Total dielectric isolation for integrated circuits

Claim 2

Method for fabricating a total dielectrically isolated integrated circuit in a monocrystalline silicon body comprising: providing in a monocrystalline silicon body having a monocrystalline silicon region on one major surface of said body dielectrically isolated at said surface from other such regions by two parallel strips of dielectric material; said silicon body having an N+ sub-region spaced from said major surface of said body and extending parallel to said major surface at least substantially across said entire body and below said dielectric strips; anisotropically etching parallel pairs of trenches within said monocrystalline region between said strips of dielectric material and through said N+ sub-region; the etch rate of said anisotropically etching is adjusted to cause a preferential etching of said N+ sub-region so that a portion of the said N+ region is removed and monocrystalline silicon remains above this removed portion; the spacing of said trenches is chosen such that said preferential etching of said N+ sub-region from each trench closely approaches the other of the pair; thermally oxidizing the exposed silicon surfaces of said trenches until the said N+ sub-region between said trenches is totally oxidized to silicon dioxide; filling said trenches with dielectric material to produce said total dielectrically isolated silicon region; forming semiconductor devices in said total dielectrically isolated silicon region; and contacting the elements of said devices in said region and connecting them to similar devices in said other such region to form said integrated circuit.

Claim 3

The method of claim 1 wherein said strips of dielectric material is silicon dioxide.

Claim 4

The method of claim 1 wherein said N+ sub-region is doped with arsenic and is between about 1 to 4 micrometers in thickness.

Claim 5

The method of claim 1 wherein the portion of said silicon body above said N+ region is an N- epitaxial silicon layer.

Claim 6

The method of claim 4 wherein said epitaxial layer has a thickness between about 1 to 3 micrometers.

Claim 7

The method of claim 1 wherein the said anisotropically etching uses reactive ion etching ambient of CCl 2 F 2 and oxygen.

Claim 8

The method of claim 1 wherein the said anisotropically etching uses CCl 2 F 2 and O 2 .

Claim 9

The method of claim 1 wherein said spacing between the nearest edges of said pair of trenches is between about 1 to 4 micrometers.

Claim 10

The method of claim 1 wherein said N+ region removed with said monocrystalline silicon remains above is between about 0.5 to 2 micrometers.

Claim 11

The method of claim 1 wherein said filling said trenches includes depositing nitride on the exposed surfaces and then blanket depositing polycrystalline silicon to completely fill said trenches.

Claim 12

The method of claim 10 wherein the surface of said silicon body is planarized by removing said blanket polycrystalline silicon from said surface and above said trenches by reactive ion etching.

Claim 13

The method of claim 1 wherein said semiconductor devices are bipolar transistors.

Claim 14

The method of claim 1 wherein said semiconductor devices are field effect transistors.

Claim 15

Method for fabricating a total dielectrically isolated integrated circuit in a monocrystalline silicon body comprising: providing in a monocrystalline silicon body having a monocrystalline silicon region on one major surface of said body dielectrically isolated at said surface from other such regions by two parallel strips of dielectric material; said silicon body having an N+ sub-region spaced from said major surface of said body and extending parallel to said major surface at least substantially across said entire body and below said dielectric strips; anisotropically etching parallel pairs of trenches within said monocrystalline region between said strips of dielectric material to a point above said N+ sub-region; thermally oxidizing the exposed silicon surfaces of said trenches to form a silicon dioxide layer thereon; depositing a silicon nitride layer over said silicon dioxide layer in said trenches; removing said silicon nitride and silicon dioxide layers from the bottoms of said trenches; anisotropically etching said trenches through said N+ sub-region; the etch rate of said anisotropically etching is adjusted to cause a preferential etching of said N+ sub-region so that a portion of the said N+ region is removed and monocrystalline silicon remains above this removed portion; the spacing of said trenches is chosen such that said preferential etching of said N+ sub-region from each trench closely approaches the other of the pair; thermally oxidizing the exposed silicon surfaces of said trenches until the said N+ sub-region between said trenches is totally oxidized to silicon dioxide; filling said trenches with dielectric material to produce said total dielectrically isolated silicon region; forming semiconductor devices in said total dielectrically isolated silicon region; and contacting the elements of said devices in said region and connecting them to similar devices in said other such region to form said integrated circuit.

Claim 16

Method for fabricating a total dielectrically isolated integrated circuit in a monocrystalline silicon body comprising: providing in a monocrystalline silicon body having a monocrystalline silicon region on one major surface of said body dielectrically isolated at said surface from other such regions by two parallel strips of dielectric material; said silicon body having an N+ sub-region spaced from said major surface of said body and extending parallel to said major surface at least substantially across said entire body and below said dielectric strips; anisotropically etching parallel pairs of trenches within said monocrystalline region between said strips of dielectric material to a point above said N+ sub-region; thermally oxidizing the exposed silicon surfaces of said trenches to form a silicon dioxide layer thereon; depositing a silicon nitride layer over said silicon dioxide layer in said trenches; removing said silicon nitride and silicon dioxide layers from the bottoms of said trenches; anisotropically etching said trenches through said N+ sub-region; the etch rate of said anisotropically etching is adjusted to cause a preferential etching of said N+ sub-region so that a portion of the said N+ region is removed and monocrystalline silicon remains above this removed portion; the spacing of said trenches is chosen such that said preferential etching of said N+ sub-region from each trench closely approaches the other of the pair; thermally oxidizing the exposed silicon surfaces of said trenches until the said N+ sub-region between said trenches is totally oxidized to silicon dioxide; filling said trenches with dielectric material to produce said total dielectrically isolated silicon region; forming semiconductor devices in said total dielectrically isolated silicon region; and contacting the elements of said devices in said region and connecting them to similar devices in said other such region to form said integrated circuit.

Claim 17

The method of claim 14 wherein said strips of dielectric material is silicon dioxide and the said N+ sub-region is doped with arsenic.

Claim 18

The method of claim 14 wherein the portion of said silicon body above said N+ region is an N- epitaxial silicon layer and said epitaxial layer has a thickness between about 1 to 3 micrometers.

Claim 19

The method of claim 14 wherein the said anisotropically etching uses reactive ion etching ambient of CCl 2 F 2 and oxygen.

Claim 20

The method of claim 14 wherein said N+ region removed with said monocrystalline silicon remains above is between about 0.5 to 2 micrometers.

Claim 21

The method of claim 14 wherein said filling said trenches includes depositing a layer of silicon nitride on the exposed surfaces and then blanket depositing polycrystalline silicon to completely fill said trenches.

Claim 22

The method of claim 19 wherein the surface of said silicon body is planarized by removing said blanket polycrystaline silicon from said surface and above said trenches by reactive ion etching.

Claim 23

The method of claim 14 wherein said semiconductor devices are bipolar transistors.

Claim 24

The method of claim 14 wherein said semiconductor devices are field effect transistors.