Method of manufacturing semiconductor device

Claim 1

A process for forming a semiconductor device in which a capacitor element having as a basic layer a ferroelectric layer is formed, characterized in comprising the steps of: forming a connecting hole for connecting a diffusion layer with high impurity concentration of a semiconductor substrate to either of the electrodes formed as to sandwich said ferroelectric layer therebetween; forming a thin layer which is intended to form said electrode on the surface of said diffusion layer with a high impurity concentration of said semiconductor device; forming another thin layer aimed to form said ferroelectric layer on the surface of said thin layer intended to form said electrode; forming a mask layer on said thin ferroelectric thin film, and leaving a portion of the mask layer on a region where a capacitor element is to be formed, by using a patterning technique; and removing simultaneously said another thin layer for said ferroelectric layer and said thin layer for said electrode at regions where no capacitor element is formed, by using an etching technique while using said residual mask layer.