US4865659A
Expired / Lapsed
US
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Heteroepitaxial growth of SiC on Si
Assignee: Sharp Corp
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Filing: 1987-11-24
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Granted: 1989-09-12
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Expires: 2007-11-24
Abstract
Abstract A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.
Inventors
- 👤 Mitsuhiro Shigeta
- 👤 Akira Suzuki
- 👤 Katsuki Furukawa
- 👤 Yoshihisa Fujii
- 👤 Akitsugu Hatano
- 👤 Atsuko Uemoto
- 👤 Kenji Nakanishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 16:44
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S148/00; Y10S148/029; Y10S148/072; Y10S148/097; Y10S148/148; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
81 words
A heteroepitaxial growth method for the growth of a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of said semiconductor single-crystal film, wherein said method comprises growing said semiconductor single-crystal film on the (n11) plane of said semiconductor single-crystal substrate by chemical vapor deposition, wherein n is an integer of 3 or greater, the epitaxial orientation of said semiconductor single-crystal film being inclined at a certain angle with respect to said semiconductor single-crystal substrate.
Claim 2
Dependent Claim
81 words
A heteroepitaxial growth method for the growth of a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of said semiconductor single-crystal film, wherein said method comprises growing said semiconductor single-crystal film on the (n11) plane of said semiconductor single-crystal substrate by chemical vapor deposition, wherein n is an integer of 3 or greater, the epitaxial orientation of said semiconductor single-crystal film being inclined at a certain angle with respect to said semiconductor single-crystal substrate.
Claim 3
Dependent Claim
34 words
A heteroepitaxial growth method according to claim 1, wherein said inclination of the epitaxial orientation of said semiconductor single-crystal film to said semiconductor single-crystal substrate is in the range of 0.1 to 30 degrees.
Claim 4
Dependent Claim
26 words
A heteroepitaxial growth method according to claim 1, wherein said semiconductor single-crystal substrate is composed of Si and said semiconductor single-crystal film is composed of SiC.
Claim 5
Dependent Claim
14 words
A heteroepitaxial growth method according to claim 1, wherein n is 3 to 6.
Claim 6
Dependent Claim
63 words
A heterostructure composed of a semiconductor single-crystal substrate and a semiconductor single-crystal layer with a lattice constant different from that of said substrate that is epitaxially formed on a (n11) face of said substrate, wherein n is an integer greater than 1, the epitaxial orientation of said semiconductor single-crystal layer being inclined at a certain angle with respect to said semiconductor single-crystal substrate.
Claim 7
Dependent Claim
63 words
A heterostructure composed of a semiconductor single-crystal substrate and a semiconductor single-crystal layer with a lattice constant different from that of said substrate that is epitaxially formed on a (n11) face of said substrate, wherein n is an integer greater than 1, the epitaxial orientation of said semiconductor single-crystal layer being inclined at a certain angle with respect to said semiconductor single-crystal substrate.
Claim 8
Dependent Claim
24 words
A heterostructure according to claim 5, wherein said semiconductor single-crystal substrate is composed of Si and said semiconductor single-crystal layer is composed of SiC.
Claim 9
Dependent Claim
32 words
A heterostructure according to claim 5, wherein the inclination of the epitaxial orientation of said semiconductor single-crystal layer to said semiconductor single-crystal substrate is in the range of 0.1 to 30 degrees.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-09-11 | 1993-03-13 | 1993-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-11 | 1997-03-13 | 1997-09-12 | $3760.00 | Window Closed / Lapsed |
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