Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
30 words
A method of manufacturing a semi-conductor device, comprising the steps of forming a ferro-electric film (110) in the device, and treating the film (110) to improve the stoichiometric composition thereof.
Claim 2
Independent Claim
30 words
A method of manufacturing a semi-conductor device, comprising the steps of forming a ferro-electric film (110) in the device, and treating the film (110) to improve the stoichiometric composition thereof.
Claim 3
Dependent Claim
24 words
A method as claimed in claim 1, wherein the treatment comprises doping the film (110) by ion implantation after formation of the film (110).
Claim 4
Dependent Claim
15 words
A method as claimed in claim 2, wherein the doped film (110) is thereafter annealed.
Claim 5
Dependent Claim
14 words
A method as claimed in claim 3, wherein the anneal temperature is above 500°C.
Claim 6
Dependent Claim
15 words
A method as claimed in claim 3, wherein annealing is performed by rapid thermal anneal.
Claim 7
Dependent Claim
18 words
A method as claimed in claim 4 or 5, wherein annealing is performed in an atmosphere containing ozone.
Claim 8
Dependent Claim
34 words
A method as claimed in claim 1 wherein the film (110) is formed by sputtering, and the treatment comprises using a sputtering atmosphere containing an element for improving the stoichiometric composition of the film.
Claim 9
Dependent Claim
25 words
A method as claimed in claim 1, wherein the film (110) is formed by sputtering, and the treatment comprises using a sputtering atmosphere containing ozone.
Claim 10
Dependent Claim
29 words
A method as claimed in claim 1, wherein the film (110) is formed by sputtering, and the treatment comprises using a sputtering atmosphere containing lead or a lead compound.
Claim 11
Dependent Claim
20 words
A method as claimed in claim 9 wherein the sputtering atmosphere contains at least one of PbCl₄, Pb(C₂H₅)₄ and Pb₂O(OH)₂.
Claim 12
Dependent Claim
25 words
A method as claimed in claim 1, wherein the film (110) is formed by sputtering, and the treatment comprises annealing in an atmosphere containing ozone.
Claim 13
Independent Claim
25 words
A method as claimed in any preceding claim, wherein the main component of the ferro-electric film is at least one of PbTiO₃, PZT(PbTiO₃/PbZrO₃) and PLZT(La/PbTiO₃/PbZrO₃).