Optoelectronic integrated circuit and manufacture thereof

Abstract

Abstract PURPOSE:To provide both semiconductor substrate and the first semiconductor layer with a composition displaying the characteristics meeting the requirements of an optical element as well as excellent crystallizability by a method wherein the semiconductor substrate and the first semiconductor layer comprise III-V compound semiconductor crystal to form an optical element using the same while the second semiconductor layer comprises an Si polycrystalline thin film to form an electronic element using the same. CONSTITUTION:A semiconductor layer 3 forming a semiconductor laser L is formed on a semiconductor layer 4 as a buffer layer comprising an InP crystal as a P-type III-V compound semiconductor crystal, another semiconductor layer 5 as an InGaAsP base active layer as well as the other semiconductor layer 6 as an InP crystal clad layer. The second semiconductor layer 11 forming a MIS type field effect transistor M comprises an Si polycrystalline thin film; a gate insulating film 15 comprising SiO2 is locally formed on a polycrystalline thin film 12 as if traversing the semiconductor layer 11 and extending over another semiconductor-layer 8R; while a gate electrode 16 is formed on the gate insulating film 15 as if traversing the semiconductor layer 11 through the intermediary of the gate insulating film 15 and extending over the semiconductor layer 8R.

Inventors

• 👤 Tadashi Serikawa
• 👤 正 芹川
• 👤 Takashi Matsuoka
• 👤 隆志 松岡
• 👤 Hidenao Tanaka
• 👤 秀尚 田中

Bibliographic Details