US5229333A
Expired / Lapsed
US
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Method for improving the interface characteristics of CaF2 on silicon
Assignee: Texas Instruments Inc
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Filing: 1992-02-28
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Granted: 1993-07-20
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Expires: 2012-02-28
Abstract
Abstract In one form of the invention, a method is disclosed for growing CaF 2 on a silicon surface, comprising the steps of maintaining the silicon surface at a first temperature below approximately 500° C., starting a deposition of CaF 2 on the silicon surface, stopping the deposition, and then annealing the CaF 2 in forming gas at a temperature below 600° C.
Inventors
- 👤 Chih-Chen Cho
- 👤 Tae S. Kim
- 👤 Bruce E. Gnade
- 👤 Yasushiro Nishioka
- 👤 Hung-Yu Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6516; H10P14/6529; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
74 words
A method for the growth of CaF 2 on a silicon surface, comprising the steps of: maintaining said silicon surface at an approximately fixed first temperature below approximately 500° C.; depositing CaF 2 on said surface; and annealing said CaF 2 on said silicon surface in reducing gas at a second temperature at or below approximately 600° C., whereby electric charge at the interface of said silicon surface and said CaF 2 is reduced.
Claim 2
Independent Claim
74 words
A method for the growth of CaF 2 on a silicon surface, comprising the steps of: maintaining said silicon surface at an approximately fixed first temperature below approximately 500° C.; depositing CaF 2 on said surface; and annealing said CaF 2 on said silicon surface in reducing gas at a second temperature at or below approximately 600° C., whereby electric charge at the interface of said silicon surface and said CaF 2 is reduced.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said approximately fixed temperature is 300° C.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein said depositing step is performed at the rate of approximately 4 nm/min.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said CaF 2 is deposited to a thickness of 100 nm.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein said reducing gas is 10% H 2 in N 2 .
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein said second temperature is 450° C.
Claim 8
Independent Claim
103 words
A method for the growth of CaF 2 on a silicon surface, comprising the steps of: maintaining said silicon surface at a first temperature below approximately 500° C.; starting a deposition of CaF 2 on said surface; ramping said first temperature to a second temperature over a first time period; maintaining said second temperature until said CaF 2 has deposited to a desired thickness; stopping said deposition; and annealing said CaF 2 on said silicon surface in reducing gas at a third temperature below approximately 600° C., whereby electric charge at the interface of said silicon surface and said CaF 2 is reduced.
Claim 9
Independent Claim
103 words
A method for the growth of CaF 2 on a silicon surface, comprising the steps of: maintaining said silicon surface at a first temperature below approximately 500° C.; starting a deposition of CaF 2 on said surface; ramping said first temperature to a second temperature over a first time period; maintaining said second temperature until said CaF 2 has deposited to a desired thickness; stopping said deposition; and annealing said CaF 2 on said silicon surface in reducing gas at a third temperature below approximately 600° C., whereby electric charge at the interface of said silicon surface and said CaF 2 is reduced.
Claim 10
Dependent Claim
13 words
The method of claim 7 wherein said first temperature is about 100° C.
Claim 11
Dependent Claim
14 words
The method of claim 7 wherein said second temperature is above about 600° C.
Claim 12
Dependent Claim
13 words
The method of claim 7 wherein said first time period is five minutes.
Claim 13
Dependent Claim
15 words
The method of claim 7 wherein said deposition occurs at the rate of 4 nm/min.
Claim 14
Dependent Claim
12 words
The method of claim 7 wherein said desired thickness is 100 nm.
Claim 15
Dependent Claim
17 words
The method of claim 7 wherein said reducing gas is 10% H 2 in N 2 .
Claim 16
Dependent Claim
12 words
The method of claim 7 wherein said third temperature is 450° C.
Claim 17
Independent Claim
74 words
A method for the growth of CaF 2 on a silicon surface, comprising the steps of: maintaining said silicon surface at an approximately fixed first temperature above approximately 500° C.; depositing CaF 2 on said surface; and annealing said CaF 2 on said silicon surface in reducing gas at a second temperature at or below approximately 600° C., whereby electric charge at the interface of said silicon surface and said CaF 2 is reduced.
Claim 18
Independent Claim
74 words
A method for the growth of CaF 2 on a silicon surface, comprising the steps of: maintaining said silicon surface at an approximately fixed first temperature above approximately 500° C.; depositing CaF 2 on said surface; and annealing said CaF 2 on said silicon surface in reducing gas at a second temperature at or below approximately 600° C., whereby electric charge at the interface of said silicon surface and said CaF 2 is reduced.
Claim 19
Dependent Claim
18 words
The method of claim 15 wherein said approximately fixed first temperature is between 500° C. and 800° C.
Claim 20
Dependent Claim
18 words
The method of claim 15 wherein said depositing step is performed at the rate of approximately 4 nm/min.
Claim 21
Dependent Claim
17 words
The method of claim 15 wherein said CaF 2 is deposited to a thickness of 100 nm.
Claim 22
Dependent Claim
17 words
The method of claim 15 wherein said reducing gas is 10% H 2 in N 2 .
Claim 23
Dependent Claim
12 words
The method of claim 15 wherein said second temperature is 450° C.
References Cited (Backward Citations)
No citation records indexed.
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