US4903102A
Expired / Lapsed
US
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Semiconductor photoelectric conversion device and method of making the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1989-07-14
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Granted: 1990-02-20
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Expires: 2009-07-14
Abstract
Abstract A semiconductor photoelectric conversion device is provided with a PIN structure which comprises P-type, I-type and N-type non-single-crystal semiconductor layers laminated in that order or in the reverse order. The I-type layer contains a recombination center neutralizer by hydrogen or fluorine and is doped with an alkali metal element by lithium, sodium or potassium, in a concentration higher than that of oxygen and/or nitrogen that the I-type layer contains. Further, the I-type layer is doped with a P-type impurity such as boron so as to compensate for the N-type conductivity of the alkali metal element. The PIN structure is formed by a CVD method. The I-type layer is doped with the alkali metal element by using as alkali metal element material gas during the formation of the I-type layer, or by dipping the PIN structure into an aqueous solution of the alkali metal element or implanting alkali metal element ions into the PIN structure after forming the structure.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:22
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S438/00; Y10S438/904
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
98 words
A semiconductor device comprising: a substrate; and a non-single-crystalline semiconductor layer formed on said substrate and including an intrinsic region; wherein the intrinsic region of said semiconductor layer is doped with lithium for neutralizing trapping centers generated by incident radiant rays and doped with boron for compensating the conductivity type which is biased by virtue of said doping of lithium and the concentration of lithium in the intrinsic region is below 2×10 19 atom/cm 3 and the concentration of the boron is in the range of 5×10 15 to 5×10 18 atom/cm 3 to form the intrinsic region.
Claim 2
Dependent Claim
98 words
A semiconductor device comprising: a substrate; and a non-single-crystalline semiconductor layer formed on said substrate and including an intrinsic region; wherein the intrinsic region of said semiconductor layer is doped with lithium for neutralizing trapping centers generated by incident radiant rays and doped with boron for compensating the conductivity type which is biased by virtue of said doping of lithium and the concentration of lithium in the intrinsic region is below 2×10 19 atom/cm 3 and the concentration of the boron is in the range of 5×10 15 to 5×10 18 atom/cm 3 to form the intrinsic region.
Claim 3
Dependent Claim
39 words
A semiconductor device as in claim 1 including a lower electrode disposed between said semiconductor layer and the substrate and an upper electrode disposed on the semiconductor layer so that the semiconductor device functions as a photoelectric conversion device.
Claim 4
Dependent Claim
24 words
A semiconductor device as in claims 1 or 2 where said semiconductor layer includes a PIN junction, an NI junction, or a PI junction.
Claim 5
Dependent Claim
42 words
A semiconductor device as in claims 1 or 2 including oxygen and sodium in the intrinsic region where the concentration of the oxygen is below 5×10 18 atom/cm 3 and the concentration of the sodium is below 2×10 19 atom/cm 3 .
Claim 6
Dependent Claim
42 words
A semiconductor device to claim 1 wherein the intrinsic region contains an oxygen and/or nitrogen impurity and the concentration of lithium is higher than the concentration of the oxygen and/or nitrogen impurity contained in the intrinsic region of the non-single-crystalline semiconductor layer.
Claim 7
Dependent Claim
51 words
A semiconductor device to claim 3 wherein the intrinsic region contains an oxygen and/or nitrogen impurity and the concentration of the oxygen and/or nitrogen impurity in the intrinsic region of the non-single-crystalline semiconductor layer is below 5×10 18 atom/cm 3 in a region except those near the P-type or N-type regions.
Claim 8
Dependent Claim
24 words
A semiconductor photoelectric conversion device according to claim 3 wherein the P-type semiconductor layer region is formed of Si x C 1-x (where 0<x<1).
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-19 | 1993-08-21 | 1994-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-19 | 1997-08-21 | 1998-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-19 | 2001-08-21 | 2002-02-20 | $7700.00 | Window Closed / Lapsed |