US5488014A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor
Assignee: Mitsubishi Electric Corp
•
Filing: 1994-03-15
•
Granted: 1996-01-30
•
Expires: 2014-03-15
Abstract
Abstract A surface of a first aluminum interconnection layer in a connection hole is exposed to a plasma of oxygen or fluorine-containing gas during the forming step of the connection hole. In order to remove the thin deterioration layer which forms as a result, sputter etching is effected by an argon ion. There are residual particles of the oxide and fluoride of aluminum on the surface of the first aluminum interconnection layer. A titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum layer through the through hole. A titanium compound layer is formed on the titanium layer. A second aluminum layer is formed on the titanium compound layer. A heat treatment is effected to decompose the residual particles and to form an intermetallic compound (TiAl 3 ).
Inventors
- 👤 Shigeru Harada
- 👤 Junichi Arima
- 👤 Noriaki Fujiki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/42
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
142 words
A method for manufacturing an interconnection structure of a semiconductor integrated circuit device comprising the steps of: forming a first interconnection layer including aluminum on a main surface of a semiconductor substrate; forming an insulating layer on said first interconnection layer; selectively removing said insulating layer to form a through hole for exposing a surface of said first interconnection layer; forming a titanium layer on said insulting layer, said titanium layer being in contact with the surface of said first interconnection layer through said through hole to form an interface between said titanium layer and said first interconnection layer; forming a titanium compound layer on said titanium layer; forming a second layer including aluminum on said titanium compound layer; and forming a compound layer consisting essentially of titanium and aluminum at the interface between the titanium layer and the first interconnection layer.
Claim 2
Independent Claim
142 words
A method for manufacturing an interconnection structure of a semiconductor integrated circuit device comprising the steps of: forming a first interconnection layer including aluminum on a main surface of a semiconductor substrate; forming an insulating layer on said first interconnection layer; selectively removing said insulating layer to form a through hole for exposing a surface of said first interconnection layer; forming a titanium layer on said insulting layer, said titanium layer being in contact with the surface of said first interconnection layer through said through hole to form an interface between said titanium layer and said first interconnection layer; forming a titanium compound layer on said titanium layer; forming a second layer including aluminum on said titanium compound layer; and forming a compound layer consisting essentially of titanium and aluminum at the interface between the titanium layer and the first interconnection layer.
Claim 3
Dependent Claim
28 words
A manufacturing method according to claim 1, wherein said step of selectively removing includes sputter etching on the exposed surface of said first interconnection layer by argon ions.
Claim 4
Dependent Claim
30 words
A manufacturing method according to claim 2, wherein said compound layer is formed by heating the interconnection structure to cause reaction of said first interconnection layer and said titanium layer.
Claim 5
Dependent Claim
23 words
A manufacturing method according to claim 3, wherein said step of heating includes heating for 15-60 minutes at a temperature of 300°-450° C.
Claim 6
Independent Claim
152 words
A method for manufacturing an interconnection structure of a semiconductor integrated circuit device comprising the steps of: forming a first interconnection layer including aluminum on a main surface of a semiconductor substrate; forming an insulating layer on said first interconnection layer; selectively removing said insulating layer to form a through hole for exposing a surface of said first interconnection layer; forming a refractory metal layer on said insulating layer, said refractory metal layer being in contact with the surface of said first interconnecting layer through said through hole to form an interface between said refractory metal layer and said first interconnection layer; forming a refractory metal compound layer on said refractory metal layer; forming a second interconnection layer including aluminum on said refractory metal compound layer; and forming a compound layer consisting essentially of said refractory metal and aluminum at the interface between the refractory metal layer and the first interconnection layer.
Claim 7
Independent Claim
152 words
A method for manufacturing an interconnection structure of a semiconductor integrated circuit device comprising the steps of: forming a first interconnection layer including aluminum on a main surface of a semiconductor substrate; forming an insulating layer on said first interconnection layer; selectively removing said insulating layer to form a through hole for exposing a surface of said first interconnection layer; forming a refractory metal layer on said insulating layer, said refractory metal layer being in contact with the surface of said first interconnecting layer through said through hole to form an interface between said refractory metal layer and said first interconnection layer; forming a refractory metal compound layer on said refractory metal layer; forming a second interconnection layer including aluminum on said refractory metal compound layer; and forming a compound layer consisting essentially of said refractory metal and aluminum at the interface between the refractory metal layer and the first interconnection layer.
Claim 8
Dependent Claim
25 words
A manufacturing method according to claim 5, wherein said refractory metal includes a metal selected from the group consisting of titanium, tantalum tungsten and molybdenum.
Claim 9
Dependent Claim
28 words
A manufacturing method according to claim 5, wherein said step of selectively removing includes sputter etching on the exposed surface of said first interconnection layer by argon ions.
Claim 10
Dependent Claim
31 words
A manufacturing method according to claim 7, wherein said compound layer is formed by heating the interconnection structure to cause reaction of said first interconnection layer and said refractory metal layer.
Claim 11
Dependent Claim
23 words
A manufacturing method according to claim 8, wherein said steps of heating includes heating for 15-60 minutes at a temperature of 300°-450° C.
References Cited (Backward Citations)
US4410622A
Cited
JPS57208161A
Cited
JPS6190445A
Cited
US4710398A
Cited
US4751198A
Cited
JPS6351630A
Cited
US4985750A
Cited
US4924295A
Cited
US4910580A
Cited
US4987562A
Cited
US4937652A
Cited
US4962414A
Cited
US5070392A
Cited
US5008730A
Cited
US5049975A
Cited
US4917759A
Cited
US5081064A
Cited
US5051812A
Cited
US5313101A
Cited
US5231053A
Cited
US5312775A
Cited
US5308793A
Cited
US5200359A
Cited
US5358901A
Cited
US5356836A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-29 | 1999-07-31 | 2000-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-29 | 2003-07-31 | 2004-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-29 | 2007-07-31 | 2008-01-30 | $7700.00 | Window Closed / Lapsed |