US4830978A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dram cell and method
Assignee: Texas Instruments Inc
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Filing: 1987-03-16
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Granted: 1989-05-16
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Expires: 2007-03-16
Abstract
Abstract The described embodiments of the present invention provide structures, and a method for fabricating those structures, which include a memory cell formed within a single trench. A trench is formed in the surface of a semiconductor substrate. The bottom portion of the trench is filled with polycrystalline silicon to form one plate of a storage capacitor. The substrate serves as the other plate of the capacitor. The remaining portion of the trench is then filled with an insulating material such as silicon dioxide. A pattern is then etched into the silicon dioxide which opens a portion of the sidewall and the top portion of the trench down to the polycrystalline capacitor plate. A contact is then formed between the polycrystalline capacitor plate and the substrate. Dopant atoms diffuse through the contact to form a source region on a sidewall of the trench. A gate insulator is formed by oxidation and a drain is formed at the surface of the trench adjacent to the mouth of the trench. Conductive material is then formed inside the open portion of the upper portion of the trench thereby forming a transistor connecting the upper plate of the storage capacitor to a drain region on the surface of the semiconductor substrate.
Inventors
- 👤 Clarence W. Teng
- 👤 Robert R. Doering
- 👤 Ashwin H. Shah
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:23
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0383; H10B12/05; H10B12/053; H10B12/30; H10B12/34; H10B12/37; H10B12/39; H10B12/395; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/512; H10D64/513; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/17; H10P32/171; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/076
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
153 words
A method for forming a memory cell comprising: forming a trench in a substrate; coating the surfaces of said trench with a dielectric material; filling said trench with a conductive material; etching said conductive material back to a level within said trench; filling the remainder of said trench with insulating material; forming a doped drain region at the mouth of said trench; providing an etch mask which exposes a portion of the edge of said trench; etching into said insulating material down to said conductive material using an anisotropic etching process; forming a source region in said substrate having electrical contact to said conductive material; forming a gate insulating layer on the portion of the sidewall of said trench exposed by said etching into said insulating material; and filling the opening thus provided with a gate conductive material to provide a gate which controls conduction between said source region and said drain region.
Claim 2
Independent Claim
153 words
A method for forming a memory cell comprising: forming a trench in a substrate; coating the surfaces of said trench with a dielectric material; filling said trench with a conductive material; etching said conductive material back to a level within said trench; filling the remainder of said trench with insulating material; forming a doped drain region at the mouth of said trench; providing an etch mask which exposes a portion of the edge of said trench; etching into said insulating material down to said conductive material using an anisotropic etching process; forming a source region in said substrate having electrical contact to said conductive material; forming a gate insulating layer on the portion of the sidewall of said trench exposed by said etching into said insulating material; and filling the opening thus provided with a gate conductive material to provide a gate which controls conduction between said source region and said drain region.
Claim 3
Dependent Claim
28 words
The method of claim 1 wherein said trench is in the form of a right rectangular parallelepiped having its major axis perpendicular to a surface of said substrate.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein said trench has a depth into said substrate of 8 μ.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein said conductive material is polycrystalline silicon.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein said conductive material includes dopant atoms.
Claim 7
Dependent Claim
81 words
The method of claim 5 wherein said source is formed by: removing a portion of said dielectric material between said conductive layer and said substrate; filling the area left vacant by the removed portion of said dielectric layer with inserted conductive material through which said dopant ions diffuse under the application of heat; and heating the entire structure to diffuse said dopant ions from said conductive material through said inserted conductive material and thus provide said source region in said substrate.
Claim 8
Independent Claim
158 words
A method for forming a memory cell comprising: forming a trench in a substrate; coating the surfaces of said trench with a dielectric material; filling said trench with a conductive material; providing an etch mask which exposes a portion of the edge of said trench; filling the remainder of said trench exposed by said etch mask with insulating material; removing said etch mask; forming a doped drain region at the mouth of said trench; etching said conductive material which was covered by said etch mask back to a level within said trench; forming a source region in said substrate having electrical contact to said conductive material; forming a gate insulating layer on the portion of the sidewall of said trench exposed by said etching of said covered portion of said conductive material; and filling the opening thus provided with a gate conductive material to provide a gate which controls conduction between said source region and said drain region.
Claim 9
Independent Claim
158 words
A method for forming a memory cell comprising: forming a trench in a substrate; coating the surfaces of said trench with a dielectric material; filling said trench with a conductive material; providing an etch mask which exposes a portion of the edge of said trench; filling the remainder of said trench exposed by said etch mask with insulating material; removing said etch mask; forming a doped drain region at the mouth of said trench; etching said conductive material which was covered by said etch mask back to a level within said trench; forming a source region in said substrate having electrical contact to said conductive material; forming a gate insulating layer on the portion of the sidewall of said trench exposed by said etching of said covered portion of said conductive material; and filling the opening thus provided with a gate conductive material to provide a gate which controls conduction between said source region and said drain region.
Claim 10
Dependent Claim
28 words
The method of claim 7 wherein said trench is in the form of a right rectangular parallelepiped having its major axis perpandicular to a surface of said substrate.
Claim 11
Dependent Claim
17 words
The method of claim 7 wherein said trench has a depth into said substrate of 8 μ.
Claim 12
Dependent Claim
12 words
The method of claim 7 wherein said conductive material is polycrystalline silicon.
Claim 13
Dependent Claim
12 words
The method of claim 7 wherein said conductive material includes dopant atoms.
Claim 14
Dependent Claim
81 words
The method of claim 11 wherein said source is formed by: removing a portion of said dielectric material between said conductive layer and said substrate; filling the area left vacant by the removed portion of said dielectric layer with inserted conductive material through which said dopant ions diffuse under the application of heat; and heating the entire structure to diffuse said dopant ions from said conductive material through said inserted conductive material and thus provide said source region in said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-15 | 1992-11-14 | 1993-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-15 | 1996-11-14 | 1997-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-15 | 2000-11-14 | 2001-05-16 | $7700.00 | Window Closed / Lapsed |