Patent JPS5889073A successfully refreshed from Google Patents.
Patent US4849081A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4849081A Expired / Lapsed US ⏱️ 0.0 years remaining

Formation of oxide films by reactive sputtering

Assignee: Messer LLC
•
Filing: 1988-06-22
•
Granted: 1989-07-18
•
Expires: 2008-06-22
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract In reactive sputtering of silicon, titanium, aluminum or tin in an oxygen-containing atmosphere to deposit a layer of the corresponding oxide on a substrate, the deposition rate is markedly enhanced by addition of chlorine to the atmosphere. The resulting films contain at most minor amounts of chlorine, so that mechanical, chemical and optical properties of the films are not substantially altered by use of chlorine in the process.

Inventors

  • 👤 Randall G. Ross

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 08:31
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/081; C23C14/0021; C23C14/0036; C23C14/0057; C23C14/083; C23C14/086; C23C14/10

Claims Analysis

Total Claims: 18
Claim 1
Independent Claim 82 words
A method of making an oxide film comprising the steps of providing a target including a metal or metalloid element selected from the group consisting of Si, Ti, Al, Sn and combinations thereof, providing a substrate in proximity to said target, exposing a surface of said target to a plasma containing oxygen and chlorine and maintaining said target at a sputtering potential with respect to said plasma so that material is dislodged from said exposed target surface and deposited on said substrate.
Claim 2
Independent Claim 82 words
A method of making an oxide film comprising the steps of providing a target including a metal or metalloid element selected from the group consisting of Si, Ti, Al, Sn and combinations thereof, providing a substrate in proximity to said target, exposing a surface of said target to a plasma containing oxygen and chlorine and maintaining said target at a sputtering potential with respect to said plasma so that material is dislodged from said exposed target surface and deposited on said substrate.
Claim 3
Dependent Claim 21 words
A method as claimed in claim 1 wherein said target consists essentially of said metal or metalloid element and combinations thereof.
Claim 4
Dependent Claim 28 words
A method as claimed in claim 2 wherein said metal or metalloid element is a single element selected from the group consisting of Si, Ti, Al, and Sn.
Claim 5
Dependent Claim 15 words
A method as claimed in claim 1 wherein said metal or metalloid element is Si.
Claim 6
Dependent Claim 15 words
A method as claimed in claim 1 wherein said metal or metalloid element is Ti.
Claim 7
Dependent Claim 36 words
A method as claimed in claim 1 wherein said step of exposing said target to a plasma includes the steps of supplying a plasma-forming gas including oxygen and chlorine and converting said gas to said plasma.
Claim 8
Dependent Claim 56 words
A method as claimed in claim 6 wherein said plasma-forming gas includes a first gaseous species containing oxygen and a second gaseous species containing chlorine, the method further comprising the step of controlling the proportion of chlorine to oxygen in said plasma by controlling the proportion of said first and second species in said plasma-forming gas.
Claim 9
Dependent Claim 19 words
A method as claimed in claim 7 wherein said chlorine-containing species includes a compound containing both carbon and chlorine.
Claim 10
Dependent Claim 25 words
A method as claimed in claim 8 wherein said compound is selected from the group consisting of chlorinated hydrocarbons having fewer than 4 carbon atoms.
Claim 11
Dependent Claim 14 words
A method as claimed in claim 8 wherein said compound is CCl 4 .
Claim 12
Dependent Claim 15 words
A method as claimed in claim 7 wherein said oxygen-containing species is O 2 .
Claim 13
Dependent Claim 16 words
A method as claimed in claim 7 wherein said plasma-forming gas further includes a noble gas.
Claim 14
Dependent Claim 13 words
A method as claimed in claim 12 wherein said noble gas is argon.
Claim 15
Dependent Claim 16 words
A method as claimed in claim 6 wherein said plasma-forming gas is substantially free of fluorine.
Claim 16
Dependent Claim 16 words
A method as claimed in claim 6 wherein said plasma-forming gas is substantially free of hydrogen.
Claim 17
Dependent Claim 19 words
A method as claimed in claim 1 further comprising the step of substantially isolating said substrate from said plasma.
Claim 18
Dependent Claim 41 words
A method as claimed in claim 1 further comprising the step of maintaining a film of an oxide of said metal or metalloid element on said exposed surface of said target during said step of exposing said target to said plasma.

References Cited (Backward Citations)

US3477936A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-07-17 1993-01-16 1993-07-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-07-17 1997-01-16 1997-07-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-07-17 2001-01-16 2001-07-18 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag