US4987008A
Expired / Lapsed
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Thin film formation method
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-06-27
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Granted: 1991-01-22
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Expires: 2006-06-27
Abstract
Abstract PCT No. PCT/JP86/00328 Sec. 371 Date Mar. 2, 1987 Sec. 102(e) Date Mar. 2, 1987 PCT Filed Jun. 27, 1986 PCT Pub. No. WO87/00346 PCT Pub. Date Jan. 15, 1987.Film formation without damage on the surface of semiconductor can be established by generating active halogen or active hydrogen by a photochemical reaction, cleaning on the surface of the semiconductor by removing oxide formed thereon by means of the active elements, and continuously thereafter fabricating the film by a photochemical reaction in the same device.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Kazuo Urata
- 👤 Mamoru Tashiro
- 👤 Yuji Tanamura
- 👤 Shinji Imato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6508; G; G03; G03F; G03F7/00; G03F7/70; G03F7/708; G03F7/70908; G03F7/70925; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/694; H10P14/6943; H10P14/69433; H10P70/00; H10P70/10; H10P70/12; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6338; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
59 words
A thin film formation method characterized by a process which cleans a surface of a semiconductor substrate by the removal of oxides and dirt without damaging the surface by exposing the surface to active hydrogen generated from the photochemical decomposition of hydrogen or nonoxide hydrides, and a subsequent process that forms a thin film of nonoxides on the substrate.
Claim 2
Dependent Claim
59 words
A thin film formation method characterized by a process which cleans a surface of a semiconductor substrate by the removal of oxides and dirt without damaging the surface by exposing the surface to active hydrogen generated from the photochemical decomposition of hydrogen or nonoxide hydrides, and a subsequent process that forms a thin film of nonoxides on the substrate.
Claim 3
Dependent Claim
21 words
The thin film formation method as claimed in claim 1 or claim 2 wherein the nonoxide hydride comprises ammonia or hydrazine.
Claim 4
Dependent Claim
37 words
The thin film formation method as claimed in claim 1, wherein the nonoxide thin film is a film of silicon nitride or aluminum nitride formed in the range of temperature between the room temperature and 250° C.
Claim 5
Dependent Claim
37 words
A thin film formation method as in claim 1 where said subsequent process is a photochemical decomposition process and where the same light source is used for both the cleaning process and the thin film forming process.
Claim 6
Dependent Claim
17 words
A thin film formation method as in claim 1 where the substrate comprises a Group III-V compound.
Claim 7
Dependent Claim
14 words
A thin film formation method as in claim 1 where the substrate comprises silicon.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-01-21 | 1994-07-23 | 1995-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-21 | 1998-07-23 | 1999-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-21 | 2002-07-23 | 2003-01-22 | $7700.00 | Window Closed / Lapsed |