US5641694A
Expired / Lapsed
US
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Method of fabricating vertical epitaxial SOI transistor
Assignee: International Business Machines Corp
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Filing: 1994-12-22
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Granted: 1997-06-24
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Expires: 2014-12-22
Abstract
Abstract Vertical epitaxial SOI transistors and memory cells are disclosed. The devices are formed completely within a substrate trench and have a bulk channel epitaxially grown on an exposed surface of the substrate within the trench. The bulk channel is disposed proximate to a transistor gate electrode such that an inversion layer is formed therein when the gate electrode is appropriately biased. Back biasing of the bulk region is accomplished through the substrate. In the transistor embodiment, a first node diffusion and a second node diffusion are disposed at opposite ends of the bulk channel. In a memory cell configuration the access transistor is disposed above a trench storage node, which electrically connects with the transistor's second node diffusion. Arrays of the trench transistors and trench memory cells are also described. Further, fabrication methods for the various structures disclosed are presented. A novel wiring approach to construction of bit lines in a cell array is also set forth.
Inventors
- 👤 Donald McAlpine Kenney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:21
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0383; H10B12/30; H10B12/39; H10B12/395; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
325 words
A method for forming a vertical epitaxial SOI transistor in a composite substrate having a buried contact therein, said method comprising the steps of: (a) forming a trench in said composite substrate, said trench extending from an upper surface of said substrate and terminating within said buried contact, said trench having an exposed sidewall, and an upper portion and a lower portion; and (b) fabricating a transistor to reside entirely within the trench formed in said step (a) by (i) forming a lower node of said transistor in said lower portion of said trench, said lower node being formed in electrical contact with said buried contact region within said composite substrate, (ii) selectively growing epitaxial material on the exposed trench sidewall in the upper portion of said trench such that the direction of epitaxial growth is laterally inward towards a center region of said trench, said epitaxial material grown on the exposed trench sidewall of the upper portion of the trench comprising in part a bulk region of said transistor, said epitaxially grown bulk region being electrically connected to said substrate for receiving a back biasing potential therefrom, (iii) forming an upper node of said transistor within an upper end of said epitaxially grown material, (iv) forming a gate electrode of said transistor in a center region of said upper trench portion proximate said bulk region such that when said gate electrode is appropriately biased an inversion layer forms in said bulk region near said gate electrode, said inversion layer extending between said lower node and said upper node, and wherein said selective epitaxial growing of said step (b)(ii) includes continuing said selective epitaxial growth such that epitaxial material overflows said substrate trench, and thereafter planing, patterning and etching said epitaxially grown material such that a center region opening is defined within the upper portion of said substrate trench, said center region opening being sized to receive said gate electrode formed in said step (b)(iv).
Claim 2
Independent Claim
325 words
A method for forming a vertical epitaxial SOI transistor in a composite substrate having a buried contact therein, said method comprising the steps of: (a) forming a trench in said composite substrate, said trench extending from an upper surface of said substrate and terminating within said buried contact, said trench having an exposed sidewall, and an upper portion and a lower portion; and (b) fabricating a transistor to reside entirely within the trench formed in said step (a) by (i) forming a lower node of said transistor in said lower portion of said trench, said lower node being formed in electrical contact with said buried contact region within said composite substrate, (ii) selectively growing epitaxial material on the exposed trench sidewall in the upper portion of said trench such that the direction of epitaxial growth is laterally inward towards a center region of said trench, said epitaxial material grown on the exposed trench sidewall of the upper portion of the trench comprising in part a bulk region of said transistor, said epitaxially grown bulk region being electrically connected to said substrate for receiving a back biasing potential therefrom, (iii) forming an upper node of said transistor within an upper end of said epitaxially grown material, (iv) forming a gate electrode of said transistor in a center region of said upper trench portion proximate said bulk region such that when said gate electrode is appropriately biased an inversion layer forms in said bulk region near said gate electrode, said inversion layer extending between said lower node and said upper node, and wherein said selective epitaxial growing of said step (b)(ii) includes continuing said selective epitaxial growth such that epitaxial material overflows said substrate trench, and thereafter planing, patterning and etching said epitaxially grown material such that a center region opening is defined within the upper portion of said substrate trench, said center region opening being sized to receive said gate electrode formed in said step (b)(iv).
Claim 3
Dependent Claim
29 words
The transistor forming method of claim 1, wherein said lower transistor node is formed by selectively growing epitaxial material only on an exposed portion of said buried contact region.
Claim 4
Dependent Claim
43 words
The transistor forming method of claim 2, wherein said epitaxial material grown in said step (b)(ii) comprises monocrystalline epitaxial material, and wherein said selectively growing of said lower node formation and said bulk region epitaxial growth formation occur substantially simultaneously within said trench.
Claim 5
Dependent Claim
50 words
The transistor forming method of claim 3, wherein said transistor fabricating step (b) includes forming a dielectric isolation region adjacent said trench substrate sidewall so as to contain said lower node formed in said step (b)(i) within said substrate trench and isolate said lower node from contact with said substrate.
Claim 6
Dependent Claim
32 words
The transistor forming method of claim 3, wherein said upper node forming step (b)(iii) includes diffusing a dopant into said upper end of said epitaxially grown monocrystalline material of said step (b)(ii).
Claim 7
Dependent Claim
36 words
The transistor forming method of claim 1, wherein upon completion of said step (b)(ii) a middle region of said upper trench portion remains open for receiving said gate electrode to be formed in said step (b)(iv).
Claim 8
Dependent Claim
45 words
A method for forming a plurality of vertical epitaxial SOI transistors in a composite substrate so as to define an array of transistors, said method comprising simultaneously executing the method of claim 1 for each of a plurality of vertical transistors, thereby defining said array.
Claim 9
Independent Claim
155 words
A method for forming a uniform epitaxial material on an exposed sidewall of a trench formed in a substrate, said method comprising: (a) growing epitaxial material on the exposed trench sidewall, wherein the direction of epitaxial growth is laterally inward towards a center region of the trench, said growing of epitaxial material continuing until the epitaxial material overflows said substrate trench; (b) planarizing the epitaxial material above an upper surface of the substrate; (c) forming a recess within the epitaxial material; (d) forming a sidewall spacer within the recess formed within the epitaxial material such that only a center region of the epitaxial material grown within the trench remains exposed within the recess; and (e) etching said exposed center region of epitaxial material from the trench, wherein an epitaxial layer remains on the trench sidewall that is uniform notwithstanding different sidewall crystal orientations of the substrate, said epitaxial layer being disposed beneath said sidewall spacer.
Claim 10
Independent Claim
155 words
A method for forming a uniform epitaxial material on an exposed sidewall of a trench formed in a substrate, said method comprising: (a) growing epitaxial material on the exposed trench sidewall, wherein the direction of epitaxial growth is laterally inward towards a center region of the trench, said growing of epitaxial material continuing until the epitaxial material overflows said substrate trench; (b) planarizing the epitaxial material above an upper surface of the substrate; (c) forming a recess within the epitaxial material; (d) forming a sidewall spacer within the recess formed within the epitaxial material such that only a center region of the epitaxial material grown within the trench remains exposed within the recess; and (e) etching said exposed center region of epitaxial material from the trench, wherein an epitaxial layer remains on the trench sidewall that is uniform notwithstanding different sidewall crystal orientations of the substrate, said epitaxial layer being disposed beneath said sidewall spacer.
Claim 11
Dependent Claim
45 words
The method of claim 8, wherein the exposed sidewall of the trench formed in the substrate comprises a vertical sidewall, and wherein the method comprises forming the uniform epitaxial layer on the vertical sidewall such that the epitaxial layer has uniformity in a vertical direction.
Claim 12
Dependent Claim
50 words
The method of claim 8, wherein said sidewall spacer forming step (d) produces a sidewall spacer of uniform thickness about said trench such that said epitaxial layer remaining on the trench sidewall beneath said sidewall spacer is horizontally uniform within the trench notwithstanding different sidewall crystal orientations of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-06-23 | 2000-12-23 | 2001-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-23 | 2004-12-23 | 2005-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-23 | 2008-12-23 | 2009-06-24 | $7700.00 | Window Closed / Lapsed |