US5342792A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor memory element
Assignee: Canon Inc
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Filing: 1992-08-31
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Granted: 1994-08-30
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Expires: 2012-08-31
Abstract
Abstract A method of manufacturing a semiconductor memory element, comprising the steps of: forming a trench in a semiconductor substrate; forming an oxide film in a bottom and a side wall of the trench and a surface of the substrate; forming a selective deposition film on only the oxide film at the bottom of the trench, the selective deposition film being a member selected from the group consisting of a silicon film and a nitrogen-containing silicon film; and selectively growing polysilicon on only the selective deposition film, thereby forming a trench capacitor.
Inventors
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/665; H10P14/24; H10P14/27; H10P14/271; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/40; H10P14/416
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
97 words
A method of manufacturing a semiconductor memory element, comprising the steps of: forming a trench structure in a semiconductor substrate; forming a continuous oxide film in a bottom and a side wall of the trench and a surface of the substrate; forming a selective deposition film on only the oxide film at the bottom of the trench, wherein the selective deposition film comprises a surface denatured area obtained by implanting silicon ions in a surface of the oxide film at the bottom and selectively growing polysilicon on only the selective deposition film, thereby forming a trench capacitor.
Claim 2
Independent Claim
97 words
A method of manufacturing a semiconductor memory element, comprising the steps of: forming a trench structure in a semiconductor substrate; forming a continuous oxide film in a bottom and a side wall of the trench and a surface of the substrate; forming a selective deposition film on only the oxide film at the bottom of the trench, wherein the selective deposition film comprises a surface denatured area obtained by implanting silicon ions in a surface of the oxide film at the bottom and selectively growing polysilicon on only the selective deposition film, thereby forming a trench capacitor.
Claim 3
Independent Claim
97 words
A method of manufacturing a semiconductor memory element, comprising the steps of: forming a trench structure in a semiconductor substrate; forming a continuous oxide film in a bottom and a side wall of the trench and a surface of the substrate; forming a selective deposition film on only the oxide film at the bottom of the trench, wherein the selective deposition film comprises a surface denatured area obtained by implanting nitrogen ions in a surface of the oxide film at the bottom and selectively growing polysilicon on only the selective deposition film, thereby forming a trench capacitor.
Claim 4
Independent Claim
97 words
A method of manufacturing a semiconductor memory element, comprising the steps of: forming a trench structure in a semiconductor substrate; forming a continuous oxide film in a bottom and a side wall of the trench and a surface of the substrate; forming a selective deposition film on only the oxide film at the bottom of the trench, wherein the selective deposition film comprises a surface denatured area obtained by implanting nitrogen ions in a surface of the oxide film at the bottom and selectively growing polysilicon on only the selective deposition film, thereby forming a trench capacitor.
Claim 5
Dependent Claim
18 words
A method according to claim 1 or 2, wherein the selective deposition film has a tapered end portion.
Claim 6
Dependent Claim
20 words
A method according to claim 1 or 2, wherein the trench structure has a depth greater than a width thereof.
Claim 7
Dependent Claim
15 words
A method according to claim 1 or 2, wherein said semiconductor substrate comprises a silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-29 | 1998-02-28 | 1998-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-29 | 2002-02-28 | 2002-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-29 | 2006-02-28 | 2006-08-30 | $7700.00 | Window Closed / Lapsed |