9 wherein said semiconductor is GaN and which further comprises a c-AlN layer located intermediate said semiconductor layer and said single crystal layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-15 | 2001-03-17 | 2001-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-15 | 2005-03-17 | 2005-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-15 | 2009-03-17 | 2009-09-16 | $7700.00 | Window Closed / Lapsed |