US4693779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing apparatus for semiconductor devices
Assignee: Hitachi Ltd
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Filing: 1985-11-14
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Granted: 1987-09-15
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Expires: 2005-11-14
Abstract
Abstract A semiconductor device manufacturing apparatus is disclosed which comprises a reaction chamber; at least one light source for radiating light to a wafer disposed in the reaction chamber and performing plural processes by the photo-assisted reactions; a gas introducing means for introducing gaseous reactants into the reaction chamber; a gas exhausting means for exhausting the interior of the reaction chamber; and a light source for removing by light irradiation undesirable gaseous constituents which adhered to the wafer and the chamber inner wall in the preceding step. Since undesirable gaseous constituents adhered to the wafer and thereabouts can be removed, it is possible to effect plural processes for the wafer in the same chamber.
Inventors
- 👤 Hidekazu Okuhira
- 👤 Yasuo Wada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:47
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/483
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
93 words
A semiconductor device manufacturing apparatus comprising: a reaction chamber; a first light source means having at least one first light source for radiating light to a wafer disposed in said reaction chamber to induce photo-assisted reactions for performing a plurality of processes; a gas introducing means for introducing gaseous reactants into said reaction chamber; a gas exhausting means for exhausting the interior of said reaction chamber; and a second light source means for removing by light irradiation undesirable gaseous constituents which adhere to said wafer and an inner wall of said reaction chamber.
Claim 2
Dependent Claim
93 words
A semiconductor device manufacturing apparatus comprising: a reaction chamber; a first light source means having at least one first light source for radiating light to a wafer disposed in said reaction chamber to induce photo-assisted reactions for performing a plurality of processes; a gas introducing means for introducing gaseous reactants into said reaction chamber; a gas exhausting means for exhausting the interior of said reaction chamber; and a second light source means for removing by light irradiation undesirable gaseous constituents which adhere to said wafer and an inner wall of said reaction chamber.
Claim 3
Dependent Claim
29 words
A semiconductor device manufacturing apparatus according to claim 1, wherein said second light source means has at least one second light source which is disposed within said reaction chamber.
Claim 4
Dependent Claim
25 words
A semiconductor device manufacturing apparatus according to claim 1, wherein said second light source means emits light having a wave length of an ultraviolet region.
Claim 5
Dependent Claim
19 words
A semiconductor device manufacturing apparatus according to claim 3, wherein said second light source means is a xenon lamp.
Claim 6
Dependent Claim
48 words
A semiconductor device manufacturing apparatus according to claim 2, wherein the second light source means is a light source means for emitting light to strike the inner wall of said reaction chamber thereby to remove undesirable gaseous constituents which adhere to said inner wall of said reaction chamber.
Claim 7
Dependent Claim
59 words
A semiconductor device manufacturing apparatus according to claim 2, wherein the second light source means is a light source means for emitting light to strike the surface of the wafer and to strike said inner wall of said reaction chamber thereby to remove undesirable gaseous constituents which adhere to said wafer and said inner wall of said reaction chamber.
Claim 8
Dependent Claim
48 words
A semiconductor device manufacturing apparatus according to claim 1, wherein the second light source means is a light source means for emitting light to strike the inner wall of said reaction chamber thereby to remove undesirable gaseous constituents which adhere to said inner wall of said reaction chamber.
Claim 9
Dependent Claim
59 words
A semiconductor device manufacturing apparatus according to claim 1, wherein the second light source means is a light source means for emitting light to strike the surface of the wafer and to strike said inner wall of said reaction chamber thereby to remove undesirable gaseous constituents which adhere to said wafer and said inner wall of said reaction chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-14 | 1991-03-16 | 1991-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-14 | 1995-03-16 | 1995-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-14 | 1999-03-16 | 1999-09-15 | $7700.00 | Window Closed / Lapsed |