Patent US5312765A successfully refreshed from Google Patents.
US5312765A
Expired / Lapsed
US
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Method of fabricating three dimensional gallium arsenide microelectronic device
Assignee: Raytheon Co
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Filing: 1993-05-11
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Granted: 1994-05-17
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Expires: 2013-05-11
Abstract
Abstract Optoelectronic devices (16) are formed on a first surface (12) of a gallium arsenide substrate (10) using selective ion implantation. Signal processing devices may be formed on a second, opposite surface (14) of the substrate (10) using selective ion implantation (38) and/or selective epitaxy (22,24),(40). Vertical interconnects (34,46) are formed between the first and second surfaces (12,14). Alternatively, a gallium arsenide buffer layer (54) may be grown on the first surface (12) of the substrate (10), and the signal processing devices formed on the buffer layer (54) using selective ion implantation (58,60,62) and/or selective epitaxy (76,78,80,82). Dielectric (50) and/or conductive metal (52) layers may be formed on selected areas of the first surface (12), and the buffer layer (54) grown from exposed areas (56) of the first surface (12) over the dielectric (50) and/or metal (52) layers using lateral epitaxial overgrowth organometallic chemical vapor deposition. The signal processing devices may be formed in areas of the buffer layer (54) which overlie the exposed areas (56) of the substrate (12), and/or over the dielectric (50) and/or metal (52) layers. The present method enables metal-semiconductor field effect transistors (MESFET), high electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT) to be monolithically integrated in a vertical fashion for close packing density.
Inventors
- 👤 Hilda Kanber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:35
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10W; H10W20/00; H10W20/20; H10W20/211; H10W20/212; H10W20/2125; H10D84/0107; Y; Y10; Y10S; Y10S148/00; Y10S148/164; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
130 words
A method of fabricating a three-dimensional microelectronic device structure, comprising the steps of: (a) providing a semi-insulating substrate having first and second opposite surfaces, wherein the semi-insulating substrate comprises a III-V material; (b) forming a buried first microelectronic device in said first surface, wherein the first microelectronic device comprises a III-V material and includes active device layers formed using selective ion implantation; and (c) forming a second microelectronic device on the substrate, the second device being spaced from the first device in a direction perpendicular to said first surface, wherein the second microelectronic device comprises a III-V material; and (d) forming a vertical interconnect hole through the substrate from the first microelectronic device to the second microelectronic device to electrooptically couple the first microelectronic device to the second microelectronic device.
Claim 2
Independent Claim
130 words
A method of fabricating a three-dimensional microelectronic device structure, comprising the steps of: (a) providing a semi-insulating substrate having first and second opposite surfaces, wherein the semi-insulating substrate comprises a III-V material; (b) forming a buried first microelectronic device in said first surface, wherein the first microelectronic device comprises a III-V material and includes active device layers formed using selective ion implantation; and (c) forming a second microelectronic device on the substrate, the second device being spaced from the first device in a direction perpendicular to said first surface, wherein the second microelectronic device comprises a III-V material; and (d) forming a vertical interconnect hole through the substrate from the first microelectronic device to the second microelectronic device to electrooptically couple the first microelectronic device to the second microelectronic device.
Claim 3
Dependent Claim
42 words
A method as in claim 1, in which: step (b) comprises forming the first device as including an optoelectronic device; and step (c) comprises forming the second device as including a signal processing device for processing signals associated with the optoelectronic device.
Claim 4
Dependent Claim
19 words
A method as in claim 1, in which step (c) comprises forming the second device on said second surface.
Claim 5
Dependent Claim
13 words
A method as in claim 3, in which step (c) comprises epitaxial deposition.
Claim 6
Dependent Claim
61 words
A method as in claim 3, in which step (c) comprises the substeps of: (e) depositing a first epitaxial layer structure on said second surface; (f) depositing a second epitaxial layer structure on the first epitaxial layer structure; and (g) removing the second epitaxial layer structure from the first epitaxial layer structure over an area of the first epitaxial layer structure.
Claim 7
Dependent Claim
12 words
A method as in claim 5, in which step (g) comprises etching.
Claim 8
Dependent Claim
71 words
A method as in claim 5, in which: step (g) comprises etching; and the method further comprises the steps of: (h) after performing step (e) and before performing step (f), forming an etch stop layer of a material which resists etching in step (g) on the first epitaxial layer structure; and (i) after performing step (g), removing the etch stop layer from the first epitaxial layer structure over said area thereof.
Claim 9
Dependent Claim
69 words
A method as in claim 3, in which: step (c) comprises epitaxial deposition; and the method further comprises the steps of: after performing step (b) and before performing step (c), forming an etch stop layer of a material which resists reactive ion etching on said second surface; and (f) wherein said vertical interconnect layer is formed from the first surface to the etch stop layer using reactive ion etching.
Claim 10
Dependent Claim
14 words
A method as in claim 3, in which step (c) comprises selective ion implantation.
Claim 11
Dependent Claim
26 words
A method as in claim 9, further comprising the step of: (e) after performing steps (b) and (c), simultaneously annealing said ion-implanted first and second device.
Claim 12
Dependent Claim
29 words
A method as in claim 9, further comprising the step of: (e) after performing step (c), forming a third microelectronic device on said second surface using selective epitaxial deposition.
Claim 13
Dependent Claim
19 words
A method as in claim 1, in which step (c) comprises forming the second device over said first surface.
Claim 14
Dependent Claim
34 words
A method as in claim 12, in which step (c) comprises the substeps of: (e) forming a semi-insulating buffer layer on said first surface; and (f) forming the second device on the buffer layer.
Claim 15
Dependent Claim
14 words
A method as in claim 13, in which step (f) comprises selective ion implantation.
Claim 16
Dependent Claim
26 words
A method as in claim 14, further comprising the step of: (g) after performing steps (b) and (c), simultaneously annealing said ion-implanted first and second device.
Claim 17
Dependent Claim
13 words
A method as in claim 13, in which step (f) comprises epitaxial deposition.
Claim 18
Dependent Claim
54 words
A method as in claim 13, in which step (e) comprises the substeps of: (g) forming a dielectric layer on an area of said first surface; and (h) growing the buffer layer from an exposed area of said first surface over the dielectric layer using selective area epitaxy followed by lateral epitaxial overgrowth deposition.
Claim 19
Dependent Claim
15 words
A method as in claim 17, in which step (h) comprises organometallic chemical vapor deposition.
Claim 20
Dependent Claim
27 words
A method as in claim 17, in which step (f) comprises forming the second device on an area of the buffer layer which overlies the dielectric layer.
Claim 21
Dependent Claim
31 words
A method as in claim 17, in which step (f) comprises forming the second device on an area of the buffer layer which overlies said exposed area of said first surface.
Claim 22
Dependent Claim
50 words
A method as in claim 13, in which step (e) comprises the substeps of: (g) forming an electrically conductive layer on an area of said first surface; and (h) growing the buffer layer from an exposed area of said first surface over the conductive layer using lateral epitaxial overgrowth deposition.
Claim 23
Dependent Claim
23 words
A method as in claim 13, in which step (e) comprises forming the buffer layer of substantially the same material as the substrate.
Claim 24
Dependent Claim
30 words
A method as in claim 13, in which: step (a) comprises providing the substrate as including gallium arsenide; and step (e) comprises forming the buffer layer as including gallium arsenide.
Claim 25
Dependent Claim
18 words
A method as in claim 1, in which step (a) comprises providing the substrate as comprising gallium arsenide.
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