Patent US5665210A successfully refreshed from Google Patents.
US5665210A
Expired / Lapsed
US
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Method of forming insulating films, capacitances, and semiconductor devices
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-05-27
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Granted: 1997-09-09
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Expires: 2014-05-27
Abstract
Abstract Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion of the inert gas is decreased to 25 atom % or lower. By this sputtering condition, adverse effects caused by the inert gas is suppressed so that the quality of the insulating film is substantially improved.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:04
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/06; C23C14/0641; C23C14/0652; C23C14/08; C23C14/083; C23C14/088; H10D64/0134; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/693; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394; H10P14/69398
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
126 words
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM (dynamic random access memory), said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising an oxide of a metal; and forming an upper electrode of said capacitor on said dielectric layer, wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
Claim 2
Independent Claim
126 words
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM (dynamic random access memory), said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising an oxide of a metal; and forming an upper electrode of said capacitor on said dielectric layer, wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said metal is selected from the group consisting of tantalum and titanium.
Claim 4
Dependent Claim
27 words
The method of claim 2 wherein said oxygen containing gas is selected from the group consisting of O 2 , O 3 , and N 2 O.
Claim 5
Independent Claim
120 words
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material, and forming an upper electrode of said capacitor on said dielectric layer wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
Claim 6
Independent Claim
120 words
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material, and forming an upper electrode of said capacitor on said dielectric layer wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
Claim 7
Dependent Claim
27 words
The method of claim 4 wherein said oxygen containing gas is selected from the group consisting of O 2 , O 3 , and N 2 O.
Claim 8
Dependent Claim
21 words
The method of claim 5 wherein said ferroelectric material is selected from the group consisting of barium titanate and lead titanate.
Claim 9
Independent Claim
149 words
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a LOCOS (field insulating film) on or within said semiconductor substrate for isolating said transistor; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material, and forming an upper electrode of said capacitor on said dielectric layer, wherein said capacitor is located over at least a portion of said LOCOS, wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
Claim 10
Independent Claim
149 words
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a LOCOS (field insulating film) on or within said semiconductor substrate for isolating said transistor; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material, and forming an upper electrode of said capacitor on said dielectric layer, wherein said capacitor is located over at least a portion of said LOCOS, wherein said sputtering gas contains an oxygen containing gas at a concentration of 75% or higher.
Claim 11
Dependent Claim
27 words
The method of claim 7 wherein said oxygen containing gas is selected from the group consisting of O 2 , O 3 , and N 2 O.
Claim 12
Dependent Claim
21 words
The method of claim 7 wherein said ferroelectric material is selected from the group consisting of barium titanate and lead titanate.
Claim 13
Independent Claim
137 words
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material; and forming an upper electrode of said capacitor on said dielectric layer, wherein said sputtering gas contains an oxygen containing oxygen at a concentration of 75% or higher, wherein said capacitor is located over at least a portion of a gate electrode of said transistor.
Claim 14
Independent Claim
137 words
A method of forming an oxide dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said oxide dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a ferroelectric material; and forming an upper electrode of said capacitor on said dielectric layer, wherein said sputtering gas contains an oxygen containing oxygen at a concentration of 75% or higher, wherein said capacitor is located over at least a portion of a gate electrode of said transistor.
Claim 15
Dependent Claim
21 words
The method of claim 10 wherein said ferroelectric material is selected from the group consisting of barium titanate and lead titanate.
Claim 16
Dependent Claim
14 words
The method of claim 10 wherein said DRAM is of a 1 Tr/Cell type.
Claim 17
Independent Claim
116 words
A method of forming a nitride dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said nitride dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a nitride, and forming an upper electrode of said capacitor on said dielectric layer, wherein said sputtering gas contains nitrogen at a concentration of 75% or higher.
Claim 18
Independent Claim
116 words
A method of forming a nitride dielectric layer of a storage capacitor coupled with a transistor for a DRAM, said method comprising the steps of: preparing a semiconductor substrate having at least source, drain and channel regions of said transistor formed therein; forming a lower electrode of said storage capacitor on said semiconductor substrate, said lower electrode being connected to one of said source or drain of said transistor; forming said nitride dielectric layer on said lower electrode by sputtering in a sputtering gas, said oxide dielectric layer comprising a nitride, and forming an upper electrode of said capacitor on said dielectric layer, wherein said sputtering gas contains nitrogen at a concentration of 75% or higher.
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