EP0514547A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
SEMICONDUCTOR MEMORY HAVING A FERROELECTRIC CAPACITOR AND A TiON BARRIER FILM
Assignee: Ramtron International Corp
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Filing: 1991-08-20
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Granted: —
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Expires: 2011-08-20
Abstract
Abstract A semiconductor device having a ferroelectric or polycrystalline silicon gate, wherein a humidity-resistant hydrogen-barrier film such as a TiN film or a TiON film is formed on the ferroelectric or polycrystalline silicon gate by the film-forming method which does not release hydrogen.
Inventors
- 👤 Kazuhiro Takenaka
- 👤 Akira Fujisawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 12:10
CPC Classifications
H; H10; H10B; H10B53/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10W20/0698; H10W20/071; H10W20/074; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/43; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5524; H10W72/59; H10W72/90; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
47 words
A semiconductor device comprising a ferroelectric film or a polycrystalline silicon gate as an element, characterized by comprising a humidity-resistant hydrogen barrier film made by a hydrogen non-emission film forming method on the upper portion of said element within a range of at least covering said element.
Claim 2
Dependent Claim
24 words
A semiconductor device as claimed in claim 1, wherein the upper portion of said hydrogen barrier film comprises a corrosion protective film covering thereof.
Claim 3
Dependent Claim
18 words
A semiconductor device as claimed in claim 1 or 2, wherein said barrier film is a TiN film.
Claim 4
Dependent Claim
19 words
A semiconductor device as claimed in claim 1 or 2, wherein said hydrogen barrier film is a TiON film.
Claim 5
Dependent Claim
22 words
A semiconductor device as claimed in any one of claims 2 to 4, wherein said corrosion protective film is an SiN film.
Claim 6
Dependent Claim
20 words
A semiconductor memory with the use of the semiconductor device as claimed in any one of claims 1 to 5.
Claim 7
Dependent Claim
22 words
A CMOS semiconductor integrated circuit with the use of the semiconductor device as claimed in any one of claims 1 to 5.
Claim 8
Independent Claim
73 words
A method of manufacturing a semiconductor device comprising a ferroelectric film or polycrystalline silicon gate as an element, comprising the steps of forming an interlayer insulating film by a hydrogen non-emission film forming method after the ferroelectric film or polycrystalline silicon gate is formed and forming a humidity-resistant hydrogen barrier film by a hydrogen non-emission film forming method at the upper portion of said element within a range covering at least said element.
Claim 9
Dependent Claim
36 words
A method of manufacturing a semiconductor device as claimed in claim 8, wherein the method comprises the step of covering a corrosion protective film on said hydrogen barrier film after said hydrogen barrier film is formed.
References Cited (Backward Citations)
No citation records indexed.
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