Semiconductor device

Abstract

Abstract PURPOSE:To prevent the generation of an Al spike, an Si nodule, a stress migration, an electromigration and so on by a method wherein a first layer is formed of a composite layer consisting of a Ti layer, a TiN layer and an Al-Si layer or an Al layer and a second layer and succeeding layers are formed of a composite layer consisting of a Ti layer and an Al-Si layer or an Al layer. CONSTITUTION:An interlayer film 7 is formed and thereafter, contact holes 8a and 8b are formed. After this, an ion-implantation for compensating diffusion is performed to form n<+> regions 3a and 4a. Then, a composite layer consisting of a Ti layer 10, a TiN layer 11 and an Al-Si layer 12 (or an Al layer) is formed on the whole surface by deposition. After this, a patterning is performed on the composite layer to form a first wiring layer 9. Then, after an interlayer film 13 is formed, contact holes 14a and 14b are formed. After this, a composite layer consisting of a Ti layer 15 and an Al-Si layer 16 (or an Al layer) is formed on the whole surface by deposition. After this, a patterning is performed on this composite layer to form a second wiring layer 17.

Inventors

• 👤 Kazuyoshi Kobayashi
• 👤 Yukiyasu Sugano
• 👤 Takashi Shimada

Bibliographic Details