US5313101A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Interconnection structure of semiconductor integrated circuit device
Assignee: Mitsubishi Electric Corp
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Filing: 1993-08-10
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Granted: 1994-05-17
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Expires: 2013-08-10
Abstract
Abstract A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through a connection hole. A first aluminum interconnection layer is formed on a main surface of said semiconductor substrate. An insulating layer is formed on the first aluminum interconnection layer and has a through hole extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer. An electrical contact resistance between the first and second aluminum interconnection layers is stabilized, and resistance against the electron-migration and stress-migration is improved in the interconnection structure.
Inventors
- 👤 Shigeru Harada
- 👤 Junichi Arima
- 👤 Noriaki Fujiki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:44
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/42
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
122 words
An interconnection structure for a semiconductor integrated circuit device comprising: a first interconnection layer including aluminum; an insulating layer formed on said first interconnection layer, said insulating layer having a through hole extending from a surface of said insulating layer to said first aluminum interconnection layer; and a second interconnection layer electrically connected to said first interconnection layer through said through hole; wherein said second interconnection layer includes: a titanium layer formed on said insulating layer and extending through said through hole; an intermetallic compound of titanium and aluminum at a contact interface between said titanium layer and said first interconnection layer; a titanium compound layer formed on said titanium layer; and a layer including aluminum formed on said titanium compound layer.
Claim 2
Dependent Claim
122 words
An interconnection structure for a semiconductor integrated circuit device comprising: a first interconnection layer including aluminum; an insulating layer formed on said first interconnection layer, said insulating layer having a through hole extending from a surface of said insulating layer to said first aluminum interconnection layer; and a second interconnection layer electrically connected to said first interconnection layer through said through hole; wherein said second interconnection layer includes: a titanium layer formed on said insulating layer and extending through said through hole; an intermetallic compound of titanium and aluminum at a contact interface between said titanium layer and said first interconnection layer; a titanium compound layer formed on said titanium layer; and a layer including aluminum formed on said titanium compound layer.
Claim 3
Dependent Claim
28 words
An interconnection structure for a semiconductor integrated circuit device according to claim 1, wherein said titanium layer has a thickness in a range from 50 to 150 Å.
Claim 4
Dependent Claim
21 words
An interconnection structure for a semiconductor integrated circuit device according to claim 1, wherein said titanium compound layer comprises titanium nitride.
Claim 5
Dependent Claim
28 words
An interconnection structure for a semiconductor integrated circuit device according to claim 3, wherein said titanium nitride layer has a specific resistance in a range of 250-400 μΩ·cm.
Claim 6
Dependent Claim
27 words
An interconnection structure for a semiconductor integrated circuit device according to claim 4, wherein said titanium nitride layer has a thickness in a range of 500-1000 Å.
Claim 7
Dependent Claim
20 words
An interconnection structure for a semiconductor integrated circuit device according to claim 1, wherein said first interconnection layer contains silicon.
Claim 8
Dependent Claim
45 words
An interconnection structure for a semiconductor integrated circuit device according to claim 2, further comprising an intermetallic compound layer of titanium and aluminum at a contact interface between said titanium layer and said first aluminum interconnection layer, wherein said first aluminum interconnection layer contains silicon.
Claim 9
Dependent Claim
129 words
An interconnection structure for a semiconductor integrated circuit device comprising: a first interconnection layer including aluminum; an insulating layer formed on said first interconnection layer, said insulating layer having a through hole extending from a surface of said insulating layer to said first aluminum interconnection layer; and a second interconnection layer electrically connected to said first interconnection layer through said through hole; wherein said second interconnection layer includes: a refractory metal layer formed on said insulating layer and extending through said through hole; an intermetallic compound layer of refractory metal and aluminum at a contact interface between said refractory metal layer and said first interconnection layer; a refractory metal compound layer formed on said refractory metal layer; and a layer including aluminum formed on said refractory metal compound layer.
Claim 10
Dependent Claim
129 words
An interconnection structure for a semiconductor integrated circuit device comprising: a first interconnection layer including aluminum; an insulating layer formed on said first interconnection layer, said insulating layer having a through hole extending from a surface of said insulating layer to said first aluminum interconnection layer; and a second interconnection layer electrically connected to said first interconnection layer through said through hole; wherein said second interconnection layer includes: a refractory metal layer formed on said insulating layer and extending through said through hole; an intermetallic compound layer of refractory metal and aluminum at a contact interface between said refractory metal layer and said first interconnection layer; a refractory metal compound layer formed on said refractory metal layer; and a layer including aluminum formed on said refractory metal compound layer.
Claim 11
Dependent Claim
31 words
An interconnection structure for a semiconductor integrated circuit device according to claim 8, wherein said refractory metal includes a metal selected from the group consisting of titanium, tantalum, tungsten and molybdenum.
Claim 12
Dependent Claim
23 words
An interconnection structure for a semiconductor integrated circuit device according to claim 8, wherein said refractory metal compound layer comprises refractory metal nitride.
Claim 13
Dependent Claim
22 words
An interconnection structure for a semiconductor integrated circuit device according to claim 1, wherein said intermetallic compound layer comprises TiAl 3 .
Claim 14
Dependent Claim
22 words
An interconnection structure for a semiconductor integrated circuit device according to claim 8, wherein the intermetallic compound layer comprises TiAl 3 .
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