US5432808A
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Compound semicondutor light-emitting device
Assignee: Toshiba Corp
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Filing: 1994-03-15
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Granted: 1995-07-11
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Expires: 2014-03-15
Abstract
Abstract A compound semiconductor light-emitting device includes a cubic SiC substrate, and an Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on the (111) surface of the cubic-crystal SiC substrate. The surface of the Ga x Al y In 1-x-y N layer, which opposes the substrate, is an N surface, and the light-emitting device has a pn junction.
Inventors
- 👤 Ako Hatano
- 👤 Yasuo Ohba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:07
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H01S2304/00; H01S2304/04; H01S5/02; H01S5/0206; H01S5/021
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
31 words
A compound semiconductor device comprising: a cubic SiC substrate; and a Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on a (111) surface of said cubic SiC substrate.
Claim 2
Dependent Claim
31 words
A compound semiconductor device comprising: a cubic SiC substrate; and a Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on a (111) surface of said cubic SiC substrate.
Claim 3
Dependent Claim
49 words
The compound semiconductor device according to claim 1, wherein a conductivity type of said Ga x Al y In 1-x-y N layer is a p-type, and an n-type Ga x Al y In 1-x-y N layer is formed on said p-type Ga x Al y In 1-x-y N layer.
Claim 4
Dependent Claim
61 words
The compound semiconductor device according to claim 1, wherein a conductivity type of said Ga x Al y In 1-x-y N layer is a p-type, and a Ga x Al y In 1-x-y N layer and an n-type Ga x Al y In 1-x-y N layer is formed on said p-type Ga x Al y In 1-x-y N layer in turn.
Claim 5
Dependent Claim
60 words
The compound semiconductor device according to claim 1, which is a semiconductor laser and wherein a lower cladding layer comprising p-type Ga x Al y In 1-x-y N, a light-emitting layer comprising Ga x Al y In 1-x-y N, and an upper cladding layer comprising n-type Ga x Al y In 1-x-y N are formed on said substrate in turn.
Claim 6
Dependent Claim
73 words
The compound semiconductor device according to claim 1, which is a semiconductor laser and wherein a lower cladding layer comprising n-type Ga x Al y In 1-x-y N, a light-emitting layer comprising Ga x Al y In 1-x-y N, an upper cladding layer comprising p-type Ga x Al y In 1-x-y N, and a current blocking layer comprising n-type Ga x Al y In 1-x-y N are formed on said substrate in turn.
Claim 7
Dependent Claim
71 words
The compound semiconductor device according to claim 1, which is a semiconductor laser and wherein a buffer layer comprising Ga x Al y In 1-x-y N, a lower cladding layer comprising p-type Ga x Al y In 1-x-y N, a light-emitting layer comprising Ga x Al y In 1-x-y N, and an upper cladding layer comprising n-type Ga x Al y In 1-x-y N are formed on said substrate in turn.
Claim 8
Dependent Claim
48 words
A compound semiconductor device having a pn junction, comprising: a substrate; and a Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on said substrate, wherein a crystal face of said Ga x Al y In 1-x-y N layer opposing said substrate is an N surface.
Claim 9
Dependent Claim
48 words
A compound semiconductor device having a pn junction, comprising: a substrate; and a Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on said substrate, wherein a crystal face of said Ga x Al y In 1-x-y N layer opposing said substrate is an N surface.
Claim 10
Dependent Claim
13 words
The compound semiconductor device according to claim 7, wherein said substrate comprises SiC.
Claim 11
Dependent Claim
31 words
The compound semiconductor device according to claim 8, wherein a surface of said substrate on which said Ga x Al y In 1-x-y N layer is formed, is an Si surface.
Claim 12
Dependent Claim
49 words
The compound semiconductor device according to claim 7, wherein a conductivity type of said Ga x Al y In 1-x-y N layer is a p-type, and an n-type Ga x Al y In 1-x-y N layer is formed on said p-type Ga x Al y In 1-x-y N layer.
Claim 13
Dependent Claim
61 words
The compound semiconductor device according to claim 7, wherein a conductivity type of said Ga x Al y In 1-x-y N layer is a p-type, and a Ga x Al y In 1-x-y N layer and an n-type Ga x Al y In 1-x-y N layer is formed on said p-type Ga x Al y In 1-x-y N layer in turn.
Claim 14
Dependent Claim
60 words
The compound semiconductor device according to claim 7, which is a semiconductor laser and wherein a lower cladding layer comprising p-type Ga x Al y In 1-x-y N, a light-emitting layer comprising Ga x Al y In 1-x-y N, and an upper cladding layer comprising n-type Ga x Al y In 1-x-y N are formed on said substrate in turn.
Claim 15
Dependent Claim
72 words
The compound semiconductor device according to claim 7, which is a semiconductor laser and wherein a lower cladding layer comprising n-type Ga x Al y In 1-x-y N, a light-emitting layer comprising Ga x Al y In 1-x-y N, an upper cladding layer comprising p-type Ga x Al y In 1-x-y N, and current blocking layer comprising n-type Ga x Al y In 1-x-y N are formed on said substrate in turn.
Claim 16
Dependent Claim
31 words
The compound semiconductor device according to claim 7, wherein said substrate comprises a sapphire, and a buffer layer comprising Ga x Al y In 1-x-y N is formed on said substrate.
Claim 17
Dependent Claim
71 words
The compound semiconductor device according to claim 14, which is a semiconductor laser and wherein a buffer layer comprising Ga x Al y In 1-x-y N, a lower cladding layer comprising p-type Ga x Al y In 1-x-y N, a light-emitting layer comprising Ga x Al y In 1-x-y N, and an upper cladding layer comprising n-type Ga x Al y In 1-x-y N are formed on said substrate in turn.
Claim 18
Dependent Claim
50 words
A compound semiconductor device comprising: a p-type conductive substrate; a p-type Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on said substrate, and an n-type Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on said p-type Ga x Al y In 1-x-y N layer.
Claim 19
Dependent Claim
50 words
A compound semiconductor device comprising: a p-type conductive substrate; a p-type Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on said substrate, and an n-type Ga x Al y In 1-x-y N (0≦x≦1, 0≦y≦1) layer formed on said p-type Ga x Al y In 1-x-y N layer.
Claim 20
Dependent Claim
17 words
The compound semiconductor device according to claim 16, wherein said p-type conductive substrate comprises a p-type SiC.
Claim 21
Dependent Claim
62 words
The compound semiconductor device according to claim 16, which is a semiconductor laser and wherein a lower cladding layer comprising p-type Ga x Al y In 1-x-y N, a light-emitting layer comprising Ga x Al y In 1-x-y N, and an upper cladding layer comprising n-type Ga x Al y In 1-x-y N are formed on said p-type conductive substrate in turn.
Claim 22
Dependent Claim
73 words
The compound semiconductor device according to claim 16, which is a semiconductor laser and wherein a buffer layer comprising Ga x Al y In 1-x-y N, a lower cladding layer comprising p-type Ga x Al y In 1-x-y N, a light-emitting layer comprising Ga x Al y In 1-x-y N, and an upper cladding layer comprising n-type Ga x Al y In 1-x-y N are formed on said p-type conductive substrate in turn.
Claim 23
Dependent Claim
50 words
The compound semiconductor device according to claim 16, wherein a pair of electrodes are formed on a surface of said p-type conductive substrate on opposite side from said p-type Ga x Al y In 1-x-y N layer, and on said n-type Ga x Al y In 1-x-y N layer, respectively.
References Cited (Backward Citations)
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