Multi-terminal semiconductor devices having pressure contacts for main and gate electrodes

Claim 1

A multi-terminal semiconductor device comprising a housing having a base portion and encapsulating a semiconductor element mounted on said base portion, said housing supporting first, second and third main current terminals, said semiconductor element including first, second and third zones, each of distinct conductivity type as compared with the adjacent portion of said element, said first zone extending inwardly of the element from one of two opposite faces of said element, said one face being mounted in electrical-conducting and heat-conducting relationship with said base portion and said base portion forming said first terminal, said seCond zone and said third zone extending inwardly from the other of said opposite surfaces, and said third zone being located outwardly of the outer periphery of said second zone, said device further including second contact means within said housing for making electrical connection between said second zone and said second terminal and third contact means for making electrical connection between said third zone and said third terminal of the device, said third contact means includes a central portion and a peripheral flange portion depending from said central portion, the free end of said flange portion remote from the central portion engaging said third zone, main compression loading means acting against said housing to urge an electrical contact of said second contact means against said second zone, an insulator, and an auxiliary compression loading means, disposed within the outer periphery of said main compression loading means in symmetrical relationship thereto, acting between said insulator and an electrical contact of said third contact means to urge said electrical contact of said third contact means against said third zone.