EP0513894A2
Expired / Lapsed
EP
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Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor
Assignee: Koninklijke Philips NV
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Filing: 1992-05-04
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Granted: —
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Expires: 2012-05-04
Abstract
Abstract A method of manufacturing a semiconductor device whereby a capacitor (2) is provided on a surface (10) of a semiconductor body (3) with a semiconductor element (1) in that a lower electrode (11), an oxidic ferroelectric dielectric (12) and an upper electrode (13) are provided in that order, the upper electrode not covering an edge of the dielectric, after which an insulating layer (14) with superimposed metal conductor tracks is provided. According to the invention, the edge of the dielectric (12) not covered by the upper electrode (13) is coated with a coating layer (14, 20, or 30) practically imperviable to hydrogen, after which the device is heated in a hydrogen-containing atmosphere. Heating in a hydrogen atmosphere neutralizes dangling bonds which arise during deposition of the conductor tracks on the insulating layer, while the coating layer protects the dielectric from attacks by hydrogen. The semiconductor device then has a shorter access time.
Inventors
- 👤 Robertus Adrianus Maria Wolters
- 👤 Poul Kjaerby Larsen
- 👤 Mathieu Joseph Emanuel Ulenaers
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 11:48
CPC Classifications
H; H10; H10D; H10D84/00; H10B; H10B53/00; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D64/00; H10D64/60; H10D64/66; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
107 words
A method of manufacturing a semiconductor device whereby a capacitor is provided on a surface of a semiconductor body comprising a semiconductor element in that consecutively a lower electrode, an oxidic ferroelectric dielectric, and an upper electrode are provided in such a way that the upper electrode does not cover an edge of the dielectric, after which an insulating layer with superimposed metal conductor tracks is provided, characterized in that the edge of the upper electrode not covered by the dielectric is covered with a coating layer which is practically imperviable to hydrogen, and in that then the device is heated in an atmosphere which contains hydrogen.
Claim 2
Dependent Claim
21 words
A method as claimed in Claim 1, characterized in that the coating layer is provided over substantially the entire upper electrode.
Claim 3
Dependent Claim
22 words
A method as claimed in Claim 1 or 2, characterized in that a silicon nitride layer is provided as the coating layer.
Claim 4
Dependent Claim
29 words
A method as claimed in Claim 3, characterized in that a layer of silicon oxide is provided between the silicon nitride layer and the surface of the semiconductor body.
Claim 5
Dependent Claim
21 words
A method as claimed in Claim 1 or 2, characterized in that a hydrogen-absorbing layer is provided as the coating layer.
Claim 6
Dependent Claim
17 words
A method as claimed in Claim 5, characterized in that palladium is provided as the hydrogen-absorbing layer.
Claim 7
Dependent Claim
29 words
A method as claimed in Claim 5 or 6, characterized in that an insulating auxiliary layer is provided between the hydrogen-absorbing layer and the surface of the semiconductor body.
Claim 8
Dependent Claim
38 words
A method as claimed in Claim 7, characterized in that a silicon nitride layer is provided as the auxiliary layer by means of a plasma enhanced deposition process from the gas phase (Plasma Enhanced Chemical Vapour Deposition, PECVD).
Claim 9
Dependent Claim
76 words
A semiconductor device comprising a semiconductor body with a semiconductor element and a surface on which is present a capacitor with a lower electrode, an oxidic ferroelectric dielectric, and an upper electrode which does not cover an edge of the dielectric, an insulating layer with superimposed metal conductor tracks being provided on the semiconductor body, characterized in that a coating layer which is practically imperviable to hydrogen is provided at the area of the said edge.
Claim 10
Dependent Claim
22 words
A semiconductor device as claimed in Claim 1, characterized in that the coating layer is provided over substantially the entire upper electrode.
Claim 11
Dependent Claim
23 words
A semiconductor device as claimed in Claim 1 or 2, characterized in that a silicon nitride layer is provided as the coating layer.
Claim 12
Dependent Claim
30 words
A semiconductor device as claimed in Claim 3, characterized in that a layer of silicon oxide is provided between the silicon nitride layer and the surface of the semiconductor body.
Claim 13
Dependent Claim
22 words
A semiconductor device as claimed in Claim 1 or 2, characterized in that a hydrogen-absorbing layer is provided as the coating layer.
Claim 14
Dependent Claim
18 words
A semiconductor device as claimed in Claim 5, characterized in that palladium is provided as the hydrogen-absorbing layer.
Claim 15
Dependent Claim
30 words
A semiconductor device as claimed in Claim 5 or 6, characterized in that an insulating auxiliary layer is provided between the hydrogen-absorbing layer and the surface of the semiconductor body.
Claim 16
Dependent Claim
39 words
A semiconductor device as claimed in Claim 7, characterized in that a silicon nitride layer is provided as the auxiliary layer by means of a plasma enhanced deposition process from the gas phase (Plasma Enhanced Chemical Vapour Deposition, PECVD).
References Cited (Backward Citations)
No citation records indexed.
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