US4849081A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of oxide films by reactive sputtering
Assignee: Messer LLC
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Filing: 1988-06-22
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Granted: 1989-07-18
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Expires: 2008-06-22
Abstract
Abstract In reactive sputtering of silicon, titanium, aluminum or tin in an oxygen-containing atmosphere to deposit a layer of the corresponding oxide on a substrate, the deposition rate is markedly enhanced by addition of chlorine to the atmosphere. The resulting films contain at most minor amounts of chlorine, so that mechanical, chemical and optical properties of the films are not substantially altered by use of chlorine in the process.
Inventors
- 👤 Randall G. Ross
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:19
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/081; C23C14/0021; C23C14/0036; C23C14/0057; C23C14/083; C23C14/086; C23C14/10
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
82 words
A method of making an oxide film comprising the steps of providing a target including a metal or metalloid element selected from the group consisting of Si, Ti, Al, Sn and combinations thereof, providing a substrate in proximity to said target, exposing a surface of said target to a plasma containing oxygen and chlorine and maintaining said target at a sputtering potential with respect to said plasma so that material is dislodged from said exposed target surface and deposited on said substrate.
Claim 2
Independent Claim
82 words
A method of making an oxide film comprising the steps of providing a target including a metal or metalloid element selected from the group consisting of Si, Ti, Al, Sn and combinations thereof, providing a substrate in proximity to said target, exposing a surface of said target to a plasma containing oxygen and chlorine and maintaining said target at a sputtering potential with respect to said plasma so that material is dislodged from said exposed target surface and deposited on said substrate.
Claim 3
Dependent Claim
21 words
A method as claimed in claim 1 wherein said target consists essentially of said metal or metalloid element and combinations thereof.
Claim 4
Dependent Claim
28 words
A method as claimed in claim 2 wherein said metal or metalloid element is a single element selected from the group consisting of Si, Ti, Al, and Sn.
Claim 5
Dependent Claim
15 words
A method as claimed in claim 1 wherein said metal or metalloid element is Si.
Claim 6
Dependent Claim
15 words
A method as claimed in claim 1 wherein said metal or metalloid element is Ti.
Claim 7
Dependent Claim
36 words
A method as claimed in claim 1 wherein said step of exposing said target to a plasma includes the steps of supplying a plasma-forming gas including oxygen and chlorine and converting said gas to said plasma.
Claim 8
Dependent Claim
56 words
A method as claimed in claim 6 wherein said plasma-forming gas includes a first gaseous species containing oxygen and a second gaseous species containing chlorine, the method further comprising the step of controlling the proportion of chlorine to oxygen in said plasma by controlling the proportion of said first and second species in said plasma-forming gas.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 7 wherein said chlorine-containing species includes a compound containing both carbon and chlorine.
Claim 10
Dependent Claim
25 words
A method as claimed in claim 8 wherein said compound is selected from the group consisting of chlorinated hydrocarbons having fewer than 4 carbon atoms.
Claim 11
Dependent Claim
14 words
A method as claimed in claim 8 wherein said compound is CCl 4 .
Claim 12
Dependent Claim
15 words
A method as claimed in claim 7 wherein said oxygen-containing species is O 2 .
Claim 13
Dependent Claim
16 words
A method as claimed in claim 7 wherein said plasma-forming gas further includes a noble gas.
Claim 14
Dependent Claim
13 words
A method as claimed in claim 12 wherein said noble gas is argon.
Claim 15
Dependent Claim
16 words
A method as claimed in claim 6 wherein said plasma-forming gas is substantially free of fluorine.
Claim 16
Dependent Claim
16 words
A method as claimed in claim 6 wherein said plasma-forming gas is substantially free of hydrogen.
Claim 17
Dependent Claim
19 words
A method as claimed in claim 1 further comprising the step of substantially isolating said substrate from said plasma.
Claim 18
Dependent Claim
41 words
A method as claimed in claim 1 further comprising the step of maintaining a film of an oxide of said metal or metalloid element on said exposed surface of said target during said step of exposing said target to said plasma.
References Cited (Backward Citations)
US3477936A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-17 | 1993-01-16 | 1993-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-17 | 1997-01-16 | 1997-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-17 | 2001-01-16 | 2001-07-18 | $7700.00 | Window Closed / Lapsed |