Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To increase the diameters of the crystalline grains by covering an insulating film having unevenness on a substrate with a semiconductor film and ion injecting before or after annealing the film with a laser. CONSTITUTION:An oxidized Si 2 is covered on a substrate 1 formed of Si, or glass, fine uneven structure is formed by photolithographic technique, a polycrystalline Si 3 is covered, ions 4 of B, or P are implanted, and the film is locally or entirely annealed with a laser light 5, thereby increasing the crystalline grain diameter. In this manner, the characteristics of a semiconductor element can be enhanced, and the resistance of the polycrystalline Si can be lowered.

Inventors

• 👤 Keiji Kobayashi

Bibliographic Details