US5138437A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device in which integrated circuit units having different functions are stacked in three dimensional manner
Assignee: Mitsubishi Electric Corp
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Filing: 1990-09-24
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Granted: 1992-08-11
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Expires: 2010-09-24
Abstract
Abstract A semiconductor integrated circuit device comprises a general purpose unit having a general purpose function and a specific unit for a specific use of the semiconductor integrated circuit device. In addition, the semiconductor integrated circuit device has structure in which a plurality of layers each having an integrated circuit formed therein are stacked in a three-dimensional manner. Specific unit layers are formed on the surface of the layer having the general purpose unit formed therein by different manufacturing processes.
Inventors
- 👤 Toshio Kumamoto
- 👤 Shinichi Nakagawa
- 👤 Masao Nakaya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:37
CPC Classifications
H; H10; H10D; H10D88/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
137 words
A semiconductor integrated circuit device comprising a stacked structure formed on a single substrate including a lower layer and an upper layer on said single substrate and separated from each other by an insulation layer, said lower layer comprising a general purpose integrated circuit having a user invariable circuit structure, said upper layer comprising an integrated circuit having a user variable circuit structure, wherein any user variable circuit structure is only comprised by said upper layer, said lower layer and said upper layer including connection nodes at predetermined corresponding locations, said insulation layer including holes at predetermined locations corresponding to said connection nodes, and means for electrically connecting corresponding connection nodes respectively of said lower layer and said upper layer through said corresponding holes in said insulation layer, wherein said upper layer includes a structured gate array.
Claim 2
Dependent Claim
137 words
A semiconductor integrated circuit device comprising a stacked structure formed on a single substrate including a lower layer and an upper layer on said single substrate and separated from each other by an insulation layer, said lower layer comprising a general purpose integrated circuit having a user invariable circuit structure, said upper layer comprising an integrated circuit having a user variable circuit structure, wherein any user variable circuit structure is only comprised by said upper layer, said lower layer and said upper layer including connection nodes at predetermined corresponding locations, said insulation layer including holes at predetermined locations corresponding to said connection nodes, and means for electrically connecting corresponding connection nodes respectively of said lower layer and said upper layer through said corresponding holes in said insulation layer, wherein said upper layer includes a structured gate array.
Claim 3
Dependent Claim
147 words
A semiconductor integrated circuit device comprising a stacked structure formed on a single substrate including a lower layer and an upper layer on said single substrate and separated from each other by an insulation layer, said lower layer comprising a general purpose integrated circuit having a user invariable circuit structure, said upper layer comprising an integrated circuit having a user variable circuit structure, wherein any user variable circuit structure is only comprised by said upper layer, said lower layer and said upper layer including connection nodes at predetermined corresponding location, said insulation layer including holes at predetermined locations corresponding to said connection nodes, and means for electrically connecting corresponding connection nodes respectively of said lower layer and said upper layer through said corresponding holes in said insulation layer, wherein said lower layer and said upper layer are electrically connected through bonding pads provided in the lower layer.
Claim 4
Dependent Claim
147 words
A semiconductor integrated circuit device comprising a stacked structure formed on a single substrate including a lower layer and an upper layer on said single substrate and separated from each other by an insulation layer, said lower layer comprising a general purpose integrated circuit having a user invariable circuit structure, said upper layer comprising an integrated circuit having a user variable circuit structure, wherein any user variable circuit structure is only comprised by said upper layer, said lower layer and said upper layer including connection nodes at predetermined corresponding location, said insulation layer including holes at predetermined locations corresponding to said connection nodes, and means for electrically connecting corresponding connection nodes respectively of said lower layer and said upper layer through said corresponding holes in said insulation layer, wherein said lower layer and said upper layer are electrically connected through bonding pads provided in the lower layer.
Claim 5
Dependent Claim
28 words
The semiconductor integrated circuit device according to claim 1, wherein said lower layer and said upper layer are electrically connected through bonding pads provided in the first layer.
References Cited (Backward Citations)
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US4288841A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-11 | 1996-02-10 | 1996-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-11 | 2000-02-10 | 2000-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-11 | 2004-02-10 | 2004-08-11 | $7700.00 | Window Closed / Lapsed |