Process of curing hydrogen silsesquioxane coating to form silicon oxide layer

Claim 2

A process for converting a hydrogen silsesquioxane coating on a substrate to SiO 2 which comprises: a) coating a substrate with a hydrogen silsesquioxane coating, and then, after drying said coated substrate; b) inserting said coated substrate into a furnace preheated to a temperature of at least about 300° C. prior to said inserting of said coated substrate therein; c) igniting a plasma in said furnace immediately after said insertion of said coated substrate therein; d) further heating said coated substrate in said furnace in the presence of said plasma to a curing temperature of at least about 400° C.; e) maintaining the coated substrate at said curing temperature until substantially all of the hydrogen silsesquioxane coating material has been converted to SiO 2 while still maintaining said plasma in said furnace; f) then extinguishing said plasma; and g) subsequently removing said SiO 2 -coated substrate from said furnace.

Claim 3

The process of claim 1 wherein said furnace is preheated to a temperature of at least about 400° C., prior to insertion of said coated substrate into said furnace.

Claim 4

The process of claim 1 wherein said furnace temperature is raised, after insertion of said coated substrate therein, to thereby heat said coated substrate to at least about 400° C. and then maintaining said coated substrate in said furnace for an initial holding period of at least about 5 minutes before raising said furnace to a higher curing temperature.

Claim 5

The process of claim 3 wherein said coated substrate is maintained in said preheated furnace at said at least about 400° C. for an initial holding period of at least about 20 minutes before raising said furnace to a higher curing temperature.

Claim 6

The process of claim 3 wherein said furnace temperature is raised to a higher curing temperature of at least about 600° C. after said initial holding period.

Claim 7

The process of claim 5 wherein said furnace temperature is raised to said curing temperature of at least about 600° C. over a period of at least about 5 minutes.

Claim 8

The process of claim 6 wherein said furnace is maintained at said curing temperature of at least about 600° C. for a period of at least about 5 minutes, after which said plasma is extinguished and said furnace is allowed to cool back at least to said temperature to which said furnace was preheated.

Claim 9

The process of claim 6 wherein said furnace is maintained at said curing temperature of at least about 600° C. for a period of at least about 10 minutes, after which said plasma is extinguished and said furnace is allowed to cool back at least to said temperature to which said furnace was preheated.

Claim 10

The process of claim 6 wherein said furnace is maintained at said curing temperature of at least about 600° C. for a period of at least about 20 minutes, after which said plasma is extinguished and said furnace is allowed to cool back to at least said temperature to which said furnace was preheated.

Claim 11

The process of claim 3 wherein said furnace and said coated substrate therein are subsequently heated to a curing temperature of at least about 700° C. after said initial holding period.

Claim 12

The process of claim 1 wherein the temperature of said furnace, after insertion of said coated substrate therein, is maintained at a curing temperature of about 400° C. for a period of at least about 20 minutes.

Claim 13

A process for converting substantially all of a hydrogen silsesquioxane coating on a substrate to SiO 2 which comprises: a) coating a substrate with a hydrogen silsesquioxane coating, and then, after drying said coated substrate; b) inserting said coated substrate into a furnace preheated to a temperature of at least about 300° C.; c) igniting a plasma in said furnace immediately after inserting said coated substrate therein; d) maintaining said coated substrate in said furnace at said preheated temperature and in the presence of said plasma for a period of at least about 5 minutes before raising the temperature in said furnace; e) then raising the temperature of the furnace to a curing temperature of at least about 600° over a period of at least about 5 minutes; f) maintaining the coated substrate at said curing temperature for a period of at least about 20 minutes while maintaining said plasma in said furnace to permit substantially all of said hydrogen silsesquioxane coating material to convert to SiO 2 ; g) then extinguishing said plasma and cooling said furnace back to said preheated temperature; and h) subsequently removing said SiO 2 -coated substrate from said furnace.

Claim 14

A process for converting substantially all of a hydrogen silsesquioxane coating on a substrate to SiO 2 which comprises: a) coating a substrate with a hydrogen silsesquioxane coating, and then, after drying said coated substrate; b) inserting said coated substrate into a furnace preheated to a temperature of at least about 300° C.; c) igniting a plasma in said furnace immediately after inserting said coated substrate therein; d) maintaining said coated substrate in said furnace at said preheated temperature and in the presence of said plasma for a period of at least about 5 minutes before raising the temperature in said furnace; e) then raising the temperature of the furnace to a curing temperature of at least about 600° over a period of at least about 5 minutes; f) maintaining the coated substrate at said curing temperature for a period of at least about 20 minutes while maintaining said plasma in said furnace to permit substantially all of said hydrogen silsesquioxane coating material to convert to SiO 2 ; g) then extinguishing said plasma and cooling said furnace back to said preheated temperature; and h) subsequently removing said SiO 2 -coated substrate from said furnace.

Claim 15

The process of claim 12 wherein said furnace is preheated to a temperature of at least about 400° C., prior to insertion of said coated substrate into said furnace.

Claim 16

The process of claim 12 wherein said furnace temperature is raised to a curing temperature of at least about 700° C.

Claim 17

The process of claim 12 wherein said SiO 2 -coated substrate is allowed to cool in said furnace for a period of at least about 20 minutes before said coated substrate is removed from said furnace.

Claim 18

The process of claim 12 wherein said plasma is maintained at a power level ranging from about 25 watts to about 2000 watts.

Claim 19

The process of claim 12 wherein said plasma power is maintained at a duty cycle ranging from about 40% to about 90%.

Claim 20

The process of claim 12 wherein said furnace is maintained at a pressure not exceeding 1 Torr.

Claim 21

A process for converting substantially all of a hydrogen silsesquioxane coating on a substrate to SiO 2 which comprises: a) coating a substrate with a hydrogen silsesquioxane coating, and then, after drying said coated substrate; b) inserting said coated substrate into a furnace preheated to a temperature of at least about 400° C. and maintained at a pressure not exceeding 1 Torr; c) igniting a plasma in said chamber immediately after inserting said coated substrate therein, said plasma having a power ranging from about 25 watts to about 2000 watts and a duty cycle ranging from about 40% to about 90%; d) preheating said coated substrate for a period of at least about 10 minutes in said preheated furnace in the presence of said plasma; e) then raising the temperature of said furnace to a curing temperature of at least about 700° over a period of at least about 5 minutes; f) maintaining said coated substrate at said curing temperature for a period of at least about 20 minutes to convert substantially all of said hydrogen silsesquioxane coating material to SiO 2 while still maintaining said plasma in said furnace; g) then extinguishing said plasma and cooling said furnace back to at least said preheated temperature; h) maintaining said coated substrate in said furnace for a period of at least about 10 minutes after said cooling step commences; and i) subsequently removing said SiO 2 -coated substrate from said furnace.

Claim 22

A process for converting substantially all of a hydrogen silsesquioxane coating on a substrate to SiO 2 which comprises: a) coating a substrate with a hydrogen silsesquioxane coating, and then, after drying said coated substrate; b) inserting said coated substrate into a furnace preheated to a temperature of at least about 400° C. and maintained at a pressure not exceeding 1 Torr; c) igniting a plasma in said chamber immediately after inserting said coated substrate therein, said plasma having a power ranging from about 25 watts to about 2000 watts and a duty cycle ranging from about 40% to about 90%; d) preheating said coated substrate for a period of at least about 10 minutes in said preheated furnace in the presence of said plasma; e) then raising the temperature of said furnace to a curing temperature of at least about 700° over a period of at least about 5 minutes; f) maintaining said coated substrate at said curing temperature for a period of at least about 20 minutes to convert substantially all of said hydrogen silsesquioxane coating material to SiO 2 while still maintaining said plasma in said furnace; g) then extinguishing said plasma and cooling said furnace back to at least said preheated temperature; h) maintaining said coated substrate in said furnace for a period of at least about 10 minutes after said cooling step commences; and i) subsequently removing said SiO 2 -coated substrate from said furnace.