US4997787A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a semiconductor film which is electrically isolated from a substrate
Assignee: Fujitsu Ltd
•
Filing: 1989-12-06
•
Granted: 1991-03-05
•
Expires: 2009-12-06
Abstract
Abstract A method for fabricating a crystal imperfection free silicon carbide (SiC) film electrically insulated from silicon substrate. A SiC film is heteroepitaxially grown over a silicon substrate, and set into a jig made of Teflon. The jig holds the substrate by its periphery, and exposes the bottom surface of the substrate which is opposite to the SiC film. The semiconductor substrate is etched off from its bottom side, and the lower surface of the SiC film is exposed. Silicon dioxide film is deposited to the lower surface of the SiC film and a second silicon substrate is adhered to the silicon dioxide film by applying pulse voltage. The surface of the SiC film fabricated in this way is never contacted to the silicon substrate, therefore, it is free from the crystal imperfections which occurs close to the contact surface to the silicon substrate. Accordingly, the SiC film formed in such a way is desirable for fabricating semiconductor devices.
Inventors
- 👤 Takashi Eshita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:51
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/01; H10D12/031; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/035; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6334; H10W; H10W10/00; H10W10/01; Y; Y10; Y10S; Y10S148/00; Y10S148/135; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
122 words
A method for fabricating a semiconductor film which is electrically isolated from a semiconductor substrate which supports said semiconductor film, said method comprising the steps of: (a) preparing a first semiconductor substrate; (b) heteroepitaxially growing said semiconductor film over said first semiconductor substrate; (c) etching off said first semiconductor substrate from the side of said first semiconductor substrate until lower surface of said semiconductor film is exposed, wherein said lower surface is in contact with said first semiconductor substrate until said first semiconductor substrate has been etched off; (d) forming an insulation film over the lower surface of said semiconductor film; (e) preparing a second semiconductor substrate; and (f) adhering said second semiconductor substrate to said semiconductor film intermediating said insulation film.
Claim 2
Independent Claim
122 words
A method for fabricating a semiconductor film which is electrically isolated from a semiconductor substrate which supports said semiconductor film, said method comprising the steps of: (a) preparing a first semiconductor substrate; (b) heteroepitaxially growing said semiconductor film over said first semiconductor substrate; (c) etching off said first semiconductor substrate from the side of said first semiconductor substrate until lower surface of said semiconductor film is exposed, wherein said lower surface is in contact with said first semiconductor substrate until said first semiconductor substrate has been etched off; (d) forming an insulation film over the lower surface of said semiconductor film; (e) preparing a second semiconductor substrate; and (f) adhering said second semiconductor substrate to said semiconductor film intermediating said insulation film.
Claim 3
Dependent Claim
22 words
A method for fabricating a semiconductor film as recited in claim 1, wherein: said semiconductor film is a silicon carbide (SiC) film.
Claim 4
Dependent Claim
22 words
A method for fabricating a semiconductor film as recited in claim 1 wherein: said first and second semiconductor substrates are silicon substrates.
Claim 5
Dependent Claim
24 words
A method for fabricating a semiconductor film as recited in claim 1 wherein: said insulation film is a silicon dioxide (SiO 2 ) film.
Claim 6
Dependent Claim
84 words
A method for fabricating a semiconductor film as recited in claim 1 wherein: said process (c) comprises the steps of: (c1) setting the substrate which is processed by said process (b) into a jig which holds said substrate by peripheral portion, and exposes only bottom side of said first semiconductor substrate, wherein said bottom side means the surface which is opposite to the side which is contacting to said semiconductor film; and (c2) immersing said jig which is holding said substrate into an etchant.
Claim 7
Dependent Claim
46 words
A method for fabricating a semiconductor film as recited in claim 1 wherein: said process (d) comprises the steps in succession: (d1) oxidizing lower surface of said semiconductor film by a thermal oxidation process; and (d2) depositing silicon dioxide film by a vapor phase deposition process.
Claim 8
Dependent Claim
31 words
A method for fabricating a semiconductor film as recited in claim 6, wherein: said process (d2) comprises one of the processes of chemical vapor deposition process, or plasma gas deposition process.
Claim 9
Dependent Claim
61 words
A method for fabricating a semiconductor film as recited in claim 1 wherein: said process (f) comprises the steps of: (f1) stacking said second semiconductor substrate, and said semiconductor film processed by the process (d) facing said insulation film and said second semiconductor substrate to each other; and (f2) applying pulse voltage between said semiconductor film and said second semiconductor substrate.
Claim 10
Dependent Claim
22 words
A method for fabricating a semiconductor film as recited in claim 2, wherein: said first and second semiconductor substrates are silicon substrates.
Claim 11
Dependent Claim
24 words
A method for fabricating a semiconductor film as recited in claim 2, wherein: said insulation film is a silicon dioxide (SiO 2 ) film.
Claim 12
Dependent Claim
83 words
A method for fabricating a semiconductor film as recited in claim 2, wherein: process (c) comprises the steps of: (c1) setting the substrate which is processed by said process (b) into a jig which holds said substrate by peripheral portion, and exposes only bottom side of said first semiconductor substrate, wherein said bottom side means the surface which is opposite to the side which is contacting to said semiconductor film; and (c2) immersing said jig which is holding said substrate into an etchant.
Claim 13
Dependent Claim
46 words
A method for fabricating a semiconductor film as recited in claim 2, wherein: said process (d) comprises the steps in succession: (d1) oxidizing lower surface of said semiconductor film by a thermal oxidation process; and (d2) depositing silicon dioxide film by a vapor phase deposition process.
Claim 14
Dependent Claim
31 words
A method for fabricating a semiconductor film as recited in claim 12, wherein: said process (d2) comprises one of the processes of chemical vapor deposition process, or plasma gas deposition process.
Claim 15
Dependent Claim
61 words
A method for fabricating a semiconductor film as recited in claim 2, wherein: said process (f) comprises the steps of: (f1) stacking said second semiconductor substrate, and said semiconductor film processed by the process (d) facing said insulation film and said second semiconductor substrate to each other; and (f2) applying pulse voltage between said semiconductor film and said second semiconductor substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-04 | 1994-09-03 | 1995-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-04 | 1998-09-03 | 1999-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-04 | 2002-09-03 | 2003-03-05 | $7700.00 | Window Closed / Lapsed |