Patent US5656548A successfully refreshed from Google Patents.
US5656548A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming three dimensional processor using transferred thin film circuits
Assignee: Callahan Cellular LLC
•
Filing: 1995-09-19
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Granted: 1997-08-12
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Expires: 2015-09-19
Abstract
Abstract A multi-layered structure is fabricated in which a microprocessor is configured in different layers and interconnected vertically through insulating layers which separate each circuit layer of the structure. Each circuit layer can be fabricated in a separate wafer or thin film material and then transferred onto the layered structure and interconnected.
Inventors
- 👤 Paul M. Zavracky
- 👤 Matthew Zavracky
- 👤 Duy-Phach Vu
- 👤 Brenda Dingle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:24
CPC Classifications
H; H10; H10W; H10W90/00; H10W70/00; H10W70/099; H10W90/401; H10W72/00; H10W72/01; H10W90/20; H10W90/297; H10W90/701; H10W90/721; H10W90/722; Y; Y10; Y10S; Y10S148/00; Y10S148/164
Claims Analysis
Total Claims: 70
Claim 1
Independent Claim
102 words
A method of fabricating a data processor comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a second circuit of a data processor in a second layer of semiconductor material; bonding the second layer to the first layer with a bonding layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Claim 2
Independent Claim
102 words
A method of fabricating a data processor comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a second circuit of a data processor in a second layer of semiconductor material; bonding the second layer to the first layer with a bonding layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Claim 3
Dependent Claim
18 words
The method of claim 1 further comprising forming a controller in the first circuit or the second circuit.
Claim 4
Dependent Claim
18 words
The method of claim 1 further comprising forming a memory in the first circuit or the second circuit.
Claim 5
Dependent Claim
21 words
The method of claim 1 further comprising bonding the first circuit layer to the second circuit layer with a polymeric adhesive.
Claim 6
Dependent Claim
21 words
The method of claim 1 further comprising forming the second circuit in a thin film semiconductor layer on an insulating substrate.
Claim 7
Dependent Claim
24 words
The method of claim 5 further comprising transferring the thin film semiconductor layer and attached insulating layer onto the first layer of semiconductor layer.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein the first layer of semiconductor material comprises a bulk semiconductor wafer.
Claim 9
Dependent Claim
17 words
The method of claim 1 wherein the first circuit layer or the second circuit layer comprises silicon.
Claim 10
Dependent Claim
19 words
The method of claim 1 wherein the first circuit layer or the second circuit layer comprises a III-V material.
Claim 11
Dependent Claim
17 words
The method of claim 1 further comprising forming a third circuit layer over the second circuit layer.
Claim 12
Dependent Claim
21 words
The method of claim 1 further comprising forming a plurality of additional circuit layers over the first and second circuit layers.
Claim 13
Independent Claim
97 words
A method of fabricating a data processor comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a light emitting device in a second layer of semiconductor material; bonding the second layer to the first layer with a bonding layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the light emitting device with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the light emitting device.
Claim 14
Independent Claim
97 words
A method of fabricating a data processor comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a light emitting device in a second layer of semiconductor material; bonding the second layer to the first layer with a bonding layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the light emitting device with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the light emitting device.
Claim 15
Dependent Claim
14 words
The method of claim 12 further comprising forming a controller in the first circuit.
Claim 16
Dependent Claim
14 words
The method of claim 12 further comprising forming a memory in the first circuit.
Claim 17
Dependent Claim
20 words
The method of claim 12 further comprising bonding the first circuit layer to the second layer with a polymeric adhesive.
Claim 18
Dependent Claim
22 words
The method of claim 12 further comprising forming the light emitting device in a thin film semiconductor layer on an insulating substrate.
Claim 19
Dependent Claim
24 words
The method of claim 12 further comprising transferring the thin film semiconductor layer and attached insulating layer onto the first layer of semiconductor layer.
Claim 20
Dependent Claim
17 words
The method of claim 12 wherein the first layer of semiconductor material comprises a bulk semiconductor wafer.
Claim 21
Dependent Claim
12 words
The method of claim 12 wherein the first circuit layer comprises silicon.
Claim 22
Dependent Claim
19 words
The method of claim 12 wherein the first circuit layer or the second circuit layer comprises a III-V material.
Claim 23
Independent Claim
125 words
A method of fabricating a data processor comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a circuit routing layer and bonding the circuit routing layer to the first circuit layer; forming a second circuit of a data processor in a second layer of semiconductor material; bonding the second layer to the circuit routing layer with a bonding layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening and along the circuit routing layer such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Claim 24
Independent Claim
125 words
A method of fabricating a data processor comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a circuit routing layer and bonding the circuit routing layer to the first circuit layer; forming a second circuit of a data processor in a second layer of semiconductor material; bonding the second layer to the circuit routing layer with a bonding layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening and along the circuit routing layer such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Claim 25
Dependent Claim
18 words
The method of claim 21 further comprising forming a controller in the first circuit or the second circuit.
Claim 26
Dependent Claim
18 words
The method of claim 21 further comprising forming a memory in the first circuit or the second circuit.
Claim 27
Dependent Claim
21 words
The method of claim 21 further comprising bonding the first circuit layer to the second circuit layer with a polymeric adhesive.
Claim 28
Dependent Claim
19 words
The method of claim 21 further comprising tiling a plurality of second circuit layers over the circuit routing layer.
Claim 29
Dependent Claim
20 words
The method of claim 12 further comprising transferring the second layer to the first layer with a single transfer process.
Claim 30
Dependent Claim
20 words
The method of claim 12, further comprising transferring the second layer to the first layer with a double transfer process.
Claim 31
Dependent Claim
15 words
The method of claim 12 further comprising forming the layers with a silicon-on-insulator (SOI) film.
Claim 32
Dependent Claim
20 words
The method of claim 1 further comprising transferring the second layer to the first layer with a single transfer process.
Claim 33
Dependent Claim
20 words
The method of claim 1 further comprising transferring the second layer to the first layer with a double transfer process.
Claim 34
Dependent Claim
15 words
The method of claim 1 further comprising forming the layers with a silicon-on-insulator (SOI) film.
Claim 35
Independent Claim
91 words
A method of fabricating a data processor comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a second circuit of a data processor in a second layer of semiconductor material; bonding the second layer to the first layer with a bonding layer; curing said bonding layer; forming a hole through the bonding layer; and applying a metallization layer for electrically connecting the first circuit and the second circuit, the metallization layer flowing from the second layer through the hole to the first layer.
Claim 36
Independent Claim
91 words
A method of fabricating a data processor comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a second circuit of a data processor in a second layer of semiconductor material; bonding the second layer to the first layer with a bonding layer; curing said bonding layer; forming a hole through the bonding layer; and applying a metallization layer for electrically connecting the first circuit and the second circuit, the metallization layer flowing from the second layer through the hole to the first layer.
Claim 37
Dependent Claim
15 words
The method of claim 32 further comprising forming the layers with a silicon-on-insulator (SOI) film.
Claim 38
Dependent Claim
17 words
The method of claim 32 wherein the first circuit layer or the second circuit layer comprises silicon.
Claim 39
Dependent Claim
19 words
The method of claim 32 wherein the first circuit layer or the second circuit layer comprises a III-V material.
Claim 40
Dependent Claim
21 words
The method of claim 32 further comprising forming a plurality of additional circuit layers over the first and second circuit layers.
Claim 41
Dependent Claim
19 words
The method of claim 32 further comprising tiling a plurality of second circuit layers over the circuit routing layer.
Claim 42
Dependent Claim
21 words
The method of claim 32 further comprising forming the second circuit in a thin film semiconductor layer on an insulating substrate.
Claim 43
Dependent Claim
21 words
The method of claim 32 further comprising forming a plurality of additional circuit layers between the first and second circuit layers.
Claim 44
Independent Claim
111 words
A method of fabricating a data processor, comprising: forming a first circuit having a first data processor circuit in a first silicon layer of a first silicon-on-insulator structure; forming a second circuit having a second data processor circuit in a second silicon layer of a second silicon-on-insulator structure; bonding the second layer to the first layer with a bonding layer; forming openings in the bonding layer for interconnects; and thereafter connecting the first data processor circuit with the second data processor circuit with interconnects extending through the openings in the bonding layer to enable communication of data processor signals between the first data processor circuit and the second data processor circuit.
Claim 45
Independent Claim
111 words
A method of fabricating a data processor, comprising: forming a first circuit having a first data processor circuit in a first silicon layer of a first silicon-on-insulator structure; forming a second circuit having a second data processor circuit in a second silicon layer of a second silicon-on-insulator structure; bonding the second layer to the first layer with a bonding layer; forming openings in the bonding layer for interconnects; and thereafter connecting the first data processor circuit with the second data processor circuit with interconnects extending through the openings in the bonding layer to enable communication of data processor signals between the first data processor circuit and the second data processor circuit.
Claim 46
Dependent Claim
17 words
The method of claim 40 wherein the first circuit layer or the second circuit layer comprises silicon.
Claim 47
Dependent Claim
19 words
The method of claim 40 wherein the first circuit layer or the second circuit layer comprises a III-V material.
Claim 48
Dependent Claim
21 words
The method of claim 40 further comprising forming a plurality of additional circuit layers over the first and second circuit layers.
Claim 49
Dependent Claim
21 words
The method of claim 40 further comprising forming the second circuit in a thin film semiconductor layer on an insulating substrate.
Claim 50
Dependent Claim
21 words
The method of claim 40 further comprising forming a plurality of additional circuit layers between the first and second circuit layers.
Claim 51
Independent Claim
112 words
A method of fabricating a data processor, comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a second circuit of a data processor in a second layer of semiconductor material on a substrate; bonding the second layer to the first layer with a bonding layer; removing the substrate from the second layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Claim 52
Independent Claim
112 words
A method of fabricating a data processor, comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a second circuit of a data processor in a second layer of semiconductor material on a substrate; bonding the second layer to the first layer with a bonding layer; removing the substrate from the second layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Claim 53
Dependent Claim
15 words
The method of claim 46 further comprising forming the layers with a silicon-on-insulator (SOI) film.
Claim 54
Dependent Claim
17 words
The method of claim 46 wherein the first circuit layer or the second circuit layer comprises silicon.
Claim 55
Dependent Claim
19 words
The method of claim 46 wherein the first circuit layer or the second circuit layer comprises a III-V material.
Claim 56
Dependent Claim
21 words
The method of claim 46 further comprising forming a plurality of additional circuit layers over the first and second circuit layers.
Claim 57
Dependent Claim
19 words
The method of claim 46 further comprising tiling a plurality of second circuit layers over the circuit routing layer.
Claim 58
Dependent Claim
21 words
The method of claim 46 further comprising forming the second circuit in a thin film semiconductor layer on an insulating substrate.
Claim 59
Dependent Claim
21 words
The method of claim 46 further comprising forming a plurality of additional circuit layers between the first and second circuit layers.
Claim 60
Independent Claim
128 words
A method of fabricating a data processor, comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a second circuit of a data processor in a second layer of semiconductor material on a substrate; transferring the second layer to a transfer body; removing the substrate from the second layer; bonding the second layer to the first layer with a bonding layer; removing the transfer body from the second layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Claim 61
Independent Claim
128 words
A method of fabricating a data processor, comprising: forming a first circuit of a data processor in a first layer of semiconductor material; forming a second circuit of a data processor in a second layer of semiconductor material on a substrate; transferring the second layer to a transfer body; removing the substrate from the second layer; bonding the second layer to the first layer with a bonding layer; removing the transfer body from the second layer; forming an opening in the bonding layer for an interconnect; and connecting the first data processor circuit with the second data processor circuit with an interconnect extending through the bonding layer opening such that data processor signals can be conducted between the first data processor circuit and the second data processor circuit.
Claim 62
Dependent Claim
15 words
The method of claim 54 further comprising forming the layers with a silicon-on-insulator (SOI) film.
Claim 63
Dependent Claim
17 words
The method of claim 54 wherein the first circuit layer or the second circuit layer comprises silicon.
Claim 64
Dependent Claim
19 words
The method of claim 54 wherein the first circuit layer or the second circuit layer comprises a III-V material.
Claim 65
Dependent Claim
21 words
The method of claim 54 further comprising forming a plurality of additional circuit layers over the first and second circuit layers.
Claim 66
Dependent Claim
19 words
The method of claim 54 further comprising tiling a plurality of second circuit layers over the circuit routing layer.
Claim 67
Dependent Claim
21 words
The method of claim 54 further comprising forming the second circuit in a thin film semiconductor layer on an insulating substrate.
Claim 68
Dependent Claim
21 words
The method of claim 54 further comprising forming a plurality of additional circuit layers between the first and second circuit layers.
Claim 69
Dependent Claim
17 words
The method of claim 12 further comprising forming a third circuit layer over the second circuit layer.
Claim 70
Dependent Claim
21 words
The method of claim 12 further comprising forming a plurality of additional circuit layers between the first and second circuit layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-11 | 2009-02-10 | 2009-08-12 | $7700.00 | Window Closed / Lapsed |