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US4693779A Expired / Lapsed US ⏱️ 0.0 years remaining

Manufacturing apparatus for semiconductor devices

Assignee: Hitachi Ltd
•
Filing: 1985-11-14
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Granted: 1987-09-15
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Expires: 2005-11-14
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Abstract

Abstract A semiconductor device manufacturing apparatus is disclosed which comprises a reaction chamber; at least one light source for radiating light to a wafer disposed in the reaction chamber and performing plural processes by the photo-assisted reactions; a gas introducing means for introducing gaseous reactants into the reaction chamber; a gas exhausting means for exhausting the interior of the reaction chamber; and a light source for removing by light irradiation undesirable gaseous constituents which adhered to the wafer and the chamber inner wall in the preceding step. Since undesirable gaseous constituents adhered to the wafer and thereabouts can be removed, it is possible to effect plural processes for the wafer in the same chamber.

Inventors

  • 👤 Hidekazu Okuhira
  • 👤 Yasuo Wada

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 22:13
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/483

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 93 words
A semiconductor device manufacturing apparatus comprising: a reaction chamber; a first light source means having at least one first light source for radiating light to a wafer disposed in said reaction chamber to induce photo-assisted reactions for performing a plurality of processes; a gas introducing means for introducing gaseous reactants into said reaction chamber; a gas exhausting means for exhausting the interior of said reaction chamber; and a second light source means for removing by light irradiation undesirable gaseous constituents which adhere to said wafer and an inner wall of said reaction chamber.
Claim 2
Dependent Claim 93 words
A semiconductor device manufacturing apparatus comprising: a reaction chamber; a first light source means having at least one first light source for radiating light to a wafer disposed in said reaction chamber to induce photo-assisted reactions for performing a plurality of processes; a gas introducing means for introducing gaseous reactants into said reaction chamber; a gas exhausting means for exhausting the interior of said reaction chamber; and a second light source means for removing by light irradiation undesirable gaseous constituents which adhere to said wafer and an inner wall of said reaction chamber.
Claim 3
Dependent Claim 29 words
A semiconductor device manufacturing apparatus according to claim 1, wherein said second light source means has at least one second light source which is disposed within said reaction chamber.
Claim 4
Dependent Claim 25 words
A semiconductor device manufacturing apparatus according to claim 1, wherein said second light source means emits light having a wave length of an ultraviolet region.
Claim 5
Dependent Claim 19 words
A semiconductor device manufacturing apparatus according to claim 3, wherein said second light source means is a xenon lamp.
Claim 6
Dependent Claim 48 words
A semiconductor device manufacturing apparatus according to claim 2, wherein the second light source means is a light source means for emitting light to strike the inner wall of said reaction chamber thereby to remove undesirable gaseous constituents which adhere to said inner wall of said reaction chamber.
Claim 7
Dependent Claim 59 words
A semiconductor device manufacturing apparatus according to claim 2, wherein the second light source means is a light source means for emitting light to strike the surface of the wafer and to strike said inner wall of said reaction chamber thereby to remove undesirable gaseous constituents which adhere to said wafer and said inner wall of said reaction chamber.
Claim 8
Dependent Claim 48 words
A semiconductor device manufacturing apparatus according to claim 1, wherein the second light source means is a light source means for emitting light to strike the inner wall of said reaction chamber thereby to remove undesirable gaseous constituents which adhere to said inner wall of said reaction chamber.
Claim 9
Dependent Claim 59 words
A semiconductor device manufacturing apparatus according to claim 1, wherein the second light source means is a light source means for emitting light to strike the surface of the wafer and to strike said inner wall of said reaction chamber thereby to remove undesirable gaseous constituents which adhere to said wafer and said inner wall of said reaction chamber.

References Cited (Backward Citations)

US4427723A Cited
JPS6037733A Cited
US4490210A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-09-14 1991-03-16 1991-09-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-09-14 1995-03-16 1995-09-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-09-14 1999-03-16 1999-09-15 $7700.00 Window Closed / Lapsed

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