Patent US5624864A successfully refreshed from Google Patents.
US5624864A
Expired / Lapsed
US
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Semiconductor device having capacitor and manufacturing method thereof
Assignee: Panasonic Holdings Corp
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Filing: 1994-08-04
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Granted: 1997-04-29
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Expires: 2014-08-04
Abstract
Abstract A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm 3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10 21 atoms/cm 3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
Inventors
- 👤 Koji Arita
- 👤 Eiji Fujii
- 👤 Yasuhiro Shimada
- 👤 Yasuhiro Uemoto
- 👤 Toru Nasu
- 👤 Akihiro Matsuda
- 👤 Yoshihisa Nagano
- 👤 Atsuo Inoue
- 👤 Taketoshi Matsuura
- 👤 Tatsuo Otsuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:10
CPC Classifications
H; H10; H10D; H10D84/00; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B51/00; H10B51/30; H10B53/00; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10D1/696; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
181 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a capacitor comprising a bottom electrode composed of a conductive layer, a capacitor dielectric layer composed of one of a ferroelectric layer and a high dielectric layer formed on the bottom electrode, and a top electrode composed of a conductive layer formed on the capacitor dielectric layer, on an insulating layer of a semiconductor substrate in which an integrated circuit is fabricated; forming an interlayer insulating layer by covering the capacitor; forming contact holes reaching the integrated circuit, and top electrode and bottom electrode of the capacitor, through the insulating layer and interlayer insulating layer; forming interconnections to be electrically connected with the integrated circuit and capacitor through the contact holes; forming a passivation layer having a silicon nitride layer with a hydrogen atom content of 10 21 atoms/cm 3 or less, but greater than zero, by covering the interconnections, wherein the silicon nitride layer is formed by ion beam sputtering deposition; and forming a silicon nitride layer on said passivation layer by a plasma chemical vapor deposition method.
Claim 2
Independent Claim
181 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a capacitor comprising a bottom electrode composed of a conductive layer, a capacitor dielectric layer composed of one of a ferroelectric layer and a high dielectric layer formed on the bottom electrode, and a top electrode composed of a conductive layer formed on the capacitor dielectric layer, on an insulating layer of a semiconductor substrate in which an integrated circuit is fabricated; forming an interlayer insulating layer by covering the capacitor; forming contact holes reaching the integrated circuit, and top electrode and bottom electrode of the capacitor, through the insulating layer and interlayer insulating layer; forming interconnections to be electrically connected with the integrated circuit and capacitor through the contact holes; forming a passivation layer having a silicon nitride layer with a hydrogen atom content of 10 21 atoms/cm 3 or less, but greater than zero, by covering the interconnections, wherein the silicon nitride layer is formed by ion beam sputtering deposition; and forming a silicon nitride layer on said passivation layer by a plasma chemical vapor deposition method.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-28 | 2000-10-28 | 2001-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-28 | 2004-10-28 | 2005-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-28 | 2008-10-28 | 2009-04-29 | $7700.00 | Window Closed / Lapsed |