US5230768A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the production of SiC single crystals by using a specific substrate crystal orientation
Assignee: Sharp Corp
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Filing: 1992-02-28
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Granted: 1993-07-27
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Expires: 2012-02-28
Abstract
Abstract There is provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward an off-direction, wherein the crystal orientation is defined by a deviation angle θ of 5 to 40 degrees, as measured from the [011] direction toward the [011] direction, and a tilt angle φ of 1 to 7 degrees, as measured from the [100] direction toward the off-direction; and growing a silicon carbide single crystal on the substrate.
Inventors
- 👤 Katsuki Furukawa
- 👤 Akira Suzuki
- 👤 Yoshihisa Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 14:42
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931; Y10S438/973
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
103 words
A method for the production of a silicon carbide single crystal, comprising the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward the direction of inclination of the growth plane, wherein said crystal orientation is defined by a deviation angle θ of 5 to 40 degrees, as measured form the [011] direction toward the [011] direction, and a tilt angle φ of 1 to 7 degrees, as measured from the [100] direction toward the direction of inclination of the growth plane and growing a silicon carbide single crystal on said substrate.
Claim 2
Independent Claim
103 words
A method for the production of a silicon carbide single crystal, comprising the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward the direction of inclination of the growth plane, wherein said crystal orientation is defined by a deviation angle θ of 5 to 40 degrees, as measured form the [011] direction toward the [011] direction, and a tilt angle φ of 1 to 7 degrees, as measured from the [100] direction toward the direction of inclination of the growth plane and growing a silicon carbide single crystal on said substrate.
Claim 3
Dependent Claim
37 words
A method for the production of a silicon carbide single crystal according to claim 1, wherein said silicon carbide single crystal is grown by chemical vapor deposition using a silicon source gas and a carbon source gas.
Claim 4
Dependent Claim
70 words
A method for the production of a silicon carbide single crystal according to claim 2, wherein said silicon source gas is at least one selected form the group consisting of silane (SiH 4 ), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), silicon tetrachloride (SiCl 4 ), trimethylchlorosilane ((CH 3 ) 2 SiCl), dimethyldichlorosilane ((CH 3 ) 2 SiCl 2 ), and disilane (Si 2 H 6 ).
Claim 5
Dependent Claim
58 words
A method for the production of a silicon carbide single crystal according to claim 2, wherein said carbon source gas is at least one selected from the group consisting of methane (CH 4 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), acethylene (C 2 H 2 ), and carbon tetrachloride (CCl 4 ).
Claim 6
Dependent Claim
25 words
A method for the production of a silicon carbide single crystal according to claim 2, wherein hydrogen chloride gas is added to said source gasses.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-26 | 1997-01-25 | 1997-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-26 | 2001-01-25 | 2001-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-26 | 2005-01-25 | 2005-07-27 | $7700.00 | Window Closed / Lapsed |