US5283087A — Plasma processing method and apparatus

Claim 1

Independent Claim 90 words

A plasma etching method comprising: disposing at least one substrate having a film to be etched in a reaction space; supplying an etchant gas into said reaction space wherein said reaction space is defined between a pair of electrodes; exciting said etchant gas to a plasma by applying an electric power to said pair of electrodes; and etching at least a part of said film; wherein a bias voltage is supplied to said substrate during etching by a power source separate from the power source to said pair of electrodes.

Claim 2

Dependent Claim 90 words

A plasma etching method comprising: disposing at least one substrate having a film to be etched in a reaction space; supplying an etchant gas into said reaction space wherein said reaction space is defined between a pair of electrodes; exciting said etchant gas to a plasma by applying an electric power to said pair of electrodes; and etching at least a part of said film; wherein a bias voltage is supplied to said substrate during etching by a power source separate from the power source to said pair of electrodes.

Claim 3

Dependent Claim 13 words

The method according to claim 1 wherein said film is a carbon layer.

Claim 4

Dependent Claim 35 words

The method according to claim 2 wherein said etchant gas is one selected from the group consisting of O 2 , air, NO 2 , NO, N 2 O, a mixture of oxygen and hydrogen.

Claim 5

Dependent Claim 28 words

The method according to claim 1 wherein said substrate is maintained at a temperature -100° to 100° C. during etching of a carbon film with oxygen containing compounds.

Claim 6

Dependent Claim 28 words

The method according to claim 1 wherein a pressure of said etchant gas is 0.01 to 1 Torr during etching of a carbon film with oxygen containing compounds.

Claim 7

Dependent Claim 101 words

A plasma etching method comprising: holding a substrate having a film to be etched in a reaction space by a conductive substrate holder, said reaction space defined between a pair of electrodes in a reaction chamber; supplying an etchant gas into said reaction space; exciting said etchant gas to a plasma by applying an r.f. electric field to said electrodes; and etching at least a part of said film; wherein a bias voltage is applied to said holder by a power source separate from the power source to said pair of electrodes in order to expedite sputtering action of said plasma.

Claim 8

Dependent Claim 101 words

A plasma etching method comprising: holding a substrate having a film to be etched in a reaction space by a conductive substrate holder, said reaction space defined between a pair of electrodes in a reaction chamber; supplying an etchant gas into said reaction space; exciting said etchant gas to a plasma by applying an r.f. electric field to said electrodes; and etching at least a part of said film; wherein a bias voltage is applied to said holder by a power source separate from the power source to said pair of electrodes in order to expedite sputtering action of said plasma.

Claim 9

Dependent Claim 27 words

The method of claim 6 wherein a pressure of said etchant gas is 0.01 to 1 Torr during etching of a carbon film with oxygen containing compounds.

Claim 10

Dependent Claim 27 words

The method of claim 6 wherein a pressure of said etchant gas is 0.01 to 1 Torr during etching of a carbon film with oxygen containing compounds.

Claim 11

Dependent Claim 93 words

A plasma etching method comprising: holding a substrate having a surface to be etched in a reaction space by a conductive substrate holder, said reaction space defined between a pair of electrodes in a reaction chamber; supplying an etchant gas into said reaction space; exciting said etchant gas to a plasma by applying an AC field having a frequency in the range of 1 to 50 MHz to said electrodes; and etching at least a part of said surface; wherein an AC bias voltage is applied to said substrate through said conductive holder.

Claim 12

Dependent Claim 93 words

A plasma etching method comprising: holding a substrate having a surface to be etched in a reaction space by a conductive substrate holder, said reaction space defined between a pair of electrodes in a reaction chamber; supplying an etchant gas into said reaction space; exciting said etchant gas to a plasma by applying an AC field having a frequency in the range of 1 to 50 MHz to said electrodes; and etching at least a part of said surface; wherein an AC bias voltage is applied to said substrate through said conductive holder.

Claim 13

Dependent Claim 20 words

The method of claim 9 wherein said substrate is maintained at a temperature from -100° to 100° C. during etching.

Claim 14

Dependent Claim 17 words

The method of claim 9 wherein a pressure of said etchant gas is 0.01 to 1 Torr.

Claim 15

Independent Claim 101 words

A method of plasma processing comprising the steps of: providing a conductive holder with at least one substrate; disposing said holder with said substrate between a pair of electrodes in a reaction chamber; supplying a reactive gas into said reaction chamber; applying a first AC voltage having a first frequency to said pair of electrodes through a matching transformer in order to excite said reactive gas to a plasma; applying an AC bias voltage having a second frequency less than said first frequency to said holder; performing a plasma processing on a surface of said substrate by virtue of said plasma.

Claim 16

Independent Claim 101 words

A method of plasma processing comprising the steps of: providing a conductive holder with at least one substrate; disposing said holder with said substrate between a pair of electrodes in a reaction chamber; supplying a reactive gas into said reaction chamber; applying a first AC voltage having a first frequency to said pair of electrodes through a matching transformer in order to excite said reactive gas to a plasma; applying an AC bias voltage having a second frequency less than said first frequency to said holder; performing a plasma processing on a surface of said substrate by virtue of said plasma.

Claim 17

Dependent Claim 11 words

The method of claim 12 wherein said electrodes are mesh electrodes.

Claim 18

Dependent Claim 26 words

The method of claim 12 wherein said AC bias voltage is applied between said holder and a midpoint of the secondary coil of said matching transformer.

Claim 19

Dependent Claim 16 words

The method of claim 12 wherein the frequency of said first AC voltage is 1-50 MHz.

Claim 20

Dependent Claim 16 words

The method of claim 12 wherein the frequency of said AC bias voltage is 1-500 kHz.

Claim 21

Dependent Claim 15 words

The method of claim 12 wherein the surface of said substrate is an insulating material.

Claim 22

Dependent Claim 23 words

The method of claim 17 wherein a rear surface of the substrate is provided with a conductive material electrically connected with said holder.

Claim 23

Dependent Claim 29 words

The method of claim 12 wherein said reactive gas is a carbon compound gas and a carbon film is formed on the surface of substrate by said plasma reaction.

Claim 24

Independent Claim 125 words

A method of plasma processing comprising the steps of: providing a conductive holder with at least one substrate, the substrate having an insulating surface on which a plasma processing is performed; disposing said holder with said substrate between a pair of electrodes in a reaction chamber; supplying a reaction gas into said reaction chamber; applying a first AC voltage having a first frequency ranging from 1 mega to 50 mega Hz to said pair of electrodes through a matching transformer in order to excite said reactive gas to a plasma; applying an AC bias voltage having a second frequency ranging from 1 kilo to 500 kilo Hertz to said holder; performing said plasma processing on a surface of said substrate by virtue of said plasma.

Claim 25

Independent Claim 125 words

A method of plasma processing comprising the steps of: providing a conductive holder with at least one substrate, the substrate having an insulating surface on which a plasma processing is performed; disposing said holder with said substrate between a pair of electrodes in a reaction chamber; supplying a reaction gas into said reaction chamber; applying a first AC voltage having a first frequency ranging from 1 mega to 50 mega Hz to said pair of electrodes through a matching transformer in order to excite said reactive gas to a plasma; applying an AC bias voltage having a second frequency ranging from 1 kilo to 500 kilo Hertz to said holder; performing said plasma processing on a surface of said substrate by virtue of said plasma.

Claim 26

Dependent Claim 25 words

The method according to claim 20 wherein said substrate is provided with a conductive material in order that said AC bias voltage is applied therein.

Claim 27

Dependent Claim 28 words

The method according to claim 20 wherein said reactive gas includes at least a carbon compound gas so that a carbonaceous film can be formed on said substrate.

Claim 28

Dependent Claim 14 words

The method according to claim 20 wherein said substrate is a dish or glass.

Claim 29

Dependent Claim 15 words

The method according to claim 20 wherein said insulating surface comprises plastics or organic resin.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1997-01-31	1997-08-02	1998-02-01	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2001-01-31	2001-08-02	2002-02-01	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2005-01-31	2005-08-02	2006-02-01	$7700.00	Window Closed / Lapsed

Plasma processing method and apparatus

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