Assembly in a single case of a main power-switching semiconductor component and a destorage diode

Claim 1

An assembly in a single case comprising: a main power-switching semiconductor component of the Darlington or amplifying gate thyristor type and having at least first and second metallizations on one face thereof with said first metallization being centrally located and said second metallization extending around said first metallization; and a three terminal auxiliary component defining at least a first resistance and a destorage diode in series with a second resistance and having in monolithic form a substrate of a first type of conductivity, a uniform layer of said first type of conductivity and with a heavy doping level on the rear face of said substrate, a metallization coating said uniform layer on said rear face, a first layer of the second type of conductivity with a high doping level on the front face of said substrate at the periphery thereof, a second layer of the first type of conductivity with a high doping level on the front face of said substrate centrally thereof, said first layer extending around said second layer, the surfaces occupied by said first and second layers being substantially complementary, first and second metallizations respectively disposed on said first and second layers so that said first resistance is formed between said rear face metallization and said second metallization and said diode in series with said first resistance is formed between said first and second metallizations; said first and second metallizations of said main component being brought into electrical contact with said first and second metallization of said auxiliary component, respectively, by the application of pressure.