Abstract Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga l-x Al x ) l-y In y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga l-x Al x ) l-y In y N (0≦x≦1, 0≦y≦1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400 to 1300° C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga l- x Al x ) l-y In y N are formed on the intermediate layer.
A gallium nitride type semiconductor device comprising: a silicon (Si) substrate; an intermediate layer consisting of a compound containing at least aluminum and nitrogen formed on said silicon substrate; and a crystal layer of (Ga l-x Al x ) l-y In y N (0≦x≦1, 0≦y=1, excluding the case of x=1 and y=0) formed on said intermediate layer.
Claim 2
Dependent Claim
57 words
A gallium nitride type semiconductor device comprising: a silicon (Si) substrate; an intermediate layer consisting of a compound containing at least aluminum and nitrogen formed on said silicon substrate; and a crystal layer of (Ga l-x Al x ) l-y In y N (0≦x≦1, 0≦y=1, excluding the case of x=1 and y=0) formed on said intermediate layer.
Claim 3
Dependent Claim
99 words
A gallium nitride type semiconductor device according to claim 1, wherein at least one other crystal layer of (Ga l-x Al x ) l-y In y N (0≦x≦1, 0≦y=1, excluding a case of x=1 and y=0) is formed on said crystal layer of (Ga l-x Al x ) l-y In y N (0≦x≦1, 0≦y=1, excluding the case of x=1 and y=0), the thus formed layer having different conductivity from that of said crystal layer and forming a pn junction, and x and y for each of the crystal layers are equal to each other or differ from each other.